AUTOMOTIVE GRADE
AUIRFN8458
V
DSS
R
DS(on)
typ.
max
I
D
(@T
C (Bottom)
= 25°C
Features
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of
other applications.
Applications
12V Automotive Systems
Low Power Brushed Motor
Braking
40V
8.0m
10m
43A
DUAL PQFN 5X6 mm
G
Gate
D
Drain
S
Source
Base Part Number
AUIRFN8458
Package Type
Dual PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRFN8458TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
I
D
@ T
C (Bottom)
= 25°C
I
D
@ T
C (Bottom)
= 100°C
I
DM
P
D
@T
C
(Bottom)
= 25°C
V
GS
E
AS
E
AS
(Tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Max.
43
30
180
34
0.23
± 20
35
37
See Fig. 14, 15, 22a, 22b
-55 to + 175
Units
A
W
W/°C
V
mJ
A
°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
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© 2014 International Rectifier
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October 17, 2014
AUIRFN8458
Symbol
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Typ.
–––
–––
–––
–––
Units
V
mV/°C
m
V
S
µA
nA
Units
Max.
4.4
50
105
82
Units
Thermal Resistance
R
JC
(Bottom)
R
JC
(Top)
R
JA
R
JA
(<10s)
°C/W
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
V
(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
–––
37
–––
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
–––
8.0
10
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
2.2
–––
3.9
gfs
Forward Transconductance
56
–––
–––
R
G
Internal Gate Resistance
–––
1.9
–––
–––
–––
1.0
Drain-to-Source Leakage Current
I
DSS
–––
–––
150
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Q
g
Total Gate Charge
–––
22
33
Q
gs
Gate-to-Source Charge
–––
6.3
–––
Q
gd
Gate-to-Drain ("Miller") Charge
–––
7.6
–––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
––– 14.4 –––
t
d(on)
Turn-On Delay Time
–––
9.7
–––
t
r
Rise Time
–––
71
–––
t
d(off)
Turn-Off Delay Time
–––
11
–––
Fall Time
–––
19
–––
t
f
C
iss
Input Capacitance
––– 1060 –––
C
oss
Output Capacitance
–––
170
–––
C
rss
Reverse Transfer Capacitance
–––
100
–––
C
oss
eff. (ER) Effective Output Capacitance (Energy Related)
–––
210
–––
C
oss
eff. (TR) Effective Output Capacitance (Time Related)
–––
250
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max.
Continuous Source Current
–––
–––
43
I
S
(Body Diode)
Pulsed Source Current
–––
–––
180
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
–––
–––
1.3
dv/dt
Peak Diode Recovery
–––
8.2
–––
–––
18
–––
t
rr
Reverse Recovery Time
–––
19
–––
–––
9.6
–––
Q
rr
Reverse Recovery Charge
–––
11
–––
I
RRM
Reverse Recovery Current
––– 0.89 –––
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 26A
V
DS
= V
GS
, I
D
= 25µA
V
DS
= 10V, I
D
= 26A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Conditions
I
D
= 26A
V
DS
= 20V
nC
V
GS
= 10V
I
D
= 26A, V
DS
=0V, V
GS
= 10V
V
DD
= 26V
I
D
= 26A
ns
R
G
= 2.7
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
pF ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
Units
Conditions
MOSFET symbol
A
showing the
integral reverse
A
p-n junction diode.
V T
J
= 25°C, I
S
= 26A, V
GS
= 0V
V/ns T
J
= 175°C, I
S
= 26A, V
DS
= 40V
T
J
= 25°C
ns
V
R
= 34V,
T
J
= 125°C
I
F
= 26A
T
J
= 25°C
nC
di/dt = 100A/µs
T
J
= 125°C
A T
J
= 25°C
D
G
S
2
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October 17, 2014
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.15V
4.8V
AUIRFN8458
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.15V
4.8V
100
BOTTOM
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
4.8V
1
4.8V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
1
0.1
1
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
1000
Fig. 2
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 43A
VGS = 10V
100
T J = 175°C
10
T J = 25°C
VDS = 10V
60µs
PULSE WIDTH
1.0
3
4
5
6
7
8
9
10
11
12
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
14.0
ID= 26A
V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
V DS= 32V
V DS= 20V
V DS= 8.0V
10000
C, Capacitance (pF)
1000
Ciss
Coss
Crss
100
10
1
10
V DS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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October 17, 2014
1000
100
AUIRFN8458
100µsec
1msec
ISD, Reverse Drain Current (A)
100
T J = 175°C
ID, Drain-to-Source Current (A)
10
10
T J = 25°C
VGS = 0V
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-to-Drain Voltage (V)
OPERATION
IN THIS
AREA
LIMITED BY
RDS(on)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10msec
DC
10
VDS, Drain-to-Source Voltage (V)
50
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
50
Id = 1.0mA
48
40
ID, Drain Current (A)
30
46
20
44
10
42
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
40
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
RDS(on), Drain-to -Source On Resistance (
m)
Fig 10.
Drain-to-Source Breakdown Voltage
120
100
80
60
40
20
0
0
20
40
60
80
100 120 140 160
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
0.16
0.14
0.12
0.10
Energy (µJ)
0.08
0.06
0.04
0.02
0.00
-0.02
-5
0
5
10
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
ID, Drain Current (A)
Fig 11.
Typical C
OSS
Stored Energy
4
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Fig 12.
Typical On-Resistance vs. Drain Current
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October 17, 2014
10
Thermal Response ( Z thJC ) °C/W
AUIRFN8458
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 150°C and
Tstart =25°C (Single Pulse)
10
Avalanche Current (A)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs. Pulse Width
40
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 26A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
EAR , Avalanche Energy (mJ)
30
20
10
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
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October 17, 2014
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