SGA3486ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA3486Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA3486Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one micron emitters provides high F
T
and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
Gain (dB)
24
18
IRL
GAIN
Features
Gain & Return Loss vs. Frequency
V
D
= 2.9 V, I
D
= 35 mA (Typ.)
ES
-10
-20
-30
-40
5
Return Loss (dB)
0
Si BiCMOS
12
6
0
0
ORL
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
1
FO
Parameter
Small Signal Gain
R
Min.
19.0
Specification
Typ.
21.0
18.0
16.5
12.7
12.5
24.6
26.9
5000
12.2
16.3
3.2
2.9
35
97
N
2
3
Frequency (GHz)
EW
4
SiGe HBT
D
Max.
23.0
3.2
39
SiGe BiCMOS
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
dB
dB
dB
V
mA
°C/W
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>8dB
1950MHz
1950MHz
1950MHz
IG
N
2.6
31
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Output Power at 1dB Compression
Output Third Intercept Point
Bandwidth Determined by Return
Loss
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance
(Junction - Lead)
N
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS20151204
O
T
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
S
High Gain: 18.0dB at
1950MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Condition
1 of 7
SGA3486Z
Absolute Maximum Ratings
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
D
)
Max RF Input Power
Max Junction Temp (T
J
)
Operating Temp Range (T
L
)
Max Storage Temp
Rating
70
4
+18
+150
-40 to +85
+150
Unit
mA
V
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
N
O
T
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FO
R
N
EW
Small Signal Gain
dB
23.2
22.4
21.0
18.0
Output Third Order Intercept Point
dBm
25.4
24.6
26.9
Output Power at 1dB Compression
dBm
12.3
12.7
12.5
Input Return Loss
dB
29.2
15.7
12.9
12.2
Output Return Loss
dB
27.2
20.4
18.1
16.3
Reverse Isolation
dB
24.9
24.8
24.4
22.9
Noise Figure
dB
2.8
2.8
3.2
Test Conditions: V
S
=5V, I
D
=35mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=-5dBm, R
BIAS
=62, T
L
=25°C, Z
S
=Z
L
=50
IG
Parameter
Unit
100
MHz
500
MHz
850
MHz
N
S
1950
MHz
2400
MHz
16.5
28.1
12.4
10.8
16.1
22.2
3.4
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
3500
MHz
14.2
ES
D
9.4
16.1
19.9
DS20151204
SGA3486Z
OIP
3
vs. Frequency
35
30
OIP
3
(dBm)
P
1dB
vs. Frequency
15
13
P
1dB
(dBm)
11
9
7
5
V
D
= 2.9 V, I
D
= 35 mA (Typ.)
V
D
= 2.9 V, I
D
= 35 mA (Typ.)
25
20
T
L
=+25ºC
15
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
T
L
=+25ºC
Noise Figure vs. Frequency
5
4
3
2
1
0
0
V
D
= 2.9 V, I
D
= 35 mA (Typ.)
Noise Figure (dB)
EW
N
DS20151204
O
T
FO
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
R
N
0.5
1
1.5
2
Frequency (GHz)
D
ES
T
L
=+25ºC
2.5
3
IG
N
3 of 7
S
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
SGA3486Z
|
S
|
vs. Frequency
21
|
S
|
vs. Frequency
11
24
18
S
21
(dB)
12
6
V
D
= 2.9 V, I
D
= 35 mA (Typ.)
0
-10
S
11
(dB)
-20
-30
V
D
= 2.9 V, I
D
= 35 mA (Typ.)
T
L
0
0
1
2
3
Frequency (GHz)
4
|
S
|
vs. Frequency
12
-10
-15
S
12
(dB)
-20
-25
0
-10
-20
-30
-40
-30
0
1
2
3
Frequency (GHz)
4
N
T
L
+25°C
-40°C
+85°C
EW
S
22
(dB)
D
ES
V
D
= 2.9 V, I
D
= 35 mA (Typ.)
IG
22
|
S
|
vs. Frequency
V
D
= 2.9 V, I
D
= 35 mA (Typ.)
N
5
0
1
2
3
Frequency (GHz)
S
T
L
+25°C
-40°C
+85°C
T
L
-40
4
+25°C
-40°C
+85°C
5
+25°C
-40°C
+85°C
5
0
1
N
O
T
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FO
R
2
3
Frequency (GHz)
4
5
DS20151204
SGA3486Z
Pin
1
2, 4
3
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead
inductance.
RF output and bias pin. DC voltage is present on this pin, therefor a DC-blocking capacitor is necessary for proper opera-
tion.
Application Schematic
R
BIAS
1 uF
1000
pF
Reference
Designator
Frequency (Mhz)
500
850
1950
2400
3500
V
S
C
B
C
D
220 pF
100 pF
68 nH
100 pF
68 pF
68 pF
22 pF
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
ES
RF in
C
B
4
1
SGA3486Z
3
2
C
B
Recommended Bias Resistor Values for I
D
=35mA
R
BIAS
=( V
S
-V
D
) / I
D
RF out
Supply Voltage(V
S
)
R
BIAS
IG
L
C
N
5V
68
C
D
L
C
S
33 nH
22 nH
8V
150
10 V
200
12 V
270
Evaluation Board Layout
R
L
C
R
BIAS
FO
N
1 uF
1000 pF
V
S
O
T
C
B
N
DS20151204
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EW
C
D
C
B
D
Note: R
BIAS
provides DC bias stability over temperature.
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
A34
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