VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 720 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case E-PUK (TO-200AB)
E-PUK (TO-200AB)
• High surge current capability
• Low thermal impedance
• High speed performance
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
Circuit configuration
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
C
/T
hs
E-PUK (TO-200AB)
Single SCR
720 A
400 V, 800 V
1.96 V
11 000 A
11 500 A
200 mA
55 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Range
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
720
55
1435
25
11 000
11 500
605
553
400 to 800
10 to 30
-40 to +125
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
I
DRM
/I
RRM
MAXIMUM AT
T
J
= T
J
MAXIMUM
mA
50
VS-ST333C..C
Revision: 13-Sep-17
Document Number: 93678
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100
µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
r
Voltage before turn-on V
d
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
1630
1630
1350
720
50
V
DRM
50
40
10/0.47
1420
1390
1090
550
2520
2670
2440
1450
50
V
DRM
-
2260
2330
2120
1220
7610
4080
2420
1230
50
V
DRM
-
6820
3600
2100
1027
V
A/µs
55
10/0.47
°C
/µF
A
55
40
10/0.47
55
40
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
I
2
t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
720 (350)
55 (75)
1435
11 000
11 500
9250
Sinusoidal half wave,
initial T
J
= T
J
maximum
9700
605
553
428
391
6050
1.96
0.91
0.93
0.58
0.58
600
1000
m
mA
V
kA
2
s
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
I
TM
= 1810 A, T
J
= T
J
maximum, t
p
= 10 ms sine wave pulse
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
,
I
G
= 1 A
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
Maximum turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
; I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5
source
T
J
= T
J
maximum,
I
TM
= 550 A, commutating dI/dt = 40 A/μs
V
R
= 50 V, t
p
= 500 μs, dV/dt: See table in device code
10
VALUES
MIN. MAX.
1000
1.1
µs
30
UNITS
A/µs
Revision: 13-Sep-17
Document Number: 93678
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
50
UNITS
V/µs
mA
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJ-hs
R
thC-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.09
0.04
0.020
0.010
9800
(1000)
83
N
(kg)
g
K/W
UNITS
°C
E-PUK (TO-200AB)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.010
0.012
0.015
0.022
0.036
DOUBLE SIDE
0.011
0.012
0.015
0.022
0.036
RECTANGULAR CONDUCTION
SINGLE SIDE
0.007
0.012
0.016
0.023
0.036
DOUBLE SIDE
0.007
0.013
0.017
0.023
0.037
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 13-Sep-17
Document Number: 93678
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
130
Maxim um Allowable Heatsin k Tem perature (°C)
ST333C..C Series
( Double Side Cooled )
R
th J-hs
(DC) = 0.04 K/W
130
Maximum Allowable Heatsink Temperature (°C)
120
110
100
90
80
70
60
50
40
30
20
0
100
200
300
400
500
600
Average On -state Current (A)
30°
60°
90°
120°
180°
C o nd uc tio n A ng le
ST333C..C Series
(Single Side Cooled)
R
th J- hs
(DC) = 0.09 K/W
120
110
100
90
80
70
60
50
40
30
20
0
30°
60°
C o ndu ctio n Pe riod
90°
120°
180°
DC
200 400 600 800 1000 1200 1400 1600
Average O n-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1 30
M a xim u m A llo w ab le H e a t sin k T e m p e ra t u re (°C )
1 20
1 10
1 00
90
80
70
60
50
40
30
20
0
30°
6 0°
90°
12 0°
1 80°
DC
Co nd uc tio n P e rio d
2 2 00
M a x im um A v e r a g e O n - st a t e Po w e r L o ss (W )
ST 3 3 3 C ..C S e rie s
(Sin g le S id e C o o le d )
R
th J-hs
( D C ) = 0 .0 9 K / W
2 0 00
1 8 00
1 6 00
1 4 00
1 2 00
1 0 00
8 00
6 00
4 00
2 00
0
0
20 0
400
60 0
80 0
1 00 0
A v e ra g e O n -st a t e C u rre n t (A )
C o ndu ctio n A ng le
1 8 0°
1 2 0°
90°
60°
30°
R M S Lim it
ST 3 3 3 C ..C S e r ie s
T
J
= 1 2 5°C
10 0 2 00 30 0 40 0 5 00 6 0 0 70 0 80 0 9 00
A v e ra g e O n -st a te C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
130
M a xim u m A llo w a b le H e at sin k T e m p e ra t u re (°C )
120
110
100
90
80
70
60
50
40
30
20
10
0
2 00
4 00
60 0
800
1 00 0
A v e ra g e O n - st a t e C u rre n t (A )
30°
60 °
90 °
1 2 0°
1 8 0°
C o nd uctio n A ng le
M a x im u m A v e ra g e O n - st a t e P o w e r Lo ss (W )
ST 3 3 3 C ..C S e r ie s
(D o ub le Sid e C o o le d )
R
thJ-h s
(D C ) = 0 .0 4 K /W
26 0 0
24 0 0
22 0 0
20 0 0
18 0 0
16 0 0
14 0 0
12 0 0
10 0 0
800
600
400
200
0
0
DC
1 8 0°
1 2 0°
90°
60°
30°
R M S L im it
C o ndu ctio n Pe rio d
S T3 3 3 C ..C Se rie s
T
J
= 1 2 5°C
20 0 4 0 0 6 0 0 8 0 0 1 0 00 1 2 00 14 0 0 1 60 0
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
Revision: 13-Sep-17
Document Number: 93678
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
0 .1
T ran sie n t T h e rm a l Im p e d a n c e Z
thJ-hs
(K / W )
S T3 3 3 C ..C Se r ie s
10000
Peak Half Sine W ave O n-state Current (A)
9500
9000
8500
8000
7500
7000
6500
6000
5500
5000
4500
1
At An y Rated L oad Con dition And W ith
Rated V
RR M
Applied Following Surge.
In itial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
0 .0 1
S te a d y St a t e V a lu e
R
th J-hs
= 0 .0 9 K /W
(S in gle Sid e C o o le d )
R
thJ-h s
= 0 .0 4 K /W
(D o u b le S id e C o o le d )
(D C O p e ra t io n )
ST333C..C Series
10
100
0 .0 0 1
0 .0 0 1
0 .0 1
0. 1
1
10
N um b e r O f E q ual A m plitud e Half C yc le C urrent Pulse s (N )
Sq u a re W a v e P u ls e D ur at io n (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
12000
Peak Half Sine Wave O n-state Curren t (A)
Maximum Reverse Recovery Charge - Q rr (µC)
Maxim um Non Repetitive Surge Current
V ersus Pulse Train Duration. C ontrol
11000
O f Con duction May Not Be M ain tained.
Initial T
J
= 125°C
10000
No Voltage Reapplied
Rated V
RR M
Reapplied
9000
8000
7000
6000
5000
ST333C..C Series
320
300
280
260
240
220
200
180
160
140
120
100
80
10
20
30
40
50
60
70
80
90 100
Rate O f Fall O f O n-state Current - di/dt (A/µs)
ST333C..C Series
T
J
= 125 °C
I
TM
= 50 0 A
3 00 A
2 00 A
10 0 A
50 A
4000
0.01
0.1
Pulse T rain Duration (s)
1
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 11 - Reverse Recovered Charge Characteristics
10000
M ax im u m R e v e rse R e c o v e ry C u rre n t - Irr (A )
Instantaneous On-state Current (A)
180
160
140
120
100
80
60
40
20
10
20
30
40
50
60
70
80
9 0 1 00
R a te O f Fa ll O f Fo rw a rd C ur re n t - d i/ d t (A /µ s)
ST 3 3 3 C ..C S e rie s
T
J
= 1 2 5 ° C
I
T M
= 5 00 A
3 00 A
20 0 A
1 00 A
50 A
T = 25°C
1000
J
T = 125°C
J
ST333C..C Series
100
0.5 1 1.5 2 2. 5 3 3. 5 4 4.5 5 5.5 6 6.5
Instan tan eous O n-state V oltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Revision: 13-Sep-17
Document Number: 93678
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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