25AA1024
1 Mbit SPI Bus Serial EEPROM
Device Selection Table
Part Number
25AA1024
V
CC
Range
1.8-5.5V
Page Size
256 Byte
Temp. Ranges
I
Packages
P, SM, MF
Features
• 20 MHz Maximum Clock Speed
• Byte and Page-level Write Operations:
- 256 byte page
- 6 ms maximum write cycle time
- No page or sector erase required
• Low-Power CMOS Technology:
- Maximum Write current: 7 mA at 5.5V
- Maximum Read current: 10 mA at 5.5V,
20 MHz
- Standby current: 1 µA at 2.5V, 85°C
(Deep Power-down)
• Electronic Signature for Device ID
• Self-Timed Erase and Write Cycles:
- Page Erase (6 ms maximum)
- Sector Erase (10 ms maximum)
- Chip Erase (10 ms maximum)
• Sector Write Protection (32K byte/sector):
- Protect none, 1/4, 1/2 or all of array
• Built-in Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• High Reliability:
- Endurance: 1M erase/write cycles
- Data Retention: >200 years
- ESD Protection: 4000V
• Temperature Ranges Supported:
- Industrial (I):-40°C to +85°C
• RoHS Compliant
Description
The Microchip Technology Inc. 25AA1024 is a
1024 Kbit serial EEPROM memory with byte-level and
page-level serial EEPROM functions. It also features
Page, Sector and Chip erase functions typically
associated with Flash-based products. These functions
are not required for byte or page write operations. The
memory is accessed via a simple Serial Peripheral
Interface (SPI) compatible serial bus. The bus signals
required are a clock input (SCK) plus separate data in
(SI) and data out (SO) lines. Access to the device is
controlled by a Chip Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused,
transitions on its inputs will be ignored, with the
exception of Chip Select, allowing the host to service
higher priority interrupts.
The 25AA1024 is available in standard packages
including 8-lead PDIP and SOIJ, and advanced 8-lead
DFN package. All devices are RoHS compliant.
Package Types (not to scale)
DFN
25AA1024
CS 1
SO 2
WP 3
V
SS
4
(MF)
8
7
6
5
V
CC
HOLD
SCK
SI
PDIP/SOIJ
(P, SM)
25AA1024
CS
1
SO
2
WP
3
V
SS
4
8
7
6
5
V
CC
HOLD
SCK
SI
Pin Function Table
Name
CS
SO
WP
V
SS
SI
SCK
HOLD
V
CC
Function
Chip Select Input
Serial Data Output
Write-Protect
Ground
Serial Data Input
Serial Clock Input
Hold Input
Supply Voltage
2007-2015 Microchip Technology Inc.
DS20001836J-page 1
25AA1024
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V
SS
......................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
†
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I)*:
T
A
= 0°C to +85°C
Industrial (I):
T
A
= -40°C to +85°C
* Limited industrial temperature range.
Min.
0.7 V
CC
-0.3
-0.3
—
—
V
CC
-0.2
—
—
—
Max.
V
CC
+1
0.3 V
CC
0.2 V
CC
0.4
0.2
—
±1
±1
7
Units
V
V
V
V
V
V
µA
µA
pF
V
CC
≥
2.7V
V
CC
< 2.7V
I
OL
= 2.1 mA
I
OL
= 1.0 mA, V
CC
< 2.5V
I
OH
= -400 µA
CS = V
CC
, V
IN
= V
SS
or V
CC
CS = V
CC
, V
OUT
= V
SS
or V
CC
T
A
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V
(Note)
V
CC
= 5.5V; F
CLK
= 20.0 MHz;
SO = Open
V
CC
= 2.5V; F
CLK
= 10.0 MHz;
SO = Open
V
CC
= 5.5V
V
CC
= 2.5V
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
, 85°C
CS = V
CC
= 2.5V, Inputs tied to V
CC
or
V
SS
, 85°C
V
CC
= 1.8V to 5.5V
V
CC
= 2.0V to 5.5V
DC CHARACTERISTICS
Param.
No.
D001
D002
D003
D004
D005
D006
D007
D008
D009
Sym.
V
IH1
V
IL1
V
IL2
V
OL
V
OL
V
OH
I
LI
I
LO
C
INT
Characteristic
High-level Input
Voltage
Low-level Input
Voltage
Low-level Output
Voltage
High-level Output
Voltage
Input Leakage
Current
Output Leakage
Current
Internal Capacitance
(all inputs and
outputs)
Test Conditions
D010
I
CCREAD
—
—
—
—
Standby Current
Deep Power-down
Current
—
—
10
5
7
5
12
1
mA
mA
mA
mA
A
µA
Operating Current
D011
D012
D013
Note:
I
CCWRITE
I
CCS
I
CCSPD
This parameter is periodically sampled and not 100% tested.
DS20001836J-page 2
2007-2015 Microchip Technology Inc.
25AA1024
TABLE 1-2:
AC CHARACTERISTICS (CONTINUED)
Industrial (I)*:
T
A
= 0°C to +85°C
Industrial (I):
T
A
= -40°C to +85°C
*Limited industrial temperature range.
Min.
0
—
—
—
Max.
—
25
50
250
Units
ns
ns
ns
ns
(Note
1)
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
< 4.5
2.0
≤
V
CC
< 2.5
1.8
≤
V
CC
< 2.0, 0°C to +85°C
(Note
1)
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
< 4.5
2.0
≤
V
CC
< 2.5
1.8
≤
V
CC
< 2.0, 0°C to +85°C
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
< 4.5
2.0
≤
V
CC
< 2.5
1.8
≤
V
CC
< 2.0, 0°C to +85°C
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
< 4.5
2.0
≤
V
CC
< 2.5
1.8
≤
V
CC
< 2.0, 0°C to +85°C
(Note
1)
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
< 4.5
2.0
≤
V
CC
< 2.5
1.8
≤
V
CC
< 2.0, 0°C to +85°C
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
Byte or Page mode and Page
Erase
V
CC
= 1.8V to 5.5V
V
CC
= 2.0V to 5.5V
AC CHARACTERISTICS
Param.
No.
14
15
Sym.
T
HO
T
DIS
Characteristic
Output Hold Time
Output Disable Time
Conditions
16
T
HS
HOLD Setup Time
10
20
100
—
—
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
17
T
HH
HOLD Hold Time
10
20
100
18
T
HZ
HOLD Low to Output
High Z
15
30
150
19
T
HV
HOLD High to Output
Valid
15
30
150
—
—
—
100
100
10
10
6
—
ns
ns
ns
µs
µs
ms
ms
ms
20
21
22
23
24
25
T
REL
T
PD
T
CE
T
SE
T
WC
—
CS High to Standby mode
CS High to Deep
Power-down
Chip Erase Cycle Time
Sector Erase Cycle Time
Internal Write Cycle Time
Endurance
—
—
—
—
—
1M
E/W Page mode, 25°C, 5.5V (Note
2)
cycles
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
This parameter is not tested but established by characterization and qualification. For endurance
estimates in a specific application, please consult the Total Endurance™ Model which can be obtained
from Microchip’s web site at www.microchip.com.
3:
Includes T
HI
time.
DS20001836J-page 4
2007-2015 Microchip Technology Inc.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
