1N5817, 1N5818, 1N5819
www.vishay.com
Vishay General Semiconductor
Schottky Barrier Plastic Rectifier
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-204AL (DO-41)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Diode variations
1.0 A
20 V, 30 V, 40 V
25 A
0.45 V, 0.55 V, 0.60 V
125 °C
DO-204AL
Single
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length at T
L
= 90 °C
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
V
RSM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
1N5817
20
14
20
24
1N5818
30
21
30
36
1.0
25
10 000
- 65 to + 125
1N5819
40
28
40
48
UNIT
V
V
V
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
Maximum instantaneous forward voltage
Maximum average reverse current
at rated DC blocking voltage
Typical junction capacitance
TEST CONDITIONS
1.0
3.1
T
A
= 25 °C
T
A
= 100 °C
4.0 V, 1.0 MHz
SYMBOL
V
F (1)
V
F (1)
I
R (1)
C
J
125
1N5817
0.450
0.750
1N5818
0.550
0.875
1.0
10
110
1N5819
0.600
0.900
UNIT
V
V
mA
pF
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 13-Aug-13
Document Number: 88525
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5817, 1N5818, 1N5819
www.vishay.com
Vishay General Semiconductor
SYMBOL
R
JA
(1)
R
JL
(1)
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
1N5817
1N5818
50
15
1N5819
UNIT
°C/W
Note
(1)
Thermal resistance from junction to lead vertical PCB mounted, 0.375" (9.5 mm) lead length with 1.5" x 1.5" (38 mm x 38 mm) copper pads
ORDERING INFORMATION
(Example)
PREFERRED P/N
1N5819-E3/54
1N5819-E3/73
UNIT WEIGHT (g)
0.332
0.332
PREFERRED PACKAGE CODE
54
73
BASE QUANTITY
5500
3000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
1.0
100
Instantaneous Forward Current (A)
Average Forward Current (A)
T
J
= 125 °C
10
Pulse Width = 300 μs
1 % Duty Cycle
0.75
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0.5
1
T
J
= 25 °C
0.25
0.1
0
0
20
40
60
80
100
120
140
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
30
100
25
Instantaneous Reverse Current (mA)
Peak Forward
Surge
Current (A)
10
T
J
= 125 °C
20
1
15
0.1
10
T
J
= 75 °C
5
0.01
T
J
= 25 °C
0.001
0
20
40
60
80
100
0
1
10
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Reverse Characteristics
Revision: 13-Aug-13
Document Number: 88525
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5817, 1N5818, 1N5819
www.vishay.com
Vishay General Semiconductor
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
10
100
1
1N5817
10
0.1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 7 - Typical Transient Thermal Impedance
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
100
1N5818, 1N5819
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-204AL (DO-41)
Junction Capacitance (pF)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Revision: 13-Aug-13
Document Number: 88525
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000