NTTFS5C673NL
Power MOSFET
60 V, 9.3 mW, 50 A, Single N−Channel
Features
•
•
•
•
Small Footprint (3.3x3.3 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
60 V
R
DS(ON)
MAX
9.3 mW @ 10 V
I
D
MAX
50 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 3)
Power Dissipation
R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1, 2, 3)
Power Dissipation
R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
60
±20
50
35
46
23
13
9
3.1
1.6
290
−55 to
+175
52
88
260
A
°C
A
mJ
°C
W
A
W
Unit
V
V
A
13.3 mW @ 4.5 V
D (5)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1
1
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 2.3 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
WDFN8
(m8FL)
CASE 511AB
673L
A
Y
WW
G
S
S
S
G
673L
AYWWG
G
D
D
D
D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
3.2
48
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2017
1
March, 2017 − Rev. 1
Publication Order Number:
NTTFS5C673NL/D
NTTFS5C673NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
60
28
10
250
100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
= 20 V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
1.2
−4.5
2.0
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 25 A
I
D
= 25 A
8.0
11
37
9.3
13.3
mW
S
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
g
FS
V
DS
=15 V, I
D
= 25 A
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
V
GS
= 4.5 V, V
DS
= 30 V; I
D
= 25 A
V
GS
= 4.5 V, V
DS
= 30 V; I
D
= 25 A
V
GS
= 10 V, V
DS
= 30 V; I
D
= 25 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 25 V
880
450
11
4.5
9.5
1.0
2.0
0.8
2.9
V
nC
nC
nC
pF
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 30 V,
I
D
= 25 A, R
G
= 2.5
W
9.0
50
13
3.0
ns
V
SD
V
GS
= 0 V,
I
S
= 25 A
T
J
= 25°C
T
J
= 125°C
0.9
0.8
28
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 25 A
14
14
18
ns
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS5C673NL
TYPICAL CHARACTERISTICS
40
V
GS
= 3.6 V to 10 V
35
I
D
, DRAIN CURRENT (A)
30
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
2.8 V
2.6 V
2.4 V
3.2 V
3.0 V
I
D
, DRAIN CURRENT (A)
35
30
25
20
15
T
J
= 125°C
10
5
0
0
0.5
1.0
1.5
2.0
T
J
= −55°C
2.5
3.0
3.5
4.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
40
V
DS
= 3 V
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
40
35
30
25
20
15
10
5
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
= 25 A
T
J
= 25°C
20
Figure 2. Transfer Characteristics
T
J
= 25°C
18
16
14
12
10
8
6
0
10
20
30
40
50
60
70
80
90 100
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V
V
GS
= 4.5 V
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
−50 −25
1
0
25
50
75
100
125
150
175
I
D
= 25 A
V
GS
= 10 V
100,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
I
DSS
, LEAKAGE (nA)
T
J
= 175°C
T
J
= 125°C
1000
T
J
= 85°C
100
10
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTTFS5C673NL
TYPICAL CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
Q
g
, TOTAL GATE CHARGE (nC)
Q
gd
Q
gs
T
J
= 25°C
V
DS
= 30 V
I
D
= 25 A
Q
T
C, CAPACITANCE (pF)
1000
C
iss
C
oss
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
100
C
rss
10
1
0
10
20
30
40
50
60
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
100
t
r
I
S
, SOURCE CURRENT (A)
100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10,000
Figure 8. Gate−to−Source vs. Total Charge
V
GS
= 0 V
t, TIME (ns)
10
t
d(off)
10
t
d(on)
1
t
f
1
V
GS
= 4.5 V
V
DS
= 30 V
I
D
= 25 A
10
R
G
, GATE RESISTANCE (W)
100
T
J
= 125°C
0.1
0.3
0.4
0.5
T
J
= 25°C
0.6
0.7
0.8
T
J
= −55°C
0.9
1.0
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
I
PEAK
, DRAIN CURRENT (A)
100
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
1 ms
10
V
GS
≤
10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
500
ms
10
T
J(initial)
= 25°C
T
J(initial)
= 100°C
1
1
10 ms
0.1
0.01
dc
0.1
100
1E−5
1E−4
1E−3
1E−2
T
AV
, TIME IN AVALANCHE (s)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTTFS5C673NL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
10
R(t) (°C/W)
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
0.1
1
10
100
1000
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
NTTFS5C673NLTAG
NTTFS5C673NLTWG
Marking
673L
673L
Package
DFN5
(Pb−Free)
DFN5
(Pb−Free)
Shipping
†
1500 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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