IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
DISCRETE SEMICONDUCTORS
DATA SHEET
BTH151S-650R
Thyristor
High Repetitive Surge
Product
specification
March 2001
1;3
Semiconductors
Product specification
Thyristor
High Repetitive Surge
GENERAL DESCRIPTION
Passivated thyristor in a plastic envelope,
suitable for surface mounting, intended for
use in applications requiring high
bidirectional blocking voltage capability and
high thermal cycling performance. This
thyristor has a high repetitive surge
specification which makes it suitable for
applications where high inrush currents or
stall currents are likely to occur on a
repetitive basis.
BTH151S-650R
QUICK REFERENCE DATA
SYMBOL
V
DRM
, V
RRM
I
T(AV)
I
T(RMS)
I
TSM
I
TRM
PARAMETER
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
Repetitive peak on-state current
MAX.
650
7.5
12
110
60
UNIT
V
A
A
A
A
PINNING - SOT428
PIN
1
2
3
tab
DESCRIPTION
cathode
anode
gate
PIN CONFIGURATION
tab
SYMBOL
a
k
2
anode
1
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
CONDITIONS
half sine wave;
T
mb
≤
103 ˚C
all conduction angles
half sine wave; T
j
= 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10ms,
τ
= 3s, T
mb
≤
45˚C, no.
of surges = 100k
t = 10 ms
I
TM
= 20 A; I
G
= 50 mA;
dI
G
/dt = 50 mA/μs
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
1
UNIT
V
A
A
A
A
A
A
2
s
A/μs
A
V
V
W
W
˚C
˚C
650
7.5
12
I
TRM
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
Repetitive peak on-state
current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
110
121
60
61
50
2
5
5
5
0.5
150
125
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
March 2001
1
Rev 1.001
1;3
Semiconductors
Product specification
Thyristor
High Repetitive Surge
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
MIN.
-
-
BTH151S-650R
TYP.
-
75
MAX.
1.8
-
UNIT
K/W
K/W
Thermal resistance
junction to mounting base
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
I
L
I
H
V
T
V
GT
I
D
, I
R
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 23 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 125 ˚C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 ˚C
MIN.
-
-
-
-
-
0.25
-
TYP.
2
10
7
1.4
0.6
0.4
0.1
MAX.
15
40
20
1.75
1.5
-
0.5
UNIT
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
CONDITIONS
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform;
Gate open circuit
R
GK
= 100
Ω
I
TM
= 40 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/μs
V
D
= 67% V
DRM(max)
; T
j
= 125 ˚C;
I
TM
= 20 A; V
R
= 25 V; dI
TM
/dt = 30 A/μs;
dV
D
/dt = 50 V/μs; R
GK
= 100
Ω
MIN.
TYP.
MAX.
UNIT
t
gt
t
q
50
200
-
-
130
1000
2
70
-
-
-
-
V/μs
V/μs
μs
μs
Ip = 60 A
10ms
3 s (Minimum)
Fig.1. Repetitive surge conditions. I
P
=60A (f=50Hz) at Tc=45˚C. Maximum number of cycles n=100k. Repetitive
cycle T=3 seconds minimum.
March 2001
2
Rev 1.001
1;3
Semiconductors
Product specification
Thyristor
High Repetitive Surge
BTH151S-650R
15
Ptot / W
conduction
angle
degrees
30
60
90
120
180
form
factor
Tmb(max) / C
a
4
2.8
2.2
1.9
1.57
98
120
100
ITSM / A
IT
ITSM
a = 1.57
2.2
2.8
4
1.9
107
10
80
60
time
T
Tj initial = 25 C max
5
116
40
20
0
0
1
2
3
4
5
IF(AV) / A
6
7
125
8
0
1
1
10
100
Number of half cycles at 50Hz
1000
Fig.2. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
Fig.5. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
1000
ITSM / A
25
IT(RMS) / A
20
dI
T
/dt limit
100
15
10
IT
T
I TSM
time
5
Tj initial = 25 C max
10
10us
100us
T/s
1ms
10ms
0
0.01
0.1
1
surge duration / s
10
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.6. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
103˚C.
VGT(Tj)
VGT(25 C)
15
IT(RMS) / A
1.6
103 C
1.4
10
1.2
1
5
0.8
0.6
0
-50
0
50
Tmb / C
100
150
0.4
-50
0
50
Tj / C
100
150
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.7. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
March 2001
3
Rev 1.001
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