AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR TRANSISTOR
WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
•
•
Low V
CE (on)
Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5µs SCSOA
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (on)
Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified*
G
AUIRGR4045D
AUIRGU4045D
C
PD - 97637
V
CES
= 600V
I
C
=
6.0A, T
C
= 100°C
V
CE(on) typ.
=
1.7V
E
n-channel
C
E
Benefits
•
High Efficiency in a Wide Range of Applications
•
Suitable for a Wide Range of Switching Frequencies due
to Low V
CE (ON)
and Low Switching Losses
•
Rugged Transient Performance for Increased Reliability
•
Excellent Current Sharing in Parallel Operation
•
Low EMI
D-Pak
AUIRGR4045D
G
I-Pak
AUIRGU4045D
G
C
E
G
Gate
C
Colletor
E
Emitter
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@T
C
=25°C
I
F
@T
C
=100°C
I
FM
V
GE
P
D
@ T
C
=25°
P
D
@ T
C
=100°
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Max.
600
12
6.0
18
24
8.0
4.0
24
± 20
± 30
77
39
-55 to + 175
300 (0.063 in. (1.6mm) from case)
Units
V
c
A
d
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θJA
R
θJA
Junction-to-Case - IGBT
Junction-to-Case - Diode
e
e
Min.
Typ.
–––
–––
–––
–––
Max.
1.9
6.8
50
110
Units
°C/W
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
g
–––
–––
–––
–––
*Qualification
standards can be found at http://www.irf.com/
1
www.irf.com
02/14/11
AUIRGR/U4045D
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min. Typ. Max. Units
600
—
—
—
—
3.5
—
—
—
—
—
—
—
—
0.36
1.7
2.07
2.14
—
-13
5.8
—
—
1.60
1.30
—
—
—
2.0
—
—
6.5
—
—
25
250
2.30
—
±100
nA
V
V
S
µA
V
V
Conditions
V
GE
= 0V, I
c
=100 µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
f
o
Ref.Fig
V/°C V
GE
= 0V, I
c
= 250µA ( 25 -175 C )
I
C
= 6.0A, V
GE
= 15V, T
J
= 25°C
I
C
= 6.0A, V
GE
= 15V, T
J
= 150°C
I
C
= 6.0A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 150µA
o
f
CT6
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆TJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
5,6,7,9,
10 ,11
9,10,11,12
mV/°C V
CE
= V
GE
, I
C
= 250µA ( 25 -175 C )
V
CE
= 25V, I
C
= 6.0A, PW =80µs
V
GE
= 0V,V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
=175°C
I
F
= 6.0A
I
F
= 6.0A, T
J
= 175°C
V
GE
= ± 20 V
gfe
I
CES
V
FM
I
GES
8
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
13
3.1
6.4
56
122
178
27
11
75
17
140
189
329
26
12
95
32
350
29
10
19.5
4.65
9.6
86
143
229
35
15
93
22
—
—
—
—
—
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
f = 1Mhz
ns
µJ
ns
µJ
nC
I
C
= 6.0A
V
CC
= 400V
V
GE
= 15V
Conditions
Ref.Fig
24
CT1
I
C
= 6.0A, V
CC
= 400V, V
GE
= 15V
R
G
= 47Ω, L=1mH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail and diode reverse recovery
CT4
I
C
= 6.0A, V
CC
= 400V
R
G
= 47Ω, L=1mH, L
S
= 150nH
T
J
= 25°C
I
C
= 6.0A, V
CC
= 400V, V
GE
= 15V
R
G
= 47Ω, L=1mH, L
S
= 150nH, T
J
= 175°C
Energy losses include tail and diode reverse recovery
13,15
CT4
WF1,WF2
14,16
CT4
WF1,WF2
CT4
I
C
= 6.0A, V
CC
= 400V
R
G
= 47Ω, L=1mH, L
S
= 150nH
T
J
= 175°C
23
T
J
= 175°C, I
C
= 24A
FULL SQUARE
V
CC
= 500V, Vp =600V
R
G
= 100Ω, V
GE
= +20V to 0V
SCSOA
Erec
trr
Irr
Short Circuit Safe Operating Area
Reverse recovery energy of the diode
Diode Reverse recovery time
Peak Reverse Recovery Current
—
—
—
—
5
178
74
12
—
—
—
—
µs
µJ
ns
A
V
CC
= 400V, Vp =600V
R
G
= 100Ω, V
GE
= +15V to 0V
T
J
= 175 C
V
CC
= 400V, I
F
= 6.0A
V
GE
= 15V, Rg = 47Ω, L=1mH, L
S
=150nH
o
4
CT2
22
CT3, WF4
17,18,19
20,21
WF3
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 1.0mH, R
G
= 47Ω.
Pulse width limited by max. junction temperature.
R
θ
is measured at T
J
approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
footprint and soldering techniques refer to application note #AN-994.
2
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AUIRGR/U4045D
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
D-Pak
I-PAK
Machine Model
Human Body Model
Charged Device Model
MSL1
Class M2 (+/- 200V)
AEC-Q101-002
†††
Moisture Sensitivity Level
ESD
Class H1A (+/- 500V)
AEC-Q101-001
Class C5 (+/- 1000V)
AEC-Q101-005
Yes
†††
†††
RoHS Compliant
Qualification standards can be found at International Rectifiers web site:
http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRGR/U4045D
14
12
10
80
70
60
50
Ptot (W)
0
20
40
60
80 100 120 140 160 180
T C (°C)
IC (A)
8
6
4
2
0
40
30
20
10
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
100
Fig. 2
- Power Dissipation vs. Case
Temperature
100
10µsec
10
100µsec
10
IC (A)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
IC A)
1
0
100
VCE (V)
1000
10
100
VCE (V)
1000
Fig. 3
- Forward SOA,
T
C
= 25°C, T
J
≤
175°C, V
GE
= 15V
20
20
Fig. 4
- Reverse Bias SOA
T
J
= 175°C, V
GE
= 20V
15
Top
ICE (A)
ICE (A)
10
V
= 10V
GE
Bottom VGE = 8.0V
V
= 18V
GE
V
= 15V
GE
VGE = 12V
15
Top
10
Bottom
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
5
5
0
0
2
4
6
8
10
0
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
4
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AUIRGR/U4045D
20
Top
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
20
18
16
14
12
IF (A)
15
Bottom
-40°C
25°C
175°C
ICE (A)
10
10
8
5
6
4
2
0
0
2
4
6
8
10
0
0.0
1.0
VF (V)
2.0
3.0
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
10
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
10
8
8
VCE (V)
ICE = 6.0A
4
ICE = 12A
VCE (V)
6
ICE = 3.0A
6
ICE = 3.0A
4
ICE = 6.0A
ICE = 12A
2
2
0
5
10
VGE (V)
15
20
0
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
10
IC, Collector-to-Emitter Current (A)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
20
18
16
14
12
10
8
6
4
2
0
4
6
8
10
12
14
16
T J = 25°C
8
ICE = 3.0A
ICE = 6.0A
ICE = 12A
4
T J = 175°C
VCE (V)
6
2
0
5
10
VGE (V)
15
20
VGE, Gate-to-Emitter Voltage (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
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