BFR30LT1, BFR31LT1
JFET Amplifiers
N−Channel
Features
•
Pb−Free Package is Available
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎ Î Î
Î Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î
Î Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î
Î Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎ Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Rating
Symbol
V
DS
Value
25
25
Unit
Vdc
Vdc
Drain −Source Voltage
Gate −Source Voltage
V
GS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING
DIAGRAM
3
1
2
THERMAL CHARACTERISTICS
Characteristic
SOT−23
CASE 318
STYLE 10
1
x
M
MxM
Symbol
P
D
Max
225
1.8
556
Unit
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
mW
mW/°C
°C/W
= 1 or 2
= Date Code
R
qJA
P
D
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
ORDERING INFORMATION
Device
BFR30LT1
BFR30LT1G
BFR31LT1
BFR31LT1G
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
300
2.4
417
mW
mW/°C
°C/W
°C
R
qJA
Junction and Storage Temperature
T
J
, T
stg
−55 to +150
1. Device mounted on FR4 glass epoxy printed circuit board using the
recommended footprint.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
1
February, 2005 − Rev. 4
Publication Order Number:
BFR30LT1/D
BFR30LT1, BFR31LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Voltage
(V
GS
= 10 Vdc, V
DS
= 0)
(I
D
= 0.5 nAdc, V
DS
= 10 Vdc)
(I
D
= 1.0 mAdc, V
DS
= 10 Vdc)
(I
D
= 50
mAdc,
V
DS
= 10 Vdc)
ON CHARACTERISTICS
Zero −Gate −Voltage Drain Current
SMALL−SIGNAL CHARACTERISTICS
Forward Transconductance
(I
D
= 1.0 mAdc, V
DS
= 10 Vdc, f = 1.0 kHz)
(I
D
= 200
mAdc,
V
DS
= 10 Vdc, f = 1.0 kHz)
Output Admittance
(I
D
= 1.0 mAdc, V
DS
= 10 Vdc, f = 1.0 kHz)
(I
D
= 200
mAdc,
V
DS
= 10 Vdc)
Input Capacitance
Reverse Transfer Capacitance
y
fs
BFR30
BFR31
BFR30
BFR31
y
os
BFR30
BFR31
C
iss
C
rss
40
20
−
−
−
−
25
15
5.0
4.0
1.5
1.5
pF
pF
1.0
1.5
0.5
0.75
4.0
4.5
−
−
mmhos
mmhos
(V
DS
= 10 Vdc, V
GS
= 0)
BFR30
BFR31
I
DSS
4.0
1.0
10
5.0
mAdc
BFR30
BFR31
BFR30
BFR31
BFR30
BFR31
I
GSS
V
GS(OFF)
V
GS
−
−
−
−0.7
−
−
−
0.2
5.0
2.5
−3.0
−1.3
−4.0
−2.0
nAdc
Vdc
Vdc
Symbol
Min
Max
Unit
(I
D
= 1.0 mAdc, V
DS
= 10 Vdc, f = 1.0 MHz)
(I
D
= 200
mAdc,
V
DS
= 10 Vdc, f = 1.0 MHz)
(I
D
= 1.0 mAdc, V
DS
= 10 Vdc, f = 1.0 MHz)
(I
D
= 200
mAdc,
V
DS
= 10 Vdc, f = 1.0 MHz)
TYPICAL CHARACTERISTICS
5
V
DS
= 15 V
V
GS
= 0
R
S
= 1 MW
14
12
NF, NOISE FIGURE (dB)
10
8
6
4
2
0
0.01
0.1
1.0
f, FREQUENCY (kHz)
10
100
0
0.001
0.01
0.1
1.0
R
S
, SOURCE RESISTANCE (Megohms)
10
V
DS
= 15 V
V
GS
= 0
f = 1 kHz
NF, NOISE FIGURE (dB)
4
3
2
1
Figure 1. Noise Figure versus Frequency
Figure 2. Noise Figure versus Source
Resistance
http://onsemi.com
2
BFR30LT1, BFR31LT1
TYPICAL CHARACTERISTICS
1.2
1.0
I D , DRAIN CURRENT (mA)
0.8
0.6
0.4
0.2
0
−0.2 V
I D , DRAIN CURRENT (mA)
V
GS(OFF)
^
−1.2 V
1.2
V
GS
= 0 V
1.0
0.8
V
DS
= 15 V
0.6
0.4
0.2
0
−1.2
V
GS(OFF)
^
−1.2 V
−0.4 V
−0.6 V
−0.8 V
−1.0 V
0
5
10
15
20
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
25
−0.8
−0.4
V
GS
, GATE−SOURCE VOLTAGE (VOLTS)
0
Figure 3. Typical Drain Characteristics
Figure 4. Common Source Transfer
Characteristics
5
5
V
GS
= 0 V
I D , DRAIN CURRENT (mA)
I D , DRAIN CURRENT (mA)
4
V
GS(OFF)
^
−3.5 V
3
−1 V
V
GS(OFF)
^
−3.5 V
4
3
V
DS
= 15 V
2
2
−2 V
−3 V
0
0
5
10
15
20
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
25
1
1
0
−5
−3
−2
−1
−4
V
GS
, GATE−SOURCE VOLTAGE (VOLTS)
0
Figure 5. Typical Drain Characteristics
Figure 6. Common Source Transfer
Characteristics
10
V
GS(OFF)
^
−5.8 V
10
V
GS
= 0 V
I D , DRAIN CURRENT (mA)
I D , DRAIN CURRENT (mA)
8
V
GS(OFF)
^
−5.8 V
−1 V
6
−2 V
4
−3 V
2
0
0
5
10
15
20
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
25
−4 V
−5 V
8
6
V
DS
= 15 V
4
2
0
−7
−6
−5
−4
−3
−2
−1
V
GS
, GATE − SOURCE VOLTAGE (VOLTS)
0
Figure 7. Typical Drain Characteristics
Figure 8. Common Source Transfer
Characteristics
Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%).
Under dc conditions, self heating in higher I
DSS
units reduces I
DSS
.
http://onsemi.com
3
BFR30LT1, BFR31LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
A
L
3
1
2
B S
V
G
C
D
H
K
J
DIM
A
B
C
D
G
H
J
K
L
S
V
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone:
480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax:
480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Japan:
ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone:
81−3−5773−3850
ON Semiconductor Website:
http://onsemi.com
Order Literature:
http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
http://onsemi.com
4
BFR30LT1/D
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
