b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
V
GS
= 10 V thru 6 V
5V
I
D
- Drain Current (A)
6
I
D
- Drain Current (A)
6
8
4
4
T
C
= 125 °C
2
25 °C
2
4V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
0
0
1
-55 °C
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
6
Output Characteristics
S15-2974-Rev. D, 21-Dec-15
Transfer Characteristics
Document Number: 71235
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3430DV
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.25
500
Vishay Siliconix
R
DS(on)
- On-Resistance ()
0.20
C - Capacitance (pF)
V
GS
= 6.0 V
0.15
V
GS
= 10 V
0.10
400
C
iss
300
200
0.05
100
C
rss
C
oss
0.00
0
2
4
I
D
- Drain Current (A)
6
8
0
0
10
20
30
40
50
V
DS
- Drain-to-Source Voltage (V)
60
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (Normalized)
V
DS
= 50 V
I
D
= 2.4 A
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50
V
GS
= 10 V
I
D
= 2.4 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
6
4
2
0
0
1
2
3
4
Q
g
- Total Gate Charge (nC)
5
6
-25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
10
0.4
On-Resistance vs. Junction Temperature
R
DS(on)
- On-Resistance ()
I
D
= 2.4 A
0.3
I
S
- Source Current (A)
T
J
= 150 °C
0.2
0.1
T
J
= 25 °C
0.0
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
1
Source-Drain Diode Forward Voltage
S15-2974-Rev. D, 21-Dec-15
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71235
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71235.
S15-2974-Rev. D, 21-Dec-15
Document Number: 71235
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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