MWI 50-12 E7
MKI 50-12 E7
IGBT Modules
Sixpack, H Bridge
Short Circuit SOA Capability
Square RBSOA
13
1
2
5
6
9
10
16
15
14
3
4
17
11
12
13
1
2
9
10
16
14
I
C25
= 90 A
= 1200 V
V
CES
V
CE(sat) typ.
= 1.9 V
3
4
17
7
8
11
12
E72873
See outline drawing for pin arrangement
MWI
MKI
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
P
tot
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 22
Ω;
T
VJ
= 125°C
RBSOA; clamped inductive load; L = 100 µH
V
CE
= 900 V; V
GE
=
±
15 V; R
G
= 22
Ω;
T
VJ
= 125°C
SCSOA; non-repetitive
T
C
= 25°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
±
20
90
62
100
V
CES
10
350
V
V
A
A
A
µs
W
Features
• NPT
3
IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
• HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
- UL registered
Typical Applications
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
1.9
2.1
4.5
0.8
200
80
50
680
30
6.0
4.0
3.8
350
2.4
6.5
0.8
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
nC
0.35 K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 2 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 50 A
V
GE
= ±15 V; R
G
= 22
Ω
• MWI
- AC drives
- power supplies with power factor
correction
• MKI
- motor control
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
- supply of transformer primary winding
. power supplies
. welding
. X-ray
. battery charger
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 50 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
1-4
MWI 50-12 E7
MKI 50-12 E7
Diodes
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
110
70
A
A
Equivalent Circuits for Simulation
Conduction
Symbol
V
F
I
RM
t
rr
R
thJC
Module
Symbol
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Symbol
R
pin-chip
d
S
d
A
R
thCH
Weight
Conditions
I
F
= 50 A; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 50 A; di
F
/dt = -500 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
(per diode)
Characteristic Values
min.
typ. max.
2.2
1.6
40
200
2.6
V
V
A
ns
0.61 K/W
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 0.95 V; R
0
= 24 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 6 m
Ω
Thermal Response
Conditions
operating
Maximum Ratings
-40...+125
-40...+150
-40...+125
2500
2.7 - 3.3
°C
°C
°C
V~
Nm
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
IGBT (typ.)
C
th1
= 0.22 J/K; R
th1
= 0.26 K/W
C
th2
= 1.74 J/K; R
th2
= 0.09 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.151 J/K; R
th1
= 0.483 K/W
C
th2
= 1.003 J/K; R
th2
= 0.127 K/W
Characteristic Values
min.
typ. max.
5
mΩ
mm
mm
0.02
180
K/W
g
Creepage distance on surface
Strike distance in air
with heatsink compound
6
6
Dimensions in mm (1 mm = 0.0394")
* only for
devices with
NTC option
pins 5, 6, 7, 8 and 15 for MWI only
20070912a
© 2007 IXYS All rights reserved
2-4
MWI 50-12 E7
MKI 50-12 E7
120
A
VGE = 17 V
15 V
13 V
11 V
100
I
C
I
C
120
A
100
80
60
VGE = 17 V
15 V
13 V
11 V
80
60
40
20
T
VJ
= 25°C
9V
9V
40
20
T
VJ
= 125°C
0
0
1
2
V
CE
0
3
V
4
0
1
2
V
CE
3
V
4
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
160
A
I
C
V
CE
= 20 V
160
A
120
I
F
80
T
VJ
= 125°C
120
80
40
T
VJ
= 125°C
T
VJ
= 25°C
40
T
VJ
= 25°C
0
4
6
8
10
V
GE
0
12
V
14
0
1
2
V
F
V
3
Fig. 3 Typ. transfer characteristics
Fig. 4
Typ. forward characteristics of
free wheeling diode
300
ns
240
180
120
T
VJ
= 125°C
V
R
= 600 V
I
F
= 60 A
20
V
100
A
trr
15
V
GE
80
I
RM
t
rr
60
10
40
5
V
CE
= 600 V
I
C
= 50 A
20
IRM
60
0
0
0
100
200
300
400
nC
500
Q
G
0
0
200
400
600
-di/dt
MWI5012E7
800
A/μs
1000
Fig. 5
Typ. turn on gate charge
Fig. 6
Typ. turn off characteristics of
free wheeling diode
20070912a
© 2007 IXYS All rights reserved
3-4
MWI 50-12 E7
MKI 50-12 E7
20
mJ
td(on)
100
ns
90
80
70
60
50
E
off
8
mJ
td(off)
800
ns
600
t
16
E
on
6
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22
Ω
T
VJ
= 125°C
12
8
4
Eon
tr
t
4
400
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22
Ω
T
VJ
= 125°C
40
30
20
10
0
2
Eoff
tf
200
0
0
20
40
60
80
I
C
0
20
40
60
80
I
C
0
100
A
120
100 A
Fig. 7
Typ. turn on energy and switching
times versus collector current
300
ns
250
200
150
t
E
off
Fig. 8 Typ. turn off energy and switching
times versus collector current
12
mJ
1200
ns
1000
800
600
Eoff
15.0
mJ
12.5
E
on
10.0
7.5
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
td(on)
10
8
6
4
2
0
0
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
td(off)
t
Eon
5.0
2.5
0.0
0
20
40
60
80
R
G
tr
100
50
0
400
200
tf
100
Ω
120
20
40
60
80
R
G
100
Ω
120
0
Fig. 9
Typ. turn on energy and switching
times versus gate resistor
1
K/W
0.1
Fig.10 Typ. turn off energy and switching
times versus gate resistor
120
A
diode
IGBT
100
I
CM
80
60
40
Z
thJC
0.01
single pulse
0.001
20
0
0
R
G
= 22
Ω
T
VJ
= 125°C
200
400
600
800 1000 1200 1400
V
V
CE
0.0001
0.00001 0.0001 0.001
MWI5012E7
0.01
0.1
t
1
s 10
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
20070912a
© 2007 IXYS All rights reserved
4-4
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