BFP193
Low Noise Silicon Bipolar RF Transistor
•
For low noise, high-gain amplifiers up to 2 GHz
•
For linear broadband amplifiers
•
f
T
= 8 GHz,
NF
min
= 1 dB at 900 MHz
•
Pb-free (RoHS compliant) package
•
Qualification report according to AEC-Q101 available
4
1
3
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP193
Marking
Pin Configuration
RCs
1=C 2=E 3=B 4=E -
Package
-
SOT143
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
Symbol
R
thJS
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
72°C
12
20
20
2
80
10
580
150
-55 ... 150
Value
V
mA
mW
°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Unit
Junction - soldering point
2)
1
T
135
K/W
S is measured on the collector lead at the soldering point to the pcb
2
For the definition of
R
thJS please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2014-04-07
BFP193
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 30 mA,
V
CE
= 8 V, pulse measured
h
FE
70
100
140
I
EBO
-
-
1
I
CBO
-
-
100
I
CES
-
-
100
V
(BR)CEO
12
-
-
typ.
max.
Unit
V
µA
nA
µA
-
2
2014-04-07
BFP193
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 50 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 10 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt,
Z
L
=
Z
Lopt
,
f
= 900 MHz
f
= 1.8 GHz
Transducer gain
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 900 MHz
f
= 1.8 GHz
Third order intercept point at output
2)
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 900 MHz
1dB Compression point
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 900 MHz
1
G
Unit
max.
-
0.9
GHz
pF
typ.
8
0.59
f
T
C
cb
6
-
C
ce
-
0.28
-
C
eb
-
2.25
-
NF
min
-
-
G
ma
-
-
|S
21e
|
2
-
-
IP
3
-
14.5
8.5
29.5
-
-
-
18
12
-
-
1
1.6
-
-
dB
dB
dBm
P
-1dB
-
13
-
1/2
ma
= |S
21
/
S
12
| (k-(k²-1)
)
2
IP3
value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.2 MHz to 12 GHz
3
2014-04-07
BFP193
Total power dissipation
P
tot
=
ƒ
(T
S
)
600
mW
500
450
P
tot
400
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120
°C
150
T
S
4
2014-04-07
Package SOT143
BFP193
5
2014-04-07
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