Small Signal Transistor
BC856AW-G Thru. BC858CW-G
(PNP)
RoHS Device
Features
-Ideally suited for automatic insertion
-For Switching and AF Amplifier Applications
-Power dissipation
P
CM
: 0.15W (@T
A
=25°C)
-Collector current
I
CM
: -0.1A
-Collector-base voltage
V
CBO
: BC856W= -80V
BC857W= -50V
BC858W= -30V
-Operating and storage junction temperature
range: T
J
, T
STG
= -65 to +150°C
SOT-323
0.087 (2.20)
0.079 (2.00)
3
0.053(1.35)
0.045(1.15)
1
0.055 (1.40)
0.047 (1.20)
0.039 (1.00)
0.035 (0.90)
2
0.006 (0.15)
0.003 (0.08)
0.096 (2.45)
0.085 (2.15)
Mechanical data
-Case: SOT-323, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
0.004 (0.10) max
0.016 (0.40)
0.008 (0.20)
0.018 (0.46)
0.010 (0.26)
Circuit diagram
-1.BASE
-2.EMITTER
-3.COLLECTOR
1
3
Dimensions in inches and (millimeter)
2
Maximum Ratings
(at Ta=25°C unless otherwise noted)
Parameter
BC856W-G
BC857W-G
BC858W-G
BC856W-G
BC857W-G
BC858W-G
Symbol
Value
-80
-50
-30
Units
Collector-Base Voltage
V
CBO
V
Collector-Emitter Voltage
V
CEO
-65
-45
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current -Continuous
Collector Power Dissipation
I
C
-0.1
A
P
C
150
mW
Junction Temperature
T
J
150
O
C
Storage Temperature Range
T
STG
-65 to +150
O
C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR36
REV:B
Page 1
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristics (
T
A
= 25 °C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
BC856W-G
BC857W-G
BC858W-G
BC856W-G
BC857W-G
BC858W-G
Symbol
Test Conditions
MIN
-80
-50
-30
-65
-45
-30
MAX
Units
V
CBO
I
C
= -10μA , I
E
=0
V
Collector-Emitter Breakdown Voltage
V
CEO
I
C
= -10mA , I
B
=0
V
Emitter-Base Breakdown Voltage
V
EBO
I
E
= -1μA , I
C
=0
-5
V
Collector Cut-off Current
BC856AW,857AW,858AW
BC856BW,857BW,858BW
BC857CW,858CW
I
CBO
h
FE
V
CB
= -30V , I
E
=0
125
220
420
-15
250
475
800
nA
DC Current Gain
V
CE
= -5V , I
C
= -2mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Capacitance
V
CE(sat)
V
BE(sat)
f
T
C
ob
I
C
=-100mA , I
B
=-5mA
I
C
=-100mA , I
B
=-5mA
V
CE
=-5V , I
C
=-10mA
f=100MH
Z
V
CB
=-10V , f=1MH
Z
100
-0.65
-1.1
V
V
MH
Z
4.5
pF
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR36
REV:B
Page 2
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristic Curves (BC856AW-G Thru. BC858CW-G)
Fig.1- DC current gain as a function fo
collector current ;typical values.
500
BC857AW;V
CE
= -5V
Fig.2- Base-Emitter Voltage as a function
of collector current;typical values
-1200
-1000
400
-800
300
V
BE (mV)
Tamb=150°C
Tamb
=-55
°C
h
FE
-600
b
Tam
°C
=25
200
Tamb=25°C
-400
b=1
Tam
C
50 °
100
Tamb=-55°C
-200
BC857AW;V
CE
= -5V
0
-10
-2
-10
-1
-1
-10
-10
2
-10
3
0
-10
-2
-10
-1
-1
-10
-10
2
-10
3
I
C
(mA)
I
C
(mA)
Fig.3- Collector-emitter saturation voltage
as a function of collector current;
typical values.
-10
4
BC857AW;I
C
/I
B
= 20
Fig.4- Base-emitter saturation voltage
as a function of collector current;
typical values
-1200
-1000
-10
3
-800
V
CEsat (mV)
V
BEsat (mV)
Tamb
=-55
°C
C
-600
Tamb
= 25 °
Tamb=150°C
-10
2
-400
Tamb
= 15 0
°C
Tamb=25°C
Tamb=-55°C
-200
BC857AW;I
C
/I
B
= 20
2
3
-10
-10
-1
-1
-10
-10
-10
0
-10
-1
-1
-10
-10
2
-10
3
I
C
(mA)
I
C
(mA)
Fig.5- DC current gain as a function fo
collector current ;typical values.
1000
BC857BW;V
CE
= -5V
Fig.6- Base-emitter voltage as a function
of collector current;typical values.
-1200
-1000
800
Tamb=150°C
-800
600
V
BE (mV)
Tamb
= -5 5
°C
-600
b =2
Tam
5°C
h
FE
400
Tamb=25°C
-400
Tam
50
b=1
°C
200
Tamb=-55°C
-200
BC857BW;V
CE
=-5V
0
-10
-2
-10
-1
-1
-10
-10
2
-10
3
0
-10
-2
-10
-1
-1
-10
-10
2
-10
3
I
C
(mA)
I
C
(mA)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR36
REV:B
Page 3
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristic Curves (BC856AW-G Thru. BC858CW-G)
Fig.7- Collector-ernitter saturation voltage
as a function of collector current
typical values.
-10
4
BC857BW;I
C
/I
B
= 20
Fig.8- Base-Emitter Saturation Voltage as
a function of collector current;typical
values
-1200
-1000
-10
3
-800
VC
Esat (mV)
V
BEsat (mV)
Tamb
=-55
°C
C
-600
Tamb
= 25 °
Tamb=150°C
-10
2
-400
Tamb
= 15 0
°C
Tamb=25°C
Tamb=-55°C
-200
BC857BW;I
C
/I
B
= 20
2
3
-10
-10
-1
-1
-10
-10
-10
0
-10
-1
-1
-10
-10
2
-10
3
I
C
(mA)
I
C
(mA)
Fig.9- DC current gain as a function fo
collector current ;typical values.
1000
BC857CW;V
CE
= -5V
Fig.10- Base-Emitter Voltage as a function
of collector current;typical values
-1200
-1000
800
Tam
b
=150
°C
-800
600
V
BE (mV)
Tamb
= -5 5
°C
h
FE
-600
b=2
Tam
5°C
400
Tamb=25°C
Tamb=-55°C
-400
b =1
Tam
C
5 0°
200
-200
BC857CW;V
CE
= -5V
0
-10
-2
-10
-1
-1
-10
-10
2
-10
3
0
-10
-2
-10
-1
-1
-10
-10
2
-10
3
I
C
(mA)
I
C
(mA)
Fig.11- Collector-ernitter saturation voltage
as a function of collector current;
typical values.
-10
4
BC857CW;I
C
/I
B
= 20
Fig.12- Base-Emitter Saturation Voltage as
a function of collector current;typical
values
-1200
-1000
-10
3
-800
V
CEsat (mV)
V
BEsat (mV)
Tamb
= -5 5
°C
C
-600
Tamb
=25°
-10
2
Tamb=150°C
Tamb=25°C
-400
Tamb
=150
°C
-200
Tamb=-55°C
BC857CW;I
C
/I
B
= 20
2
3
-10
-10
-1
-1
-10
-10
-10
0
-10
-1
-1
-10
-10
2
-10
3
I
C
(mA)
I
C
(mA)
REV:B
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR36
Page 4
Comchip Technology CO., LTD.
Small Signal Transistor
Reel Taping Specification
P
0
P
1
d
Index hole
E
T
F
B
P
A
W
C
12
0
o
D
2
D
1
D
W
1
Trailer
.......
.......
10 pitches (min)
Device
.......
.......
.......
.......
Leader
.......
.......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
2.25
±
0.10
0.089
±
0.004
B
2.55
±
0.10
0.100
±
0.004
C
1.19
±
0.10
0.047
±
0.004
d
1.55
+
0.10
0.061
+
0.004
D
178
±
1.00
7.008
±
0.039
D
1
54.40
±
0.40
2.142
±
0.016
D
2
13.0
±
0.20
0.512
±
0.008
SOT-323
(mm)
(inch)
SYMBOL
E
1.75
±
0.10
0.069
±
0.004
F
3.50
±
0.05
0.138± 0.002
P
4.00
±
0.10
0.158
±
0.004
P
0
4.00
±
0.10
0.158
±
0.004
P
1
2.00
±
0.10
0.079
±
0.004
W
8.00
+
0.30 /
–0.10
0.315
+
0.012 /
–0.004
W
1
9.50
±
1.00
0.374
±
0.039
SOT-323
(mm)
(inch)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR36
REV:B
Page 5
Comchip Technology CO., LTD.
微控制器 MCU
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