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BC857AT-7-F

产品描述Bipolar Transistors - BJT PNP BIPOLAR
产品类别半导体    分立半导体   
文件大小68KB,共3页
制造商Diodes
官网地址http://www.diodes.com/
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BC857AT-7-F概述

Bipolar Transistors - BJT PNP BIPOLAR

BC857AT-7-F规格参数

参数名称属性值
产品种类
Product Category
Bipolar Transistors - BJT
制造商
Manufacturer
Diodes
RoHSDetails
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-523-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max45 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current0.1 A
Gain Bandwidth Product fT100 MHz
最大工作温度
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min125
高度
Height
0.75 mm
长度
Length
1.6 mm
最小工作温度
Minimum Operating Temperature
- 55 C
系列
Packaging
MouseReel
系列
Packaging
Cut Tape
系列
Packaging
Reel
Pd-功率耗散
Pd - Power Dissipation
150 mW
工厂包装数量
Factory Pack Quantity
3000
宽度
Width
0.8 mm
单位重量
Unit Weight
0.000071 oz

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BC857AT, BT, CT
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Die Construction
Complementary NPN Types Available (BC847AT,BT,CT)
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Note 4 and 5)
A
C
TOP VIEW
B
G
H
K
M
E
B C
SOT-523
Dim
A
B
C
D
G
H
N
Min
0.15
0.75
1.45
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
Mechanical Data
Case: SOT-523
Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Terminal Connections: See Diagram
Marking Code: See Table Below & Diagram on Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.002 grams (approximate)
J
K
L
M
N
α
J
D
L
Type
BC857AT
BC857BT
BC857CT
Marking
3V
3W
3G
All Dimensions in mm
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θ
JA
T
j
, T
STG
Value
-50
-45
-5.0
-100
150
833
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 1)
(Note 1)
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
I
CBO
f
T
C
OB
NF
Min
-50
-45
-5
125
220
420
-600
100
Typ
290
520
-700
-900
Max
250
475
800
-300
-650
-750
-820
-15
-4.0
4.5
10
Unit
V
V
V
mV
mV
mV
NA
µA
MHz
pF
dB
Test Condition
I
C
= 10μA, I
B
= 0
I
C
= 10mA, I
B
= 0
I
E
= 1μA, I
C
= 0
V
CE
= -5.0V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
V
CE
= -5.0V, I
C
= -10mA, f = 100MHz
V
CB
= -10V, f = 1.0MHz
I
C
= -0.2mA, V
CE
= -5.0Vdc,
R
S
= 2.0KΩ, f = 1.0KHz,
BW = 200Hz
Characteristic
Collector-Base Breakdown Voltage
(Note 3)
Collector-Emitter Breakdown Voltage
(Note 3)
Emitter-Base Breakdown Voltage
(Note 3)
DC Current Gain
(Note 3) Current Gain A
B
C
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Output Capacitance
Noise Figure
Notes:
(Note 3)
(Note 3)
(Note 3)
(Note 3)
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30275 Rev. 9 - 2
1 of 3
www.diodes.com
BC857AT, BT, CT
© Diodes Incorporated

 
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