MUR30040CT thru MUR30060CTR
Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 400 to 600 V V
RRM
• Not ESD Sensitive
Twin Tower Package
V
RRM
= 400 V - 600 V
I
F(AV)
= 300 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MUR30040CT(R)
400
280
400
-55 to 150
-55 to 150
MUR30060CT(R)
600
420
600
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per pkg)
Peak forward surge current (per
leg)
Maximum instantaneous forward
voltage (per leg)
Maximum reverse current at rated
DC blocking voltage (per leg)
Maximum reverse recovery time
(per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
T
rr
Conditions
T
C
= 125 °C
t
p
= 8.3 ms, half sine
I
FM
= 150 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
MUR30040CT(R)
300
2750
1.3
25
3
110
MUR30060CT(R)
300
2750
1.7
25
3
150
Unit
A
A
V
μA
mA
nS
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
R
ΘJC
0.40
0.40
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
1
MUR30040CT thru MUR30060CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
3
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
GeneSiC Semiconductor
:
MUR30040CT MUR30040CTR MUR30060CT MUR30060CTR
GD32 MCU
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