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SMMBD330T1G

产品描述Schottky Diodes u0026 Rectifiers SS SHKY DIO 30V TR
产品类别分立半导体    二极管   
文件大小119KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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SMMBD330T1G概述

Schottky Diodes u0026 Rectifiers SS SHKY DIO 30V TR

SMMBD330T1G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
针数3
制造商包装代码419-04
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time4 weeks
配置SINGLE
二极管类型MIXER DIODE
最大正向电压 (VF)0.45 V
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流1 A
元件数量1
最高工作温度125 °C
最大输出电流0.2 A
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压30 V
表面贴装YES
技术SCHOTTKY
端子面层Tin (Sn)
处于峰值回流温度下的最长时间NOT SPECIFIED

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MMBD330T1G,
SMMBD330T1G,
MMBD770T1G,
SMMBD770T1G
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high−efficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications. They are housed in the
SOT−323/SC−70 package which is designed for low−power surface
mount applications.
Features
http://onsemi.com
SC−70/SOT−323
CASE 419
1
3
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
Available in 8 mm Tape and Reel
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Reverse Voltage
MMBD330T1G, SMMBD330T1G
MMBD770T1G, SMMBD770T1G
Forward Continuous Current (DC)
Nonrepetitive Peak Forward Current
(Note 1)
Forward Power Dissipation
T
A
= 25C
Junction Temperature
Storage Temperature Range
Symbol
V
R
Value
30
70
200
1.0
Unit
Vdc
MARKING DIAGRAMS
XX M
G
G
1
XX
4T
5H
M
G
= Specific Device Code
= MMBD330T1
= MMBD770T1
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon the manufacturing location.
I
F
I
FSM
P
F
T
J
T
stg
mA
A
mW
C
C
ORDERING INFORMATION
Device
Package
SC−70
(Pb−Free)
SC−70
(Pb−Free)
SC−70
(Pb−Free)
SC−70
(Pb−Free)
Shipping
3,000/T
ape & Reel
3,000/T
ape & Reel
3,000/T
ape & Reel
3,000/T
ape & Reel
MMBD330T1G
SMMBD330T1G
MMBD770T1G
SMMBD770T1G
120
−55
to +125
−55
to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 60 Hz Halfsine.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011
Rev. 6
1
Publication Order Number:
MMBD330T1/D

SMMBD330T1G相似产品对比

SMMBD330T1G MMBD330T1G
描述 Schottky Diodes u0026 Rectifiers SS SHKY DIO 30V TR IMUs - Inertial Measurement Units Absolute Orientation 9-Axis Sensor
Brand Name ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美)
针数 3 3
制造商包装代码 419-04 419-04
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
Factory Lead Time 4 weeks 1 week
配置 SINGLE SINGLE
二极管类型 MIXER DIODE MIXER DIODE
最大正向电压 (VF) 0.45 V 0.6 V
JESD-609代码 e3 e3
湿度敏感等级 1 1
元件数量 1 1
最高工作温度 125 °C 125 °C
峰值回流温度(摄氏度) NOT SPECIFIED 260
最大重复峰值反向电压 30 V 30 V
表面贴装 YES YES
技术 SCHOTTKY SCHOTTKY
端子面层 Tin (Sn) Tin (Sn)
处于峰值回流温度下的最长时间 NOT SPECIFIED 40

 
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