(Surge Applied at Rated Load Condtions Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature Range
Symbol
V
RRM
V
RWM
V
R
300
400
I
F(AV)
1.0
2.0
I
FSM
35
T
J
−65 to +175
°C
A
A
Value
Unit
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (T
L
= 25°C) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Symbol
Psi
JL
(Note 2)
R
θJA
Max
24
216
Unit
°C/W
1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4.
2. In compliance with JEDEC 51, these values (historically represented by R
θJL
) are now referenced as Psi
JL
.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 1.0 A, T
J
= 25°C)
(i
F
= 1.0 A, T
J
= 150°C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, T
J
= 25°C)
(Rated DC Voltage, T
J
= 150°C)
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/μs)
Symbol
v
F
1.1
0.89
i
R
5.0
150
t
rr
65
ns
μA
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
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2
MURA130, SURA8130, MURA140, NRVUA140V, SURA8140
100
I
R
, REVERSE CURRENT (mA)
T
J
= 175°C
10
1000
I
R
, REVERSE CURRENT (mA)
T
J
= 175°C
100
1
T
J
= 100°C
10
T
J
= 100°C
T
J
= 25°C
0.1
T
J
= 25°C
0.01
50
100
150
200
250
300
350
400
V
R
, REVERSE VOLTAGE (VOLTS)
1
50
100
150
200
250
300
350
400
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Reverse Current
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
Figure 2. Maximum Reverse Current
10
T
C
= 175°C
100°C
25°C
1
10
T
C
= 175°C
100°C
25°C
1
0.1
0.1
0.01
0.3 0.4 0.5 0.6
0.7 0.8 0.9
1
1.1 1.2 1.3 1.4
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
0.01
0.5 0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 3. Typical Forward Voltage
Figure 4. Maximum Forward Voltage
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3
MURA130, SURA8130, MURA140, NRVUA140V, SURA8140
30
25
C, CAPACITANCE (pF)
20
15
10
5
0
NOTE: TYPICAL
CAPACITANCE AT
0 V = 26 pF
30
25
C, CAPACITANCE (pF)
20
15
10
5
0
0
4
8
12
16
20
24
28
32
36
40
0
4
8
12
16
20
24
28
32
36
40
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
NOTE: MAXIMUM
CAPACITANCE AT
0 V = 29 pF
Figure 5. Typical Capacitance
Figure 6. Maximum Capacitance
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
5
1
dc
0.75
SQUARE WAVE
0.5
4
dc
3
2 SQUARE WAVE
1
0
80 90
100 110 120 130 140 150 160 170 180
T
L
, LEAD TEMPERATURE (°C)
0.25
0
0
20
40
60
80
100
120
140
160
180
T
A
, AMBIENT TEMPERATURE (°C)
Figure 7. Current Derating, Lead
Figure 8. Current Derating, Ambient
(FR−4 Board with Minimum Pad)
P
F
, AVERAGE POWER DISSIPATION (W)
4
3.5
3
2.5
SQUARE WAVE
2
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
dc
Figure 9. Power Dissipation
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4
MURA130, SURA8130, MURA140, NRVUA140V, SURA8140
PACKAGE DIMENSIONS
SMA
CASE 403D
ISSUE H
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
DIM
A
A1
b
c
D
E
H
E
L
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
L
c
A1
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
2.000
0.079
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
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ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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