AUTOMOTIVE GRADE
Features
Advanced Planar Technology
Dynamic dV/dT Rating
Low On-Resistance
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRFR2405
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
I
D
I
D
55V
11.8m
16m
56A
30A
typ.
max.
(Silicon Limited)
(Package Limited)
D
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
Base part number
AUIRFR2405
Package Type
D-Pak
G
S
D-Pak
AUIRFR2405
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFR2405
AUIRFR2405TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Pead Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
56
40
30
220
110
0.71
± 20
130
34
11
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-11-19
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
AUIRFR2405
Min. Typ. Max. Units
Conditions
55
––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.052 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 11.8
16
m V
GS
= 10V, I
D
= 34A
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
30
––– –––
S V
DS
= 25V, I
D
= 34A
––– –––
20
V
DS
= 55 V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 44V,V
GS
= 0V,T
J
=150°C
––– ––– 200
V
GS
= 20V
nA
––– ––– -200
V
GS
= -20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
70
16
19
15
130
55
78
4.5
7.5
2430
470
100
2040
350
350
110
23
29
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 34A
nC
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 34A
ns
R
G
= 6.8
V
GS
= 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
pF
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 34A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 34A
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
Output Capacitance
C
oss
C
oss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Notes:
Typ. Max. Units
–––
–––
–––
62
170
56
220
1.3
93
260
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature.
V
DD
= 25V, starting T
J
= 25°C, L = 0.22mH, R
G
= 25, I
AS
= 34A
I
SD
34A,
di/dt
190A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300µs;
duty cycle
2%.
oss eff
. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994 .
R
is measured at T
J
approximately 90°C.
2
2015-11-19
AUIRFR2405
1000
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
100
4.5V
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
4.5V
10
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
10
100
1
10
0.1
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 56A
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
T
J
= 175
°
C
100
1.5
1.0
0.5
10
4.0
V DS= 25V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
V
GS
, Gate-to-Source Voltage (V)
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature
(
°
C)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance
Vs. Temperature
2015-11-19
3
AUIRFR2405
4000
3200
V
GS
, Gate-to-Source Voltage (V)
V
GS
C
iss
C
rss
C
oss
=
=
=
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
20
I
D
= 34A
V
DS
= 44V
V
DS
= 27V
V
DS
= 11V
16
C, Capacitance (pF)
2400
Ciss
12
1600
8
800
Coss
Crss
1
10
100
4
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
20
40
60
80
100
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
I
D
, Drain Current (A)
100
100
10us
T
J
= 175
°
C
100us
10
1ms
T = 25
°
C
J
10
1
0.4
V
GS
= 0 V
0.8
1.2
1.6
2.0
2.4
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
1
10
10ms
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2015-11-19
AUIRFR2405
60
LIMITED BY PACKAGE
50
I
D
, Drain Current (A)
40
30
20
10
Fig 10a.
Switching Time Test Circuit
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-11-19
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