SRAM 8Mb,High-Speed-Automotive,Async with ECC,1M x 8,10ns,2.4v-3.6v,48 Ball mBGA (6x8mm), RoHS, Automotive temp
参数名称 | 属性值 |
产品种类 Product Category | SRAM |
制造商 Manufacturer | ISSI(芯成半导体) |
RoHS | Details |
Memory Size | 8 Mbit |
Organization | 1 M x 8 |
Access Time | 10 ns |
接口类型 Interface Type | Parallel |
电源电压-最大 Supply Voltage - Max | 3.6 V |
电源电压-最小 Supply Voltage - Min | 2.4 V |
Supply Current - Max | 65 mA |
最小工作温度 Minimum Operating Temperature | - 40 C |
最大工作温度 Maximum Operating Temperature | + 125 C |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | TFBGA-48 |
系列 Packaging | Reel |
Memory Type | SDR |
Moisture Sensitive | Yes |
工厂包装数量 Factory Pack Quantity | 2500 |
类型 Type | Asynchronous |
IS64WV10248EDBLL-10BLA3-TR | IS64WV10248EDBLL-10BLA3 | IS61WV10248EDBLL-10BLI | |
---|---|---|---|
描述 | SRAM 8Mb,High-Speed-Automotive,Async with ECC,1M x 8,10ns,2.4v-3.6v,48 Ball mBGA (6x8mm), RoHS, Automotive temp | SRAM 8Mb,High-Speed-Automotive,Async with ECC,1M x 8,10ns,2.4v-3.6v,48 Ball mBGA (6x8mm), RoHS, Automotive temp | SRAM 8M, 10ns, 2.4-3.6V 1M x 8 LP Async SRAM |
产品种类 Product Category |
SRAM | SRAM | - |
制造商 Manufacturer |
ISSI(芯成半导体) | ISSI(芯成半导体) | - |
RoHS | Details | Details | - |
Memory Size | 8 Mbit | 8 Mbit | - |
Organization | 1 M x 8 | 1 M x 8 | - |
Access Time | 10 ns | 10 ns | - |
接口类型 Interface Type |
Parallel | Parallel | - |
电源电压-最大 Supply Voltage - Max |
3.6 V | 3.6 V | - |
电源电压-最小 Supply Voltage - Min |
2.4 V | 2.4 V | - |
Supply Current - Max | 65 mA | 65 mA | - |
最小工作温度 Minimum Operating Temperature |
- 40 C | - 40 C | - |
最大工作温度 Maximum Operating Temperature |
+ 125 C | + 125 C | - |
安装风格 Mounting Style |
SMD/SMT | SMD/SMT | - |
封装 / 箱体 Package / Case |
TFBGA-48 | TFBGA-48 | - |
Memory Type | SDR | SDR | - |
Moisture Sensitive | Yes | Yes | - |
工厂包装数量 Factory Pack Quantity |
2500 | 480 | - |
类型 Type |
Asynchronous | Asynchronous | - |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved