200HF..L
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 200 A
FEATURES
• Diffused glass passivated die
• Standard JEDEC types
• Types up to 600 V V
RRM
• Stud cathode and stud anode version
• High surge capability
DO-205AC (DO-30)
RoHS
COMPLIANT
• Very low V
F
• RoHS compliant
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
F(AV)
200 A
TYPICAL APPLICATIONS
• Welders
• Power supplies
• Battery charges
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
50 Hz
I
FSM
60 Hz
50 Hz
60 Hz
V
RRM
T
J
Range
TEST CONDITIONS
VALUES
200
T
C
125
314
3570
A
3740
64
58
400 to 600
- 40 to 180
V
°C
kA
2
s
UNITS
A
°C
A
I
2
t
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
40
200HF
60
600
700
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
10
I
RRM
MAXIMUM
AT T
J
= 180 °C
mA
Document Number: 93500
Revision: 28-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
200HF..L
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 200 A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 115 °C case temperature
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
Low level value of forward
slope resistance
Maximum forward voltage drop
I
2
√t
V
F(TO)1
r
f1
V
FM
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 628 A, T
J
= 25 °C
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
200
125
314
3570
3740
3000
Sinusoidal half wave,
initial T
J
= T
J
maximum
3140
64
58
45
41
640
0.73
0.48
1.12
kA
2
√s
V
mΩ
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowed mounting torque
+ 0 - 20 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads
lubricated threads
TEST CONDITIONS
VALUES
- 40 to 180
- 55 to 180
0.25
K/W
0.08
11
10
120
N·m
g
UNITS
°C
DO-205AC (DO-30)
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93500
Revision: 28-May-08
200HF..L
Standard Recovery Diodes
Vishay High Power Products
(Stud Version), 200 A
Maximum Allowable Case Temperature (°C)
180
170
160
150
140
130
120
110
100
0
50
30°
Maximum Average Forward Power Loss (W)
200HF..L
RthJC (DC) = 0.25 K/W
300
250
200
150
Conduction Angle
DC
180°
120°
90°
60°
30°
RMS Limit
60°
90°
120°
180°
100
50
0
0
Conduction Period
200HF..L
Tj = 180°C
100
150
200
250
50 100 150 200 250 300 350
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
180
160
140
120
100
80
0
100
Peak Half Sine Wave Forward Current (A)
200HF..L
RthJC (DC) = 0.25 K/W
3500
3000
2500
2000
1500
1000
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 180°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Conduction Period
30°
60°
90°
120°
180°
DC
200HF..L
500
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
200
300
400
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average Forward Power Loss (W)
250
200
150
100
50
0
0
50
100
150
200
Average Forward Current (A)
Conduction Angle
Peak Half Sine Wave On-state Current (A)
4000
180°
120°
90°
60°
30°
RMS Limit
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
3500
Initial Tj = 180°C
No Voltage Reapplied
3000
Rated Vrrm Reapplied
2500
2000
1500
1000
200HF..L
200HF..L
Tj = 180°C
500
0.01
0.1
1
10
Pulse Train Duration(s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 93500
Revision: 28-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
200HF..L
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 200 A
Instantaneous Forward Current (A)
10000
200HF..L
1000
Tj = 180°C
Tj = 25°C
100
0.7
0.9 1.1 1.3 1.5 1.7 1.9
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(K/W)
1
Steady State Value
RthJC = 0.25 K/W
(DC Operation)
0.1
0.01
200HF..L
0.001
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 93500
Revision: 28-May-08
200HF..L
Standard Recovery Diodes
Vishay High Power Products
(Stud Version), 200 A
ORDERING INFORMATION TABLE
Device code
200
1
1
2
3
4
-
-
-
-
HF
2
40
3
P
4
V
5
L
6
1
7
Current rating (200 = 200 A)
Diode diffused
Voltage ratings
•
P = 1/2"-20UNF-2A
•
M = Metric M12 x 1.75
•
W = 3/8"-24UNF-2A
40 = 400 V
60 = 600 V
5
6
7
-
-
-
Glass-metal seal
L = Low V
F
•
1 = Lead 117 mm
•
2 = Lead 137 mm
•
3 = Lead 157 mm
Note: For “M” type contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95316
Document Number: 93500
Revision: 28-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
