• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PowerPAK
®
1212-8S
D
D 8
D
D 6 7
5
APPLICATIONS
• Synchronous rectification
• High power density DC/DC
D
3.
3
m
m
1
Top View
3.
m
3
m
3
4
S
G
Bottom View
2
S
1
S
• VRMs and embedded DC/DC
• Synchronous buck converter
• Load switching
• Battery management
S
N-Channel MOSFET
G
Ordering Information:
SiSS10DN-T1-GE3 (lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
SYMBOL
V
DS
V
GS
LIMIT
40
+20, -16
60
g
60
g
31.7
b, c
25
b, c
150
51.8
4.3
b, c
30
45
57
36
4.8
b, c
3
b, c
-55 to +150
260
UNIT
V
I
D
I
DM
I
S
I
AS
E
AS
A
mJ
P
D
W
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
b, f
SYMBOL
t
10 s
Steady State
R
thJA
R
thJC
TYPICAL
21
1.7
MAXIMUM
26
2.2
UNIT
°C/W
Maximum Junction-to-Case (Drain)
Notes
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. Package limited.
S16-0219-Rev. A, 08-Feb-16
Document Number: 65439
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiSS10DN
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20 V, -16 V
V
DS
= 40 V, V
GS
= 0 V
V= 40 V, V
DS GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 15 A
MIN.
40
-
-
1.1
-
-
-
30
-
-
-
-
-
-
-
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs,
T
J
= 25 °C
I
S
= 5 A
T
C
= 25 °C
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 20 V, V
GS
= 0 V
f = 1 MHz
V = 20 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 10 A
-
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
24
-5.5
-
-
-
-
-
MAX.
-
-
-
2.4
± 100
1
10
-
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
rss
/C
iss
Ratio
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
-
-
0.73
38
33
20
18
51.8
150
1.1
76
66
-
-
A
V
ns
nC
ns
3750
560
72
0.019
50
23
10.3
4.3
37
1.2
10
19
28
7
22
52
23
10
-
-
-
0.038
75
35
-
-
-
2.4
20
38
56
14
44
100
46
20
ns
nC
pF
0.00220 0.00265
0.00300 0.00360
70
-
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-0219-Rev. A, 08-Feb-16
Document Number: 65439
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiSS10DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
150
V
GS
= 10 V thru 4 V
Vishay Siliconix
Axis Title
10000
150
10000
120
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
90
2nd line
I
D
- Drain Current (A)
120
1000
1st line
2nd line
100
30
T
C
= 125 °C
V
GS
= 2 V
T
C
= -55 °C
90
60
V
GS
= 3 V
60
T
C
= 25 °C
100
30
0
0
0.5
1
1.5
2
2.5
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.005
10000
4500
C
iss
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.004
1000
1st line
2nd line
0.003
2nd line
C - Capacitance (pF)
V
GS
= 4.5 V
3600
1000
1st line
2nd line
C
oss
2700
0.002
V
GS
= 10 V
1800
100
100
0.001
900
C
rss
0
0
20
40
60
80
100
I
D
- Drain Current (A)
2nd line
10
0
0
8
16
24
32
40
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
2.0
I
D
= 15 A
V
GS
= 10 V
10000
8
V
DS
= 20V
V
DS
= 30V
1.7
1000
1st line
2nd line
1000
1st line
2nd line
100
10
6
V
DS
= 10V
1.4
V
GS
= 4.5 V
4
100
2
1.1
0.8
0
0
11
22
33
44
55
Q
g
- Total Gate Charge (nC)
2nd line
10
0.5
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-0219-Rev. A, 08-Feb-16
Document Number: 65439
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiSS10DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.01
I
D
= 15 A
Vishay Siliconix
Axis Title
10000
10
2nd line
I
S
- Source Current (A)
2nd line
R
DS(on)
- On-Resistance (Ω)
T
J
= 150 °C
0.008
1000
1st line
2nd line
100
0.002
T
J
= 25 °C
1000
1st line
2nd line
1
T
J
= 25 °C
0.006
T
J
= 125 °C
0.1
100
0.01
0.004
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.5
10000
120
100
1000
1st line
2nd line
-0.1
I
D
= 5 mA
Axis Title
10000
0.2
2nd line
V
GS(th)
- Variance (V)
80
2nd line
Power (W)
60
40
20
1000
1st line
2nd line
100
10
0.01
0.1
Time (s)
2nd line
1
10
-0.4
I
D
= 250 μA
100
-0.7
-1.0
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
0
0.001
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
I
DM
limited
10000
100
2nd line
I
D
- Drain Current (A)
I
D
limited
100 μs
Limited by R
DS(on) (1)
1 ms
10 ms
100 ms
1 Sec
10 Sec
DC
BVDSS limited
1000
1st line
2nd line
10
1
100
0.1
T
a
= 25 °C
Single pulse
0.01
0.01
(1)
10
100
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
S16-0219-Rev. A, 08-Feb-16
Document Number: 65439
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiSS10DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
120
100
2nd line
I
D
- Drain Current (A)
80
60
Package Limited
Vishay Siliconix
10000
1000
1st line
2nd line
100
10
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
Axis Title
10000
2.5
10000
2.0
1000
1000
2nd line
Power (W)
1st line
2nd line
1st line
2nd line
100
0.5
10
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
2nd line
1.5
1.0
0
40
20
0
Current Derating
a
Axis Title
70
56
2nd line
Power (W)
42
28
100
14
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-0219-Rev. A, 08-Feb-16
Document Number: 65439
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
氮化镓技术推动电源管理不断革新作者： Ahmad Bahai，德州仪器（TI）公司首席技术专家
https://e2echina.ti.com/resized-image/__size/1230x300/__key/communityserver-blogs-components-weblo ......
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