NDDP010N25AZ
Power MOSFET
250V, 10A, 420mΩ, N-Channel
Features
High Speed Switching
Low Gate Charge
ESD Diode-Protected Gate
100% Avalanche Tested
Pb-Free, Halogen Free and RoHS Compliance
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Electrical Connection
2,4
Specifications
Absolute Maximum Ratings
at Ta = 25C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW10s, duty cycle1%
Power Dissipation
Tc=25C
Junction Temperature
Storage Temperature
Source Current (Body Diode)
Avalanche Energy (Single Pulse) *
Lead Temperature for Soldering
Purposes, 3mm from Case for 10 Seconds
1
1. Gate
2. Drain
3. Source
4. Drain
Value
250
30
10
40
1
52
150
55 to
+150
10
15.5
260
Unit
V
V
A
A
1
Symbol
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
IS
EAS
TL
3
Packing Type:TL
Marking
W
C
C
A
mJ
C
TL
10N25
AZ
LOT No.
4
1 2
3
4
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient *
2
Symbol
R
JC
R
JA
Value
2.40
125
Unit
C/W
DPAK
1
2
3
IPAK
Note : *
1
VDD=50V, L=1mH, IAV=5A (Fig.1)
*
2
Insertion mounted
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Ordering & Package Information
Device
NDDP010N25AZT4H
NDDP010N25AZ-1H
Package
DPAK(TP-FA),
SC-63, TO-252
IPAK(TP),
SC-64, TO-251
Shipping
700pcs. / reel
500pcs. / bag
Memo
Pb-Free
and
Halogen Free
©
Semiconductor Components Industries, LLC, 2014
November 2014 - Rev. 2
1
Publication Order Number :
NDDP010N25AZ/D
NDDP010N25AZ
Electrical Characteristics
at Ta
½
25C
Value
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
IS=10A, VGS=0V
See Fig.3
IS=10A, VGS=0V, di/dt=100A/s
VDS=125V, VGS=10V, ID=10A
See Fig.2
44
31
16
4.7
4.6
0.96
130
540
1.2
ns
ns
nC
nC
nC
V
ns
nC
VDS=20V, f=1MHz
Conditions
min
ID=1mA, VGS=0V
VDS=250V, VGS=0V
VGS=±24V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=10V
2.5
6.5
320
980
80
25
18
26
420
250
1
10
4.5
typ
max
V
A
A
V
S
m
pF
pF
pF
ns
ns
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
Fig.3 Reverse Recovery Time Test Circuit
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