NTP45N06L, NTB45N06L
Power MOSFET
45 Amps, 60 Volts
Logic Level, N−Channel TO−220 and
D
2
PAK
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Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
45 AMPERES, 60 VOLTS
R
DS(on)
= 28 mW
N−Channel
D
•
•
•
•
•
•
•
•
•
•
•
•
•
Higher Current Rating
Lower R
DS(on)
Lower V
DS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter V
SD
Specification
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Pb−Free Packages are Available
G
S
4
4
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
1
TO−220AB
CASE 221A
STYLE 5
2
3
D
2
PAK
CASE 418B
STYLE 2
1
2
3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx
45N06LG
AYWW
NTx45N06LG
AYWW
1
Gate
2
Drain
NTx45N06L
x
A
Y
WW
G
3
Source
1
Gate
2
Drain
3
Source
= Device Code
= B or P
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 2
Publication Order Number:
NTP45N06L/D
NTP45N06L, NTB45N06L
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t
p
v10
ms)
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
v10
ms)
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy − Starting T
J
= 25°C
(V
DD
= 50 Vdc, V
GS
= 5.0 Vdc, L = 0.3 mH
I
L(pk)
= 40 A, V
DS
= 60 Vdc, R
G
= 25
W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds
I
D
I
D
I
DM
P
D
45
30
150
125
0.83
3.2
2.4
−55 to +175
240
Adc
Apk
W
W/°C
W
W
°C
mJ
Symbol
V
DSS
V
DGR
V
GS
V
GS
Value
60
60
"15
"20
Unit
Vdc
Vdc
Vdc
T
J
, T
stg
E
AS
°C/W
R
qJC
R
qJA
R
qJA
T
L
1.2
46.8
63.2
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in
2
).
ORDERING INFORMATION
Device
NTP45N06L
NTP45N06LG
NTB45N06L
NTB45N06LG
NTB45N06LT4
NTB45N06LT4G
Package
TO−220
TO−220
(Pb−Free)
D
2
PAK
D
2
PAK
(Pb−Free)
D
2
PAK
D
2
PAK
(Pb−Free)
Shipping
†
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
800 Tape & Reel
800 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTP45N06L, NTB45N06L
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate−Body Leakage Current (V
GS
=
±
15 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage (Note 4)
(V
DS
= V
GS
, I
D
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 4)
(V
GS
= 5.0 Vdc, I
D
= 22.5 Adc)
Static Drain−to−Source On−Voltage (Note 4)
(V
GS
= 5.0 Vdc, I
D
= 45 Adc)
(V
GS
= 5.0 Vdc, I
D
= 22.5 Adc, T
J
= 150°C)
Forward Transconductance (Note 4) (V
DS
= 8.0 Vdc, I
D
= 12 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= 48 Vdc, I
D
= 45 Adc,
V
GS
= 5.0 Vdc) (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
Reverse Recovery Time
(I
S
= 45 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 4)
Reverse Recovery Stored Charge
(I
S
= 45 Adc, V
GS
= 0 Vdc) (Note 4)
(I
S
= 45 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
t
rr
t
a
t
b
Q
RR
−
−
−
−
−
−
1.01
0.92
56
30
26
0.09
1.15
−
−
−
−
−
mC
Vdc
ns
(V
DD
= 30 Vdc, I
D
= 45 Adc,
V
GS
= 5.0 Vdc, R
G
= 9.1
W)
(Note 4)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
13
341
36
158
23
4.6
14.1
30
680
75
320
32
−
−
nC
ns
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
1212
352
90
1700
480
180
pF
V
GS(th)
1.0
−
R
DS(on)
−
V
DS(on)
−
−
g
FS
−
1.03
0.93
22.8
1.51
−
−
mhos
23
28
Vdc
1.8
4.7
2.0
−
Vdc
mV/°C
mW
V
(BR)DSS
60
−
I
DSS
−
−
I
GSS
−
−
−
−
1.0
10
±100
nAdc
67
67.2
−
−
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
3. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in
2
).
4. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperatures.
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3
NTP45N06L, NTB45N06L
80
V
GS
= 10 V
I
D
, DRAIN CURRENT (AMPS)
70
60
50
40
30
V
GS
= 8 V
20
10
0
0
1
V
GS
= 9 V
2
V
GS
= 5.5 V
V
GS
= 5 V
V
GS
= 6 V
V
GS
= 7 V
V
GS
= 4.5 V
I
D
, DRAIN CURRENT (AMPS)
80
70
60
50
40
30
20
10
0
1.8
T
J
= 100°C
T
J
= −55°C
T
J
= 25°C
V
DS
> = 10 V
V
GS
= 4 V
V
GS
= 3.5 V
3
4
2.6
3.4
4.2
5
5.8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.046
V
GS
= 5 V
0.042
0.038
0.034
0.03
0.026
0.022
T
J
= −55°C
0.018
0.014
0
10
20
30
40
50
60
70
80
T
J
= 25°C
T
J
= 100°C
0.046
0.042
0.038
0.034
V
GS
= 5 V
0.03
0.026
0.022
0.018
0
10
20
30
40
50
60
70
80
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 10 V
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
−50 −25
10
0
25
50
75
100
125
150
175
10000
I
D
= 22.5 A
V
GS
= 5 V
I
DSS
, LEAKAGE (nA)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 125°C
100
T
J
= 100°C
0
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTP45N06L, NTB45N06L
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
4000
3600
C, CAPACITANCE (pF)
3200
2800
2400
2000
1600
1200
800
400
0
10
V
DS
= 0 V
C
iss
C
rss
V
GS
= 0 V
T
J
= 25°C
6
5
Q
1
4
3
2
1
0
0
I
D
= 45 A
T
J
= 25°C
4
8
12
16
20
24
Q
T
Q
2
V
GS
C
iss
C
oss
C
rss
5 V
GS
0 V
DS
5
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
48
I
S
, SOURCE CURRENT (AMPS)
t
r
t
f
100
t
d(off)
40
32
24
16
8
0
0.6
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
V
DS
= 30 V
I
D
= 45 A
V
GS
= 5 V
t, TIME (ns)
t
d(on)
10
1
10
R
G
, GATE RESISTANCE (W)
100
0.64 0.68 0.72 0.76 0.8
0.84 0.88 0.92 0.96 1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 15 V
SINGLE PULSE
T
C
= 25°C
280
Figure 10. Diode Forward Voltage vs. Current
I
D
= 45 A
240
200
160
120
80
40
0
25
50
75
100
125
150
175
100
dc
10
10 ms
1 ms
1
R
DS(on)
Limit
Thermal Limit
Package Limit
100
ms
0.1
0.10
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
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