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BC849C-TP

产品描述Bipolar Transistors - BJT NPN 30V 0.1A
产品类别半导体    分立半导体   
文件大小607KB,共4页
制造商MCC
官网地址http://www.mccsemi.com
下载文档 详细参数 全文预览

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BC849C-TP概述

Bipolar Transistors - BJT NPN 30V 0.1A

BC849C-TP规格参数

参数名称属性值
产品种类
Product Category
Bipolar Transistors - BJT
制造商
Manufacturer
MCC
RoHSDetails
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-23-3
Transistor PolarityNPN
Collector- Emitter Voltage VCEO Max30 V
Emitter- Base Voltage VEBO6 V
Gain Bandwidth Product fT100 MHz
最大工作温度
Maximum Operating Temperature
+ 150 C
Continuous Collector Current0.1 A
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
Pd-功率耗散
Pd - Power Dissipation
0.225 W
工厂包装数量
Factory Pack Quantity
3000
单位重量
Unit Weight
0.000282 oz

文档预览

下载PDF文档
MCC
Features
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BC846A
THRU
BC849C
NPN
Plastic-Encapsulate
Transistors
SOT-23
A
D
Maximum Ratings
DEVICE MARKING
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Power Dissipation: 0.225W (T
amb
=25 )(Note 1)
Collector Current: 0.1A
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Operating temperature : -55
Storage temperature : -55
to +150
to +150
BC846A=1A,46A; BC846B=1B,46B;
BC847A=1E,47A; BC847B=1F,47B; BC847C=1G,47C;
BC848A=1J,48A; BC848B=1K,48B: BC848C=1L,48C
BC849B=49B; BC849C=49C;
C
B
C
Electrical Characteristics @ 25
Symbol
Parameter
Unless Otherwise Specified
Min
Max
Units
G
B
F
E
E
OFF CHARACTERISTICS
V
(BR)CBO
H
K
J
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
H
FE(1)
V
CE(sat)
V
BE(sat)
f
T
Collector-Base Breakdown Voltage
(I
C
=10µAdc, I
E
=0)
BC846
BC847
BC848, BC849
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
BC846
BC847
BC848,
BC849
Collector-Emitter Breakdown Voltage
(I
E
=10
µAdc,
I
C
=0)
Collector Cut-off Current
BC846 (V
CB
=70V, I
E
=0)
BC847 (V
CB
=50V, I
E
=0)
BC848,
BC849 (V
CB
=30V, I
E
=0)
Collector Cut-off Current
BC846 (V
CE
=60V, I
B
=0)
BC847 (V
CE
=45V, I
B
=0)
BC848,
BC849 (V
CE
=30V, I
B
=0)
Emitter Cut-off Current
(V
EB
=5V, I
C
=0mA)
DC Current Gain(V
CE
=5V, I
C
=2mA)
BC846A, 847A, 848A
BC846B, 847B, 848B ,849B
BC847C, BC848C ,BC849C
Collector-Emitter Saturation Voltage
(I
C
=100mA, I
B
=5mA)
Base-Emitter Saturation Voltage
(I
C
=100mA, I
B
=5mA)
Transition Frequency
(V
CE
=5V, I
C
=10mA, f=100MHz)
Vdc
80
50
30
---
---
---
DIMENSIONS
Vdc
65
45
30
---
---
---
Vdc
6
---
---
0.1
µAdc
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
---
0.1
µAdc
Suggested Solder
Pad Layout
.031
.800
.035
.900
---
0.1
µAdc
110
200
420
---
220
450
800
0.5
.079
2.000
inches
mm
Vdc
---
1.1
Vdc
.037
.950
.037
.950
100
---
MHz
Note 1: Transistor mounted on an FR4 printed-circuit board
Revision:
D
www.mccsemi.com
1 of
4
2015/10/20

 
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