PD-95214A
IRF7828PbF
HEXFET
®
Power MOSFET for DC-DC Converters
•
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Lead-Free
S
S
S
G
1
2
3
4
8
7
A
D
D
D
D
6
5
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7828 has been optimized for all parameters that
are critical in synchronous buck converters including
R
DS(on)
, gate charge and Cdv/dt-induced turn-on immunity.
The IRF7828 offers particulary low R
DS(on)
and high Cdv/dt
immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
SO-8
T o p V ie w
DEVICE CHARACTERISTICS
IRF7828PbF
R
DS
(on)
Q
G
Q
sw
Q
oss
9.5mΩ
9.2nC
3.7nC
6.1nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
T
A
= 25°C
T
L
= 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
R
θJA
R
θJL
Max.
50
20
Units
°C/W
°C/W
T
J
, T
STG
I
S
I
SM
T
A
= 25°C
T
L
= 70°C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
IRF7828PbF
30
±20
13.6
11
100
2.5
1.6
–55 to 150
3.1
100
°C
A
W
A
Units
V
04/05/07
IRF7828PbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
Current
BV
DSS
R
DS
(on)
V
GS(th)
I
DSS
Min
30
–
1.0
–
–
I
GSS
Q
G
Q
G
Q
GS1
Q
GS2
Q
GD
Q
sw
Q
oss
R
G
t
d (on)
t
r
t
d (off)
t
f
C
iss
C
oss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
–
9.5
–
–
–
–
9.2
7.3
2.5
0.8
2.9
3.7
6.1
2.3
6.3
2.7
9.7
7.3
1010
360
110
Max
–
12.5
–
1.0
150
±100
14
–
–
–
–
–
–
–
–
–
–
–
–
–
–
pF
V
DS
= 15V, V
GS
= 0
ns
Ω
V
DD
= 15V, I
D
= 10A
V
GS
= 4.5V
Clamped Inductive Load
V
DS
= 10V, V
GS
= 0
nC
µA
nA
Units
V
m
Ω
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 4.5V, I
D
= 10A
V
DS
= V
GS
,I
D
= 250µA
V
DS
= 24V, V
GS
= 0
V
DS
= 24V, V
GS
= 0,
Tj = 125°C
Gate-Source Leakage
Current
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
V
GS
= ±20V
V
GS
=5.0V, I
D
=15A, V
DS
=16V
V
GS
= 5V, V
DS
< 100mV
V
DS
= 15V, I
D
= 10A
Current*
Reverse Transfer Capacitance C
rss
Source-Drain Rating & Characteristics
Parameter
Diode Forward
Voltage*
Reverse Recovery
Charge
Reverse Recovery
Charge (with Parallel
Schottky)
V
SD
Q
rr
Q
rr(s)
Min
–
–
–
Typ
–
13
13
Max
1.0
–
–
Units
V
nC
nC
Conditions
I
S
= 10A, V
GS
= 0V
di/dt
~
700A/µs
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
di/dt = 700A/µs
(with 10BQ040)
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Notes:
2
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400 µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board
Typ = measured - Q
oss
Typical values of R
DS
(on) measured at V
GS
= 4.5V, Q
G
, Q
SW
and Q
OSS
measured at V
GS
= 5.0V, I
F
= 10A.
www.irf.com
IRF7828PbF
2.0
12
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VGS , Gate-to-Source Voltage (V)
ID = 14A
VGS = 10V
ID = 10A
10
8
6
4
2
0
VDS= 24V
VDS= 15V
1.5
1.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
0
5
10
15
20
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
Fig 1.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1000
Ciss
Coss
100
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3.
On-Resistance Vs. Gate Voltage
Fig 4.
Typical Capacitance Vs.
Drain-to-Source Voltage
www.irf.com
3
IRF7828PbF
100.0
100.0
TJ = 150°C
ID, Drain-to-Source Current
(Α
)
ISD, Reverse Drain Current (A)
10.0
10.0
T J = 150°C
T J = 25°C
1.0
1.0
T J = 25°C
VGS = 0V
0.1
0.1
2.0
3.0
VDS = 15V
20µs PULSE WIDTH
4.0
5.0
6.0
0.0
0.5
1.0
1.5
VGS, Gate-to-Source Voltage (V)
VSD, Source-toDrain Voltage (V)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Typical Source-Drain Diode
Forward Voltage
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
www.irf.com
IRF7828PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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