Si7403BDN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
a, b
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
a, b
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
a, b
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
c, d
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
- 20
±8
- 8
c
- 7.2
- 5.1
a, b
- 4.1
a, b
- 20
-8
- 2.6
a, b
9.6
6.1
3.1
a, b
2
a, b
- 55 to 150
260
°C
W
A
Unit
V
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Package limited.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73333
S-83051-Rev. B, 29-Dec-08
www.vishay.com
1
Si7403BDN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
32
11
Maximum
40
13
Unit
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 2.4
Ω
I
D
≅
- 4.1 A, V
GEN
= - 8 V, R
g
= 1
Ω
V
DD
= - 10 V, R
L
= 2.4
Ω
I
D
≅
- 4.1 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= - 10 V, V
GS
= - 8 V, I
D
= - 5.1 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 5.1 A
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
430
85
55
9.7
5.6
0.95
1.4
10
5
51
33
60
4
40
30
40
10
75
50
90
8
60
45
60
ns
Ω
15
8.5
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 5 mA
V
DS
= 0 V, V
GS
= - 8 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 5.1 A
V
GS
= - 2.5 V, I
D
= - 4.2 A
V
DS
= - 10 V, I
D
= - 5.1 A
- 20
0.059
0.080
10
0.074
0.110
- 0.45
- 0.77
- 100
-1
- 10
- 20
14
-2
- 1.0
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
www.vishay.com
2
Document Number: 73333
S-83051-Rev. B, 29-Dec-08
Si7403BDN
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 4.1 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 2.6 A, V
GS
= 0 V
- 0.7
20
8
12
8
Test Conditions
T
C
= 25 °C
Min.
Typ.
Max.
-8
- 20
- 1.2
40
16
Unit
Drain-Source Body Diode Characteristics
A
V
ns
nC
ns
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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