PXAC201202FC
Thermally-Enhanced High Power RF LDMOS FET
120 W, 28 V, 1800 – 2200 MHz
Description
The PXAC201202FC is a 120-watt LDMOS FET for use in multi-
standard cellular power amplifier applications in the 1800 to 2200 MHz
frequency band. Its asymmetric and dual-path design make it ideal for
Doherty amplifier designs. It features input and output matching, and
a thermally-enhanced package with earless flange. Manufactured with
Infineon's advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PXAC201202FC
Package H-37248-4
Features
Single-carrier 3GPP WCDMA
V
DD
= 28 V, I
DQ
= 240 mA, ƒ = 1805 MHz
3.84 MHz bandwidth
24
60
•
Broadband internal matching
•
Asymmetric Doherty design
- Main: P1dB = 35 W Typ
- Peak: P1dB = 80 W Typ
•
Broadband internal matching
•
CW performance in a Doherty configuration,
1805 MHz, 28 V
- Output power = 100 W P
1dB
- Gain = 17.3 dB at 17.8 W Avg.
- Efficiency = 46% at 17.8 W Avg.
•
CW performance in a Doherty configuration,
2100 MHz, 28 V
- Output power = 15.8 W Avg.
- Gain = 15.5 dB
- Efficiency = 46%
•
Capable of handling 10:1 VSWR @ 28 V,
16 W (CW) output power
•
Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
•
Low thermal resistance
•
Pb-free and RoHS compliant
Peak/Average Ratio, Gain (dB)
20
16
12
8
4
0
Efficiency
Gain
40
20
0
PAR @ 0.01% CCDF
-20
-40
c201202fc-v2-gr1a
30
35
40
45
50
-60
Average Output Power (dBm)
RF Specifications, 1880 MHz
One-carrier WCDMA Characteristics
(tested in Infineon Doherty test fixture)
V
DD
= 28 V, V
GS(peak)
= 1.4 V, I
DQ
= 240 mA, P
OUT
= 16 W average, ƒ = 1880 MHz. 3GPP WCDMA signal: 3.84 MHz band-
width, 10 dB PAR @0.01% probability on CCDF.
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Efficiency (%)
Symbol
G
ps
Min
16
43
—
Typ
17
46
–29
Max
—
—
–26
Unit
dB
%
dBc
h
D
ACPR
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 05.1, 2016-06-22
PXAC201202FC
RF Specifications, 2140 MHz
One-carrier WCDMA Characteristics
(not subject to production test—verified by design/characterization in Infineon
Doherty test fixture)
V
DD
= 28 V, V
GS(peak)
= 1.2 V, I
DQ
= 240 mA, P
OUT
= 16 W average, ƒ = 2140 MHz. 3GPP WCDMA signal: 3.84 MHz band-
width, 10 dB PAR @0.01% CCDF.
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
16.0
39
—
Typ
16.5
42
–29
Max
—
—
–27
Unit
dB
%
dBc
h
D
ACPR
DC Characteristics
Characteristic
Drain-source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
R
DS(on)
V
GS
V
GS
Min
65
—
—
—
—
—
2.5
0.5
Typ
—
—
—
—
0.3
0.16
2.69
0.7
Max
—
1.0
10.0
1.0
—
—
2.8
1.6
Unit
V
µA
µA
µA
Gate Leakage Current
On-state Resistance
(main)
(peak)
Operating Gate Voltage
(main)
(peak)
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 242 mA
V
DS
= 28 V, I
DQ
= 0 A
W
W
V
V
Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 100 W CW)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
q
JC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.7
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PXAC201202FC V2 R0
PXAC201202FC V2 R250
Order Code
PXAC201202FCV2R0XTMA1
PXAC201202FCV2R250XTMA1
Package and Description
H-37248-4, ceramic open-cavity, earless
H-37248-4, ceramic open-cavity, earless
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 10
Rev. 05.1, 2016-06-22
PXAC201202FC
Typical Performance
(data taken in an Infineon test fixture)
Single-carrier 3GPP WCDMA
Single-carrier 3GPP WCDMA
V
DD
= 28 V, I
DQ
= 240 mA, ƒ = 1842 MHz
3.84 MHz bandwidth
24
60
24
V
DD
= 28 V, I
DQ
= 240 mA, ƒ = 1880 MHz
3.84 MHz bamdwidth
60
Peak/Average Ratio, Gain (dB)
20
16
12
8
4
0
Efficiency
Gain
Peak/Average Ratio, Gain (dB)
40
20
16
12
8
4
0
Efficiency
Gain
40
Efficiency (%)
0
0
PAR @ 0.01% CCDF
-20
-40
c201202fc-v2-gr1b
PAR @ 0.01% CCDF
-20
-40
c201202fc-v2-gr1c
30
35
40
45
50
-60
30
35
40
45
50
-60
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier 3GPP WCDMA
V
DD
= 28 V, I
DQ
= 240 mA,
ƒ = 1805 –1880 MHz,
3.84 MHz bandwidth, 10 dB PAR
Efficiency
-10
60
50
40
30
20
V
DD
= 28 V, I
DQ
= 240 mA, P
OUT
= 42 dBm,
PAR = 10 dB PAR
24
22
60
50
40
30
Single-carrier 3GPP WCDMA
Broadband Performance
ACP Up, ACP Low (dBc)
-20
-30
-40
-50
-60
-70
1805 MHz
1842 MHz
1880 MHz
c201202fc-v2-gr2d
Drain Efficiency(%)
Gain (dB)
20
18
16
14
12
1650
c201202fc-v2-gr3
Gain
20
10
0
2050
10
0
30
35
40
45
50
1750
1850
1950
Average Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 10
Rev. 05.1, 2016-06-22
Drain Efficiency (%)
Efficiency
Efficiency (%)
20
20
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