20CTH03/20CTH03FP
Vishay High Power Products
Hyperfast Rectifier,
2 x 10 A FRED Pt
TM
FEATURES
20CTH03
20CTH03FP
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Fully isolated package (V
INS
= 2500 V
RMS
)
• TO-220 designed and qualified for AEC Q101 level
• TO-220FP designed and qualified for industrial level
Base
common
cathode
2
1
Anode
2
Common
cathode
3
Anode
1
Anode
2
Common
cathode
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
3
Anode
TO-220AB
TO-220 FULL-PAK
PRODUCT SUMMARY
t
rr
(maximum)
I
F(AV)
V
R
35 ns
2 x 10 A
300 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
per diode
Average rectified forward current
(FULL-PAK) per diode
per device
Non-repetitive peak surge current
Operating junction and storage temperatures
I
FSM
T
J
, T
Stg
T
J
= 25 °C
I
F(AV)
SYMBOL
V
RRM
T
C
= 160 °C
T
C
= 135 °C
TEST CONDITIONS
VALUES
300
10
20
120
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 µA
I
F
= 10 A
I
F
= 10 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 300 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
300
-
-
-
-
-
-
TYP.
-
1.05
0.85
-
6
30
8
MAX.
-
1.25
0.95
20
200
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 93010
Revision: 05-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
20CTH03/20CTH03FP
Vishay High Power Products
Hyperfast Rectifier,
2 x 10 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/µs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 1 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 10 A
dI
F
/dt = 200 A/µs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
TYP.
-
-
31
42
2.4
5.6
36
120
MAX.
35
30
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Marking device
per diode
(FULL-PAK) per diode
SYMBOL
T
J
, T
Stg
R
thJC
Mounting surface, flat, smooth
and greased
Case style TO-220AB
Case style TO-220 FULL-PAK
TEST CONDTIONS
MIN.
- 65
-
-
TYP.
-
-
-
MAX.
175
1.5
3.9
20CTH03
20CTH03FP
UNITS
°C
°C/W
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93010
Revision: 05-Sep-08
20CTH03/20CTH03FP
Hyperfast Rectifier,
2 x 10 A FRED Pt
TM
100
100
T
J
= 175 °C
Vishay High Power Products
I
R
- Reverse Current (mA)
I
F
- Instantaneous
Forward Current (A)
10
T
J
= 150 °C
T
J
= 125 °C
1
T
J
= 100 °C
0.1
T
J
= 75 °C
T
J
= 50 °C
0.01
T
J
= 25 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.001
50
100
150
200
250
300
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
50
100
150
200
250
300
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
1
1
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 93010
Revision: 05-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
20CTH03/20CTH03FP
Vishay High Power Products
10
Hyperfast Rectifier,
2 x 10 A FRED Pt
TM
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
t
1
t
2
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 5 - Maximum Thermal Impedance Z
thJC
Characteristics (FULL-PAK)
180
180
Allowable Case Temperature (°C)
Allowable Case Temperature (°C)
170
160
150
140
130
120
110
100
Square
wave
(D = 0.50)
Rated
V
R
applied
See note (1)
DC
170
DC
160
Square
wave
(D = 0.50)
Rated
V
R
applied
150
See note (1)
140
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
20
I
F(AV)
- Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Average Power Loss (W)
16
RMS limit
12
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
8
10
12
14
16
8
4
DC
0
0
2
4
6
I
F(AV)
- Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 8);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93010
Revision: 05-Sep-08
20CTH03/20CTH03FP
Hyperfast Rectifier,
2 x 10 A FRED Pt
TM
100
I
F
= 10 A
1000
I
F
= 10 A
Vishay High Power Products
Q
rr
(nC)
t
rr
(ns)
T
J
= 125 °C
T
J
= 125 °C
100
T
J
= 25 °C
T
J
= 25 °C
V
R
= 200
V
10
100
1000
10
100
V
R
= 200
V
1000
dI
F
/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
V
R
= 200
V
0.01
Ω
L = 70
µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point
where
a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area
under
curve defined
by
t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 12 - Reverse Recovery Waveform and Definitions
Document Number: 93010
Revision: 05-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
