8-Pin SO (derate 5.48mW/°C above +70°C)...............471mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS—MAX6006
(T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
Reverse Breakdown Voltage
Minimum Operating Current
Reverse Breakdown Change
with Current
Reverse Dynamic Impedance
Low-Frequency Noise
Temperature Coefficient
(Note 3)
Long-Term Drift
Thermal Hysteresis (Note 4)
TC
SYMBOL
V
R
I
RMIN
T
A
= +25°C,
I
R
= 1.2µA
I
R
= 1.2µA to 200µA
I
R
= 200µA to 2mA
I
R
= 1.2µA to 2mA (Note 2)
I
R
= 1.2µA, f = 0.1Hz to 10Hz
I
R
= 1.2µA
1000h at T
A
= +25°C
MAX6006A
MAX6006B
150
200
30
30
75
CONDITIONS
MAX6006A (0.2%)
MAX6006B (0.5%)
MIN
1.2475
1.2438
TYP
1.2500
1.2500
0.5
MAX
1.2525
1.2563
1.0
1.0
2.0
1.5
UNITS
V
µA
mV
Ω
µV
P-P
ppm/°C
ppm
ppm
V
R
change < 0.2% from V
R
at I
R
= 1.2µA
2
Maxim Integrated
MAX6006–MAX6009
1µA SOT23 Precision Shunt
Voltage Reference
ELECTRICAL CHARACTERISTICS—MAX6007
(T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
Reverse Breakdown Voltage
Minimum Operating Current
Reverse Breakdown Change
with Current
Reverse Dynamic Impedance
Low-Frequency Noise
Temperature Coefficient
(Note 3)
Long-Term Drift
Thermal Hysteresis (Note 4)
TC
SYMBOL
V
R
I
RMIN
T
A
= +25°C,
I
R
= 1.2µA
I
R
= 1.2µA to 200µA
I
R
= 200µA to 2mA
I
R
= 1.2µA to 2mA (Note 2)
I
R
= 1.2µA, f = 0.1Hz to 10Hz
I
R
= 1.2µA
1000h at T
A
= +25°C
MAX6007A
MAX6007B
150
200
50
30
75
CONDITIONS
MAX6007A (0.2%)
MAX6007B (0.5%)
MIN
2.0439
2.0378
TYP
2.048
2.048
0.5
MAX
2.0521
2.0582
1.0
1.3
2.3
1.8
UNITS
V
µA
mV
Ω
µV
P-P
ppm/°C
ppm
ppm
V
R
change < 0.2% from V
R
at I
R
= 1.2µA
ELECTRICAL CHARACTERISTICS—MAX6008
(T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
Reverse Breakdown Voltage
Minimum Operating Current
Reverse Breakdown Change with
Current
Reverse Dynamic Impedance
Low-Frequency Noise
Temperature Coefficient
(Note 3)
Long-Term Drift
Thermal Hysteresis (Note 4)
TC
SYMBOL
V
R
I
RMIN
CONDITIONS
MAX6008A (0.2%)
T
A
= +25°C,
I
R
= 1.2µA
MAX6008B (0.5%)
V
R
change < 0.2% from V
R
at I
R
= 1.2µA
I
R
= 1.2µA to 200µA
I
R
= 200µA to 2mA
I
R
= 1.2µA to 2mA (Note 2)
I
R
= 1.2µA, f = 0.1Hz to 10Hz
I
R
= 1.2µA
1000h at T
A
= +25°C
MAX6008A
MAX6008B
150
200
60
30
75
MIN
2.4950
2.4875
TYP
2.5000
2.5000
0.5
MAX
2.5050
2.5125
1.0
1.5
2.5
2
UNITS
V
µA
mV
Ω
µV
P-P
ppm/°C
ppm
ppm
Maxim Integrated
3
MAX6006–MAX6009
1µA SOT23 Precision Shunt
Voltage Reference
ELECTRICAL CHARACTERISTICS—MAX6009
(T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
Reverse Breakdown Voltage
Minimum Operating Current
Reverse Breakdown Change
with Current
Reverse Dynamic Impedance
Low-Frequency Noise
Temperature Coefficient
(Note 3)
Long-Term Drift
Thermal Hysteresis (Note 4)
TC
SYMBOL
V
R
I
RMIN
T
A
= +25°C,
I
R
= 1.2µA
CONDITIONS
MAX6009A (0.2%)
MAX6009B (0.5%)
MIN
2.9940
2.9850
TYP
3.000
3.000
0.5
MAX
3.0060
3.0150
1.0
1.7
2.7
2.2
75
30
75
150
200
UNITS
V
µA
mV
Ω
µV
P-P
ppm/°C
ppm
ppm
V
R
change < 0.2% from V
R
at I
R
= 1.2µA
I
R
= 1.2µA to 200µA
I
R
= 200µA to 2mA
I
R
= 1.2µA to 2mA (Note 2)
I
R
= 1.2µA, f = 0.1Hz to 10Hz
I
R
= 1.2µA
1000h at T
A
= +25°C
MAX6009A
MAX6009B
Note 1:
Note 2:
Note 3:
Note 4:
All devices are 100% production tested at T
A
= +25°C and are guaranteed by design for T
A
= T
MIN
to T
MAX
, as specified.
This parameter is guaranteed by the “reverse breakdown change with current” test.
TC is measured by the “box” method; i.e., (V
MAX
- V
MIN
)/(T
MAX
- T
MIN
).
Thermal hysteresis is defined as the change in the +25°C output voltage after cycling the device from T
FPGA/CPLD
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