VS-20BQ030PbF
Vishay High Power Products
Schottky Rectifier, 2 A
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
Cathode
Anode
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
SMB
PRODUCT SUMMARY
I
F(AV)
V
R
2.0 A
30 V
DESCRIPTION
The VS-20BQ030PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
2.0 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
2.0
30
350
0.37
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-20BQ030PbF
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
TEST CONDITIONS
50 % duty cycle at T
L
= 119 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
2.0
350
80
3.0
1.0
mJ
A
A
UNITS
Document Number: 94157
Revision: 04-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
VS-20BQ030PbF
Vishay High Power Products
Schottky Rectifier, 2 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
2A
Maximum forward voltage drop
V
FM (1)
4A
2A
4A
Maximum reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.470
0.550
0.370
0.470
0.5
15
200
2.0
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Notes
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJL (2)
R
thJA
DC operation
TEST CONDITIONS
VALUES
- 55 to 150
25
UNITS
°C
°C/W
80
0.10
0.003
Case style SMB (similar DO-214AA)
V2E
g
oz.
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Mounted 1" square PCB
(2)
www.vishay.com
2
For technical questions, contact:
diodestech@vishay.com
Document Number: 94157
Revision: 04-Mar-10
VS-20BQ030PbF
Schottky Rectifier, 2 A
Vishay High Power Products
10
100
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (mA)
T
J
= 150 °C
10
T
J
= 125 °C
1
0.1
0.01
0.001
0.0001
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
5
10
15
20
25
30
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
10
0
10
20
30
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
100
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.1
0.00001
0.0001
0.001
0.01
0.1
P
DM
t
1
t
2
1
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJL
+ T
L
1
10
.
100
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJL
Characteristics
Document Number: 94157
Revision: 04-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
3
VS-20BQ030PbF
Vishay High Power Products
Schottky Rectifier, 2 A
150
140
DC
1.2
130
120
110
100
90
80
70
60
50
0
0.5
1.0
1.5
2.0
2.5
3.0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
Average Power Loss (W)
Lead Temperature (°C)
1.0
0.8
0.6
0.4
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
DC
0.2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
I
FSM
- Non-Repetitive Surge Current (A)
1000
100
At any rated load condition
and with rated V
RRM
applied
following surge
10
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
(1)
Note
Formula used: T
L
= T
J
- (Pd + Pd
REV
) x R
thJL
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
www.vishay.com
4
For technical questions, contact:
diodestech@vishay.com
Document Number: 94157
Revision: 04-Mar-10
VS-20BQ030PbF
Schottky Rectifier, 2 A
ORDERING INFORMATION TABLE
Device code
Vishay High Power Products
VS-
1
1
2
3
4
5
6
7
20
2
-
-
-
-
-
-
-
B
3
Q
4
030
5
TR
6
PbF
7
HPP product suffix
Current rating
B = Single lead diode
Q = Schottky “Q” series
Voltage rating (030 = 30 V)
None = Box (1000 pieces)
TR = Tape and reel (3000 pieces)
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
Tape and reel
Bulk
www.vishay.com/doc?95017
www.vishay.com/doc?95029
www.vishay.com/doc?95034
www.vishay.com/doc?95397
www.vishay.com/doc?95284
Document Number: 94157
Revision: 04-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
