HS3A - HS3M
Taiwan Semiconductor
3A, 50V - 1000V High Efficient Surface Mount Rectifier
FEATURES
●
●
●
●
●
Glass passivated junction chip
Ideal for automated placement
Low forward voltage drop
Low profile package
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
VALUE
3
50 - 1000
150
150
UNIT
A
V
A
°C
DO-214AB (SMC)
Single die
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in computer, automotive and
telecommunication
Configuration
MECHANICAL DATA
●
●
●
●
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave uperimposed on
rated load per diode
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
HS3A HS3B HS3D HS3F HS3G HS3J HS3K HS3M UNIT
HS3A HS3B HS3D HS3F HS3G HS3J HS3K HS3M
50
35
50
100
70
100
200
140
200
300
210
300
3
150
- 55 to +150
- 55 to +150
400
280
400
600
420
600
800
560
800
1000
700
1000
A
A
°C
°C
V
V
1
Version:I1708
HS3A - HS3M
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
60
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
HS3A
HS3B
HS3D
HS3F
HS3G
HS3J
HS3K
HS3M
(2)
CONDITIONS
SYMBOL
TYP.
-
MAX.
1.0
1.3
1.7
10
250
UNIT
V
V
V
µA
µA
Forward voltage per diode
(1)
I
F
= 3A, T
J
= 25°C
V
F
-
-
Reverse current @ rated V
R
per diode
T
J
= 25°C
T
J
= 125°C
I
R
-
-
Junction capacitance
Reverse recovery time
HS3A
HS3B
HS3D
HS3F
HS3G
HS3J
HS3K
HS3M
HS3A
HS3B
HS3D
HS3F
HS3G
HS3J
HS3K
HS3M
80
1 MHz, V
R
=4.0V
C
J
50
-
pF
-
pF
-
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
t
rr
-
50
ns
75
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:I1708
HS3A - HS3M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
4
AVERAGE FORWARD CURRENT(A)
175
150
125
100
75
50
25
0
HS3J - HS3M
HS3A - HS3G
f=1.0MHz
Vsig=50mVp-p
Fig.2 Typical Junction Capacitance
3
2
1
0
0
25
50
75
100
125
150
LEAD TEMPERATURE (
o
C)
JUNCTION CAPACITANCE (pF)
0.1
1
10
100
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
1000
10
10
Fig.4 Typical Forward Characteristics
1
UF1DLW
HS3A - HS3D
T
J
=125°C
100
T
J
=125
°
C
10
T
J
=25
°
C
0.01
HS3G
Pulse width
0.001
0.1
0
0.3
0.4
0.2
0.5
0.4
0.6
0.6
0.7
0.8
1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
HS3J - HS3M
0.8
0.9
1
1
1.2
1.1
1.4
1.2
FORWARD VOLTAGE (V)
4
Version:I1708
(A)
1
0.1
T
J
=25°C
HS3A - HS3M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
300
PEAK FORWARD SURGE CURRENT (A)
200
100
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram
5
Version:I1708
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