VS-HFA140NJ60CPbF
www.vishay.com
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 167 A
FEATURES
Lug
terminal
anode 1
Lug
terminal
anode 2
• Very low Q
rr
and t
rr
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
TO-244
Base common
cathode
• Reduced RFI and EMI
• Reduced snubbing
PRIMARY CHARACTERISTICS
I
F
(maximum)
V
R
I
F(DC)
at T
C
Package
Circuit configuration
167 A
600 V
84 A at 100 °C
TO-244
Two diodes common cathode
DESCRIPTION / APPLICATIONS
HEXFRED
®
diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI
F
/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Non-repetitive avalanche energy
Maximum power dissipation
Operating junction and storage
temperature range
SYMBOL
V
R
I
F
I
FSM
E
AS
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
Limited by junction temperature
L = 100 μH, duty cycle limited by maximum T
J
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
167
84
400
330
310
132
-55 to +150
μJ
W
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS PER LEG
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
V
BR
I
R
= 100 μA
I
F
= 70 A
Maximum forward voltage
V
FM
I
RM
C
T
L
S
I
F
= 140 A
I
F
= 70 A, T
J
= 125 °C
Maximum reverse leakage current
Junction capacitance
Series inductance
T
J
= 125 °C, V
R
= 480 V
V
R
= 200 V
See fig. 2
See fig. 3
See fig. 1
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1.37
1.58
1.29
1.2
140
7.0
MAX.
-
1.89
2.1
1.54
4
250
-
mA
pF
nH
V
UNITS
From top of terminal hole to mounting plane
Revision: 05-Jan-18
Document Number: 94051
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA140NJ60CPbF
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
Reverse recovery time (fig. 5)
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current (fig. 6)
I
RRM
Q
rr
dI
(rec)M
/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 70 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
33
80
140
8.5
14
340
980
300
220
MAX.
-
120
220
15
25
900
2300
-
-
A
ns
UNITS
Reverse recovery charge (fig. 7)
nC
Peak rate of recovery current (fig. 8)
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Thermal resistance, junction to case
Typical thermal resistance, case to heatsink
Weight
Mounting torque
(1)
Mounting torque center hole
Terminal torque
Vertical pull
2" lever pull
per leg
per module
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
-
-
30 (3.4)
12 (1.4)
30 (3.4)
-
-
MIN.
-55
-
-
TYP.
-
-
-
0.10
68
2.4
-
-
-
-
-
MAX.
150
0.38
0.19
-
-
-
40 (4.6)
18 (2.1)
40 (4.6)
80
35
lbf · in
lbf · in
(N · m)
g
oz.
°C/W
K/W
UNITS
°C
Note
(1)
Mounting surface must be smooth, flat, free or burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface.
Gradually tighten each mounting bolt in 5 - 10 lbf
in
steps until desired or maximum torque limits are reached
I
F
- Instantaneous Forward Current (A)
1000
10 000
150 °C
I
R
- Reverse Current (μA)
1000
125 °C
100
100
10
25 °C
1
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.2
0.7
1.2
1.7
2.2
2.7
3.2
3.7
0.1
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg)
Revision: 05-Jan-18
Document Number: 94051
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA140NJ60CPbF
www.vishay.com
Vishay Semiconductors
60
50
10 000
C
T
- Junction Capacitance (pF)
1000
40
I
RRM
(A)
140 A, 125°C
70 A, 125°C
30 A, 125°C
30
20
10
140 A, 25°C
70 A, 25°C
30 A, 25°C
100
10
1
10
100
1000
0
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
(Per Leg)
dI
F
dt
(A/μs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
(Per Leg)
Maximum Allowable Case Temperature (°C)
160
140
120
DC
3500
3000
140 A, 125°C
2500
Q
rr
(nC)
100
80
60
2000
1500
1000
70 A, 125°C
30 A, 125°C
140 A, 25°C
70 A, 25°C
40
20
0
0
30
60
90
120
150
180
500
0
100
30 A, 25°C
1000
I
F(DC)
- DC Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature vs.
DC Forward Current (Per Leg)
dI
F
dt
(A/μs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
(Per Leg)
250
10 000
200
140 A, 125°C
t
rr
(ns)
150
70 A, 125°C
30 A, 125°C
dI
(rec)
M/dt (A/μs)
1000
100
140 A, 125°C
70 A, 125°C
30 A, 125°C
140 A, 25°C
70 A, 25°C
30 A, 25°C
140 A, 25°C
70 A, 25°C
30 A, 25°C
50
0
100
1000
100
100
1000
dI
F
dt
(A/μs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
(Per Leg)
dI
F
dt
(A/μs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
(Per Leg)
Revision: 05-Jan-18
Document Number: 94051
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA140NJ60CPbF
www.vishay.com
1
D = 0.50
0.33
0.1
0.25
0.17
0.08
0.01
SINGLE
PULSE
( THERMAL RESPONSE )
Vishay Semiconductors
Z
thJC
- Thermal Response
0.001
1E-005
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 9 - Maximum Thermal Impedance Z
thJC
Characteristics
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 05-Jan-18
Document Number: 94051
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA140NJ60CPbF
www.vishay.com
Vishay Semiconductors
I
L(PK)
High-speed
switch
L = 100 µH
D.U.T.
R
g
= 25
Ω
Current
monitor
Freewheel
diode
+
V
d
= 50 V
V
(AVAL)
V
R(RATED)
Decay
time
Fig. 12 - Avalanche Test Circuit and Waveforms
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
HFA
2
140
3
NJ
4
60
5
C
6
PbF
7
Vishay Semiconductors product
HEXFRED
®
family
Average current rating
NJ = TO-244
Voltage rating (600 V)
C = two diodes common cathode
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95021
Revision: 05-Jan-18
Document Number: 94051
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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