VS-ETH1506-M3, VS-ETH1506FP-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt
®
FEATURES
• Hyperfast soft recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
2L TO-220AC
Base
cathode
2
2L TO-220 FULL-PAK
• Fully isolated package (V
INS
= 2500 V
RMS
)
• True 2 pin package
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
Cathode
3
Anode
1
Cathode
2
Anode
DESCRIPTION / APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
VS-ETH1506-M3
VS-ETH1506FP-M3
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
2L TO-220AC, 2L TO-220FP
15 A
600 V
1.25 V
21 ns
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current in DC
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
FULL-PAK
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 149 °C
T
C
= 94 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
15
160
-65 to +175
°C
UNITS
V
A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 15 A
I
F
= 15 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1.8
1.25
0.01
20
12
8
MAX.
-
2.45
1.6
15
200
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 15-Jun-15
Document Number: 93522
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETH1506-M3, VS-ETH1506FP-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
t
rr
I
RRM
Q
rr
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/μs
V
R
= 390 V
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
21
25
29
65
3.9
7.0
60
240
42
21
480
MAX.
26
36
-
-
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
nC
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style 2L TO-220AC
Case style 2L TO-220 FULL-PAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
-
6
(5)
TYP.
-
1.2
3.7
-
0.5
2
0.07
-
MAX.
175
1.4
4.3
70
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
FULL-PAK
ETH1506
ETH1506FP
Revision: 15-Jun-15
Document Number: 93522
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETH1506-M3, VS-ETH1506FP-M3
www.vishay.com
Vishay Semiconductors
1000
100
175°
C
150°
C
10
125°
C
1
0.1
0.01
25°
C
0.001
0.0001
0
100
200
300
400
500
600
100°
C
75°
C
50°
C
100
Reverse Current - I
R
(µA)
Tj = 175°
C
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
10
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Tj = 150°
C
Junction Capacitance - C
T
(pF)
100
Tj = 25°
C
10
1
0.5
1.0
1.5
2.0
2.5
3.0
1
0
100
200
300
400
500
600
Forward Voltage Drop - V
F
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 15-Jun-15
Document Number: 93522
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETH1506-M3, VS-ETH1506FP-M3
www.vishay.com
10
Vishay Semiconductors
Thermal Impedance Z
thJC
(°C/W)
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 5 - Maximum Thermal Impedance Z
thJC
Characteristics (FULL-PAK)
180
Allowable Case Temperature (°C)
180
Allowable Case Temperature (°C)
160
140
120
100
80
60
40
20
0
2
4
6
8 10 12 14 16
Average Forward Current - I
F
(AV)
(A)
DC
170
160
DC
150
140
130
0
2
4
6
8 10 12 14 16
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
30
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Average Power Loss ( Watts )
RMS Limit
25
20
15
10
5
0
0
5
10
15
20
25
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
Average Forward Current - I
F
(AV)
(A)
Fig. 8 - Forward Power Loss Characteristics
Revision: 15-Jun-15
Document Number: 93522
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETH1506-M3, VS-ETH1506FP-M3
www.vishay.com
100
90
500
600
Vishay Semiconductors
80
70
400
If = 15 A, 125°
C
If = 15 A, 125°
C
60
50
40
If = 15 A, 25°
C
30
Qrr ( nC )
trr ( ns )
300
200
If = 15 A, 25°
C
100
20
10
100
typical value
typical value
0
1000
100
1000
di
F
/dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. dI
F
/dt
V
R
= 200 V
di
F
/dt (A/µs )
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 12 - Reverse Recovery Waveform and Definitions
Revision: 15-Jun-15
Document Number: 93522
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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