Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
AUTOMOTIVE GRADE
AUIRF7316Q
S1
G1
S2
G2
1
2
8
7
D1
D1
D2
D2
V
DSS
R
DS(on)
typ.
max.
I
D
-30V
0.042
0.058
-4.9A
3
4
6
5
Top View
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest
processing techniques to achieve extremely low on-resistance per
silicon area. Additional features of these Automotive qualified
HEXFET Power MOSFET's
are a 150°C
junction
operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a
wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Base part number
AUIRF7316Q
Absolute Maximum Ratings
Package Type
SO-8
SO-8
AUIRF7316Q
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7316QTR
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
I
S
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Drain-Source Voltage
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
-30
-4.9
-3.9
-30
-2.5
2.0
1.3
± 20
140
-2.8
0.20
-5.0
-55 to + 150
Units
V
A
W
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JA
Junction-to-Ambient
Parameter
Typ.
–––
Max.
62.5
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-9-30
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
AUIRF7316Q
Min. Typ. Max. Units
Conditions
-30
––– –––
V V
GS
= 0V, I
D
= -250µA
––– 0.022 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.042 0.058
V
GS
= -10V, I
D
= -4.9A
––– 0.076 0.098
V
GS
= -4.5V, I
D
= -3.6A
-1.0 ––– -3.0
V V
DS
= V
GS
, I
D
= -250µA
–––
7.7
–––
S V
DS
= -15V, I
D
= -4.9A
––– ––– -1.0
V
DS
= -24V, V
GS
= 0V
µA
––– ––– -25
V
DS
= -24V,V
GS
= 0V,T
J
=55°C
––– ––– -100
V
GS
= -20V
nA
––– –––
100
V
GS
= 20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
23
3.8
5.9
13
13
34
32
710
380
180
34
5.7
8.9
19
20
51
48
–––
–––
–––
I
D
= -4.9A
nC
V
DS
= -15V
V
GS
= -10V, See Fig.10
V
DD
= -15V
I
D
= -1.0A
ns
R
G
= 6.0
R
D
= 15
V
GS
= 0V
pF
V
DS
= -25V
ƒ = 1.0MHz, See Fig.5
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= -1.7A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= -1.7A,
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Total Gate Charge
Q
g
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
t
d(on)
Turn-On Delay Time
Rise Time
t
r
t
d(off)
Turn-Off Delay Time
Fall Time
t
f
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
Reverse Recovery Time
t
rr
Q
rr
Reverse Recovery Charge
Typ. Max. Units
–––
–––
-0.78
44
42
-2.5
-30
-1.0
66
63
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
Starting T
J
= 25°C, L = 35mH, R
G
= 25, I
AS
= -2.8A.
SD
-2.8A,
di/dt
150A/µs,
V
DD
V
(BR)DSS
, T
J
150°C.
I
Pulse width
300µs;
duty cycle
2%.
Surface mounted on FR-4 board , t
sec.
2
2015-9-30
AUIRF7316Q
100
100
-ID , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS
TOP
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
10
10
-3.0V
-3.0V
20µs PULSE WIDTH
T
J
= 25°C
A
0.1
1
10
1
0.1
1
20µs PULSE WIDTH
T
J
= 150°C
A
10
1
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
100
100
-I
D
, Drain-to-Source Current (A)
T
J
= 25°C
T
J
= 150°C
10
-I
SD
, Reverse Drain Current (A)
T
J
= 150°C
10
T
J
= 25°C
1
3.0
3.5
4.0
4.5
V
DS
= -10V
20µs PULSE WIDTH
5.0
5.5
6.0
A
1
0.4
0.6
0.8
1.0
V
GS
= 0V
1.2
A
1.4
-V
GS
, Gate-to-Source Voltage (V)
-V
SD
, Source-to-Drain Voltage (V)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Source-Drain Diode
Forward Voltage
2015-9-30
3
AUIRF7316Q
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 4.9A
1.5
1.0
0.5
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature
(
°
C)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
300
E
AS
, Single Pulse Avalanche Energy (mJ)
250
ID
TOP
-1.3A
-2.2A
BOTTOM -2.8A
200
150
100
50
0
25
50
75
100
125
150
Starting T
J
, Junction Temperature (
°
C)
Fig. 7
Typical On-Resistance Vs. Gate Voltage
4
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
2015-9-30
AUIRF7316Q
20
I
D
= -4.9A
V
DS
=-15V
-V
GS
, Gate-to-Source Voltage (V)
16
12
8
4
0
0
10
20
30
40
Q
G
, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
1
10
100
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
2015-9-30
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