NTD4858N
Power MOSFET
Features
25 V, 73 A, Single N−Channel, DPAK/IPAK
•
•
•
•
•
Trench Technology
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
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V
(BR)DSS
25 V
R
DS(ON)
MAX
6.2 mW @ 10 V
9.3 mW @ 4.5 V
D
I
D
MAX
73 A
Applications
•
VCORE Applications
•
DC−DC Converters
•
High/Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
ID
Symbol
V
DSS
V
GS
I
D
Value
25
±20
14
10.9
2.0
11.2
8.7
1.3
73
56
54.5
146
45
−55
to
+175
45
6
112.5
W
A
A
°C
A
V/ns
mJ
4
Drain
YWW
48
58NG
W
A
W
A
1 2
3
Unit
V
V
A
G
S
N−CHANNEL MOSFET
4
4
1
4
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
3
CASE 369AD
CASE 369D
IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
2 3
1
2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
YWW
48
58NG
4
Drain
YWW
48
58NG
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 15 A
pk
, L = 1.0 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
2
1 2 3
1 Drain 3
Gate Drain Source
Gate Source
1 2 3
Gate Drain Source
Y
WW
4858N
G
= Year
= Work Week
= Device Code
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
March, 2013
−
Rev. 2
1
Publication Order Number:
NTD4858N/D
NTD4858N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJC−TAB
R
qJA
R
qJA
Value
2.75
3.5
73.5
116
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 10 V, V
DS
= 15 V, I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 30 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 12 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
12.6
20.2
16.4
5.1
7.7
17.3
23.8
2.8
ns
ns
1563
405
200
12.8
1.3
4.7
5.2
25.7
nC
19.2
nC
pF
I
D
= 30 A
I
D
= 30 A
V
GS
= 0 V,
V
DS
= 20 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
25
22
1.0
10
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.45
5.3
5.2
7.3
55
2.5
V
mV/°C
6.2
9.3
mW
S
V
DS
= 1.5 V, I
D
= 15 A
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD4858N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.87
0.73
11.6
7.8
3.7
3.0
nC
ns
1.2
V
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
2.49
0.0164
1.88
3.46
0.7
nH
W
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTD4858N
TYPICAL PERFORMANCE CURVES
90
I
D
, DRAIN CURRENT (AMPS)
80
70
60
50
40
30
20
10
0
0
1
2
3
4
3.0 V
2.8 V
5
3.4 V
3.2 V
90
I
D
, DRAIN CURRENT (AMPS)
80
70
60
50
40
30
20
10
0
1
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
2
3
4
5
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
≥
10 V
10 V
4V
3.8 V
T
J
= 25°C
3.6 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0
2
3
4
5
6
7
8
9
10
11
I
D
= 30 A
T
J
= 25°C
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
10
20
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 11.5 V
30
40
50
60
70
80
90
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
1000
100
10
1
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
−25
0
25
50
75
100
125
150
175
0.1
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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4
NTD4858N
TYPICAL PERFORMANCE CURVES
2000
1800
C, CAPACITANCE (pF)
1600
1400
1200
1000
800
600
400
200
0
0
C
rss
2.5
5
7.5
10
12.5
15
17.5
20
C
oss
C
iss
10
8
6
4
2
0
0
Q
1
Q
2
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 0 V
T
J
= 25°C
Q
T
V
GS
I
D
= 30 A
V
DD
= 15 V
T
J
= 25°C
4
8
12
16
20
24
28
Q
G
, TOTAL GATE CHARGE (nC)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
IS, SOURCE CURRENT (AMPS)
1000
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
t, TIME (ns)
100
V
GS
= 0 V
25
20
15
10
5
0
0.5
T
J
= 25°C
t
d(off)
t
f
t
r
10
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
I D, DRAIN CURRENT (AMPS)
120
Figure 10. Diode Forward Voltage vs. Current
I
D
= 15 A
100
80
60
40
20
0
25
50
75
100
125
150
175
100
10
ms
100
ms
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1 ms
10 ms
dc
10
1
0.1
0.1
T
J
, JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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