(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature Range
Symbol
V
RRM
V
RWM
V
R
Value
Unit
V
50
100
1.0
2.0
50
−65
to +175
A
I
F(AV)
I
FSM
T
J
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (T
L
= 25°C) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Symbol
Psi
JL
(Note 2)
R
qJA
Max
24
216
Unit
°C/W
1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4.
2. In compliance with JEDEC 51, these values (historically represented by R
qJL
) are now referenced as Psi
JL
.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 2.0 A, T
J
= 25°C)
(i
F
= 2.0 A, T
J
= 150°C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, T
J
= 25°C)
(Rated DC Voltage, T
J
= 150°C)
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/ms)
Symbol
v
F
Max
0.94
0.74
2.0
50
30
Unit
V
i
R
mA
t
rr
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
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MURA205T3G, SURA8205T3G, MURA210T3G, SURA8210T3G
TYPICAL CHARACTERISTICS
100
I
R
, REVERSE CURRENT (mA)
10
1
0.1
0.01
T
J
= 175°C
100
I
R
, REVERSE CURRENT (mA)
T
J
= 175°C
10
T
J
= 100°C
1
T
J
= 25°C
T
J
= 100°C
T
J
= 25°C
0
20
40
60
80
100
0.001
0.1
0
20
40
60
80
100
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Reverse Current
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
Figure 2. Maximum Reverse Current
10
T
C
= 175°C
100°C
25°C
1
10
T
C
= 175°C
100°C
25°C
1
0.1
0.1
0.01
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0.01
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 3. Typical Forward Voltage
Figure 4. Maximum Forward Voltage
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3
MURA205T3G, SURA8205T3G, MURA210T3G, SURA8210T3G
TYPICAL CHARACTERISTICS
50
45
C, CAPACITANCE (pF)
35
30
25
20
15
10
5
0
0
4
8
12
16
20
24
28
32
36
40
C, CAPACITANCE (pF)
40
NOTE: TYPICAL
CAPACITANCE AT
0 V = 45 pF
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
36
40
60
NOTE: MAXIMUM
CAPACITANCE AT
0 V = 48 pF
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
Figure 6. Maximum Capacitance
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
3.5
3
dc
R
qJL
= 24°C/W
T
J
= 175°C
I
F
, AVERAGE FORWARD CURRENT (A)
4
1.5
R
qJA
= 216°C/W
T
J
= 175°C
dc
1
SQUARE
WAVE
0.5
2.5 SQUARE WAVE
2
1.5
1
0.5
0
100 110
120
130
140
150
160
170
180
0
0
20
40
60
80
100
120
140
160
T
L
, LEAD TEMPERATURE (°C)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 7. Current Derating, Lead
Figure 8. Current Derating, Ambient
(FR−4 Board with Minimum Pad)
P
F
, AVERAGE POWER DISSIPATION (W)
2.5
T
J
= 175°C
2
1.5
1
0.5
0
SQUARE WAVE
dc
0
0.5
1
1.5
2
2.5
3
3.5
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 9. Power Dissipation
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MURA205T3G, SURA8205T3G, MURA210T3G, SURA8210T3G
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE G
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
DIM
A
A1
b
c
D
E
H
E
L
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
A1
L
c
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
2.000
0.079
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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