NTMFS4836N
Power MOSFET
Features
30 V, 90 A, Single N−Channel, SO−8FL
•
•
•
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
V
(BR)DSS
30 V
http://onsemi.com
R
DS(ON)
MAX
4.0 mW @ 10 V
6.0 mW @ 4.5 V
D (5,6)
90 A
I
D
MAX
Applications
Refer to Application Note AND8195/D
CPU Power Delivery
DC−DC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C,
t
p
= 10
ms
P
D
I
DM
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
ID
Symbol
V
DSS
V
GS
I
D
Value
30
±20
18
13
2.25
11
8
0.89
90
65
55.6
180
−55
to
+150
46
6
242
W
A
°C
A
V/ns
mJ
W
A
W
A
Unit
V
V
A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
4836N
AYWZZ
D
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 22 A
pk
, L = 1.0 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
ORDERING INFORMATION
Device
NTMFS4836NT1G
NTMFS4836NT3G
Package
SO−8FL
(Pb−Free)
SO−8FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
May, 2012
−
Rev. 7
1
Publication Order Number:
NTMFS4836N/D
NTMFS4836N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJA
R
qJA
Value
2.25
55.6
140.8
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 V to
11.5 V
V
GS
= 4.5 V
Forward Transconductance
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V;
I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V;
I
D
= 30 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 15 V, I
D
= 15 A
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
14
30
20
12
8.0
27
31
7.0
ns
ns
2677
565
307
20
3.2
8.0
8.0
45
nC
28
nC
pF
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
25
1
10
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
6.0
2.8
2.8
4.8
4.8
24
2.5
V
mV/°C
4.0
mW
6.0
S
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTMFS4836N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.83
0.7
27.1
13.8
13.3
16
nC
ns
1.2
V
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
0.65
0.005
1.84
1.2
nH
nH
nH
W
http://onsemi.com
3
NTMFS4836N
TYPICAL PERFORMANCE CURVES
120
110
I
D
, DRAIN CURRENT (AMPS)
100
90
80
70
60
50
40
30
20
10
0
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 4.5 to 5.0 V
T
J
= 25°C
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
0
1
2
3
4
5
6
7
8
9
10
110
100
90
80
70
60
50
40
30
20
10
0
0
1
T
J
= 25°C
T
J
= 125°C
2
3
T
J
=
−55°C
4
5
6
V
DS
≥
10 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.030
0.025
0.020
0.015
0.010
0.005
0
2
4
6
8
10
12
I
D
= 30 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
10
15
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 11.5 V
20
25
30
35
40
45
50
55
60
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.80
1.60
1.40
1.20
1.00
0.80
0.60
−50
10
−25
0
25
50
75
100
125
150
I
D
= 30 A
V
GS
= 10 V & 4.5 V
I
DSS
, LEAKAGE (nA)
10,000
100,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1,000
T
J
= 125°C
100
4
8
12
16
20
24
28
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
4
NTMFS4836N
TYPICAL PERFORMANCE CURVES
5000
4500
C, CAPACITANCE (pF)
4000
3500
3000
2500
2000
1500
1000
500
0
15
10
5
0
5
V
GS
V
DS
10
15
20
C
oss
25
C
rss
C
iss
C
iss
T
J
= 25°C
12
Q
T
20
18
16
14
V
DS
V
GS
12
10
Q
gs
Q
gd
8
6
I
D
= 30 A
T
J
= 25°C
0
5
15
35
10
20
25
30
Q
G
, TOTAL GATE CHARGE (nC)
40
4
2
0
45
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
8
6
4
2
0
30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
IS, SOURCE CURRENT (AMPS)
V
GS
= 0 V
25
20
15
10
5
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
T
J
= 25°C
V
DS
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
t, TIME (ns)
100
t
f
t
d(off)
t
r
10
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (W)
100
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
I D, DRAIN CURRENT (AMPS)
10
ms
100
ms
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
10
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
1 ms
10 ms
dc
260
240
220
200
180
160
140
120
100
80
60
40
20
0
Figure 10. Diode Forward Voltage vs. Current
I
D
= 22 A
100
1
0.1
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
