PXAC241702FC
Thermally-Enhanced High Power RF LDMOS FET
150 W, 28 V, 2300 – 2400 MHz
Description
The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical
design intended for use in multi-standard cellular power amplifier
applications in the 2300 to 2400 MHz frequency band. Features in-
clude dual-path design, high gain and thermally-enhanced package
with earless flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PXAC241702FC
Package H-37248-4
V
DD
= 28 V, I
DQ
= 360 mA, ƒ = 2300 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
24
Single-carrier WCDMA Drive-up
Features
•
Asymmetrical Doherty design
- Main: P
1dB
= 60 W Typ
- Peak: P
1dB
= 90 W Typ
75
50
Peak/Average Ratio, Gain (dB)
Efficiency
Gain
•
Broadband internal input and output matching
•
Typical pulsed CW performance, 2350 MHz, 28 V,
Doherty configuration
- Output power at P
1dB
= 100 W
- Efficiency = 49%
- Gain = 17.5 dB
•
Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
•
Capable of handling 10:1 VSWR @28 V, 120 W
(CW) output power
•
Low thermal resistance
•
Pb-free and RoHS compliant
20
16
12
8
4
0
c241702fc-gr1a
0
-25
-50
-75
PAR @ 0.01% CCDF
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon Doherty test fixture)
V
DD
= 28 V, I
DQ(main)
= 360 mA, V
GS(peak)
= 1.2 V, P
OUT
= 28 W avg, ƒ = 2400 MHz. 3GPP signal, 3.84 MHz
channel bandwidth, 10 dB peak/average @ 0.01% probability on CCDF.
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Output PAR (at 0.01% probability on CCDF)
All published data at T
CASE
= 25°C unless otherwise indicated
Efficiency (%)
25
Symbol
G
ps
Min
15.5
46
—
6.5
Typ
16.5
52
–33.5
7.5
Max
—
—
–28.0
—
Unit
dB
%
dBc
dB
h
D
ACPR
OPAR
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2016-06-22
PXAC241702FC
DC Characteristics
(each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V(
BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
R
DS(on)
V
GS
V
GS
Min
65
—
—
—
—
—
2.3
0.8
Typ
—
—
—
—
0.19
0.16
2.65
1.30
Max
—
1
10
1
—
—
3.0
1.8
Unit
V
µA
µA
µA
W
W
V
V
Gate Leakage Current
On-State Resistance
(main)
(peak)
Operating Gate Voltage
(main)
(peak)
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 360 mA
V
DS
= 28 V, I
DQ
= 0 mA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 100 W CW)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
qJC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.53
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PXAC241702FC V1 R0
PXAC241702FC V1 R250
Order Code
PXAC241702FCV1R0XTMA1
PXAC241702FCV1R250XTMA1
Package and Description
H-37248-4, ceramic open-cavity, push-pull, earless
H-37248-4, ceramic open-cavity, push-pull, earless
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 10
Rev. 02.1, 2016-06-22
PXAC241702FC
Typical Performance
(data taken in an Infineon production test fixture)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 360 mA, ƒ = 2350 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
24
V
DD
= 28 V, I
DQ
= 360 mA, ƒ = 2400 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
75
24
Peak/Average Ratio, Gain (dB)
Peak/Average Ratio, Gain (dB)
Efficiency
Gain
Efficiency
Gain
75
50
20
16
12
8
4
0
c241702fc-gr1b
50
20
16
12
8
4
0
Efficiency (%)
0
0
-25
PAR @ 0.01% CCDF
-25
-50
-75
PAR @ 0.01% CCDF
-50
c241702fc-gr1c
25
30
35
40
45
50
55
25
30
35
40
45
50
55
-75
Average Output Power (dBm)
Average Output Power (dBm)
V
DD
= 28 V, I
DQ
= 360 mA, ƒ = 2300-2400 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz Bandwidth
0
70
60
50
40
30
2300 ACPL
2400 ACPL
2350 ACPU
2300 EFF
2400 EFF
2350 ACPL
2300 ACPU
2400 ACPU
2350 EFF
c241702fc-gr2
Single-carrier WCDMA 3GPP Drive-up
Single-carrier WCDMA
Broadband Performance
24
22
V
DD
= 28 V, I
DQ
= 360 mA, P
OUT
= 44.47 dBm,
3GPP WCDMA signal, 10 dB PAR
60
50
ACP Up & Low (dBc)
-10
-20
-30
-40
-50
-60
-70
30
35
40
Drain Efficiency(%)
20
Efficiency
40
30
20
18
16
14
12
2150
20
10
0
Gain
10
c241702fc-gr3
45
50
55
60
2250
2350
2450
0
2550
Average Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 10
Rev. 02.1, 2016-06-22
Drain Efficiency (%)
Gain (dB)
Efficiency (%)
25
25
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