IRF7380PbF
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
l
Lead-Free
V
DSS
80V
73m
:
@V
GS
= 10V
R
DS(on)
max
I
D
3.6A
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 100°C
I
DM
P
D
@T
A
= 25°C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
80
± 20
3.6
2.9
29
2.0
0.02
2.3
-55 to + 150
Units
V
c
A
W
W/°C
V/ns
°C
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
h
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
Typ.
Max.
42
62.5
Units
°C/W
f
–––
–––
Notes
through
are on page 8
1
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© 2013 International Rectifier
September 16, 2013
IRF7380PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
80
–––
–––
2.0
–––
–––
–––
–––
–––
0.09
61
–––
–––
–––
–––
–––
–––
–––
73
4.0
20
250
200
-200
nA
V
mΩ
V
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 2.2A
V
DS
= 80V, V
GS
= 0V
V
DS
= 64V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V/°C Reference to 25°C, I
D
= 1mA
e
V
DS
= V
GS
, I
D
= 250µA
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
4.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
2.9
4.5
9.0
10
41
17
660
110
15
710
72
140
–––
23
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
ns
nC
S
I
D
= 2.2A
V
DS
= 40V
V
GS
= 10V
V
DD
= 40V
I
D
= 2.2A
R
G
= 24Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
Conditions
V
DS
= 25V, I
D
= 2.2A
e
e
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 64V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 64V
Max.
75
2.2
Avalanche Characteristics
E
AS
I
AR
g
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Ã
d
Units
mJ
A
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
50
110
3.6
29
1.3
–––
–––
A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 2.2A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 2.2A, V
DD
= 40V
di/dt = 100A/µs
e
2
www.irf.com
© 2013 International Rectifier
Spetember 16, 2013
IRF7380PbF
100
TOP
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
100
TOP
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
1
BOTTOM
BOTTOM
0.1
3.7V
1
3.7V
0.01
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
100
1000
0.1
0.1
1
20µs PULSE WIDTH
Tj = 150°C
10
100
1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
I
D
= 3.6A
RDS(on), Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α
)
2.0
10
T J = 150°C
1.5
1
T J = 25°C
1.0
VDS = 15V
20µs PULSE WIDTH
0
3.0
4.0
5.0
6.0
7.0
0.5
0.0
-60
-40
-20
0
20
40
60
80
100
V
GS
= 10V
120
140
160
VGS , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
3
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© 2013 International Rectifier
Fig 4.
Normalized On-Resistance
Vs. Temperature
September 16, 2013
IRF7380PbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C SHORTED
gs
ds
Crss = C
gd
Coss = Cds + Cgd
12
10
8
6
4
2
0
ID= 2.1A
10000
VGS , Gate-to-Source Voltage (V)
VDS= 64V
VDS= 40V
VDS= 16V
C, Capacitance(pF)
1000
Ciss
C oss
Crss
100
10
1
1
10
100
0
2
4
6
8
10
12
14
16
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
10
10
100µsec
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
T
J
= 25
°
C
T
J
= 150
°
C
1
1msec
10msec
0.1
0.0
0.5
1.0
V
GS
= 0 V
1.5
2.0
0.1
V
SD
, Source-to-Drain Voltage (V)
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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© 2013 International Rectifier
Fig 8.
Maximum Safe Operating Area
Spetember 16, 2013
IRF7380PbF
4.0
V
DS
V
GS
3.0
R
D
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
2.0
1.0
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0.0
25
50
75
100
125
150
T
A
, Ambient Temperature (°C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10b.
Switching Time Waveforms
100
(Z
thJA
)
D = 0.50
0.20
10
0.10
Thermal Response
0.05
0.02
1
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
+T
A
10
100
J
= P
DM
x Z
thJA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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© 2013 International Rectifier
September 16, 2013
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