US5U35
4V Drive Pch+SBD MOSFET
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Outline
TUMT5
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
-45V
1.4Ω
±0.7A
1.0W
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Inner circuit
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Features
1) The US5U35 combines Pch MOSFET with a
Schottky barrier diode in a single TUMT5
package.
2) High-speed switching, Low On-resistance.
3) Built-in Low V
F
schottky barrier diode.
4) Pb-free lead plating ; RoHS compliant.
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Packaging specifications
Packing
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
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Application
Type
switching
Embossed
Tape
180
8
3000
TR
U35
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Absolute maximum ratings
(T
a
= 25°C)
<MOSFET>
Parameter
Drain - Source voltage
Gate - Source voltage
Continuous drain current
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation
Junction temperature
Symbol
V
DSS
V
GSS
I
D
I
D, pulse*1
I
S
I
S
, pulse*1
P
D*3
T
j
Value
-45
±20
±0.7
±2.8
-0.4
-2.8
0.7
150
Unit
V
V
A
A
A
A
W/element
℃
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© 2014 ROHM Co., Ltd. All rights reserved.
1/10
20130609 - Rev.001
US5U35
Datasheet
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Absolute maximum ratings
(T
a
= 25°C)
<SBD>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Power dissipation
Junction temperature
Symbol
V
RM
V
R
I
F
I
FSM*2
P
D*3
T
j
Value
45
40
100
1.0
0.5
150
Unit
V
V
mA
A
W/element
℃
<MOSFET + SBD>
Parameter
Power dissipation
Range of storage temperature
Symbol
P
D*3
T
stg
Value
1.0
-55 to +150
Unit
W/total
℃
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Electrical characteristics (T
a
= 25°C)
<MOSFET>
Parameter
Gate - Source leakage current
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate threshold voltage
Static drain - source
on - state resistance
Transconductance
Symbol
I
GSS
Conditions
Min.
V
GS
= ±20V, V
DS
= 0V
-
-45
-
-1.0
-
-
-
0.6
Values
Typ.
-
-
-
-
0.6
0.9
1.0
-
Max.
±10
-
-1
-2.5
0.8
1.3
1.4
-
S
Ω
μA
V
μA
V
Unit
V
(BR)DSS
V
GS
= 0V, I
D
= -1mA
I
DSS
V
GS(th)
V
DS
= -45V, V
GS
= 0V
V
DS
= -10V, I
D
= -1mA
V
GS
= -10V, I
D
= -0.7A
R
DS(on)*4
V
GS
= -4.5V, I
D
= -0.7A
V
GS
= -4.0V, I
D
= -0.35A
g
fs*4
V
DS
= -10V, I
D
= -0.7A
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© 2014 ROHM Co., Ltd. All rights reserved.
2/10
20130609 - Rev.001
US5U35
Datasheet
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Electrical characteristics
(T
a
= 25°C)
<MOSFET>
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*4
t
r*4
t
d(off)*4
t
f*4
Conditions
Min.
V
GS
= 0V
V
DS
= -10V
f = 1MHz
V
DD
⋍
-25V, V
GS
= -10V
Unit
Typ.
120
14
11
6
5
17
6
Max.
-
-
-
-
-
ns
-
-
-
-
pF
-
-
-
-
-
I
D
= -0.35A
R
L
= 71Ω
R
G
= 10Ω
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Gate charge characteristics
(T
a
= 25°C)
<MOSFET>
Values
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
Q
g*4
Q
gs*4
Q
gd*4
V
DD
⋍
-25V, I
D
= -0.7A
V
GS
= -5V
Conditions
Min.
-
-
-
Typ.
1.7
0.8
0.5
Max.
-
-
-
nC
Unit
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Body diode electirical characteristics
(Source-Drain) (T
a
= 25°C)
<MOSFET>
Values
Parameter
Symbol
V
SD*4
Conditions
Min.
Typ.
-
Max.
-1.2
V
V
GS
= 0V, I
S
= -0.7A
-
Unit
Forward voltage
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© 2014 ROHM Co., Ltd. All rights reserved.
3/10
20130609 - Rev.001
US5U35
Datasheet
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Electrical characteristics
(T
a
= 25°C)
<SBD>
Parameter
Symbol
V
F
I
R
Conditions
Min.
I
F
= 100mA
V
R
= 10V
-
-
Values
Typ.
-
-
Max.
0.55
30
V
μA
Unit
Forward voltage
Reverse current
*1 Pw ≤ 10μs, Duty cycle ≤ 1%
*2 60Hz
・
1 cycle
*3 Mounted on a ceramic board
*4 Pulsed
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
4/10
20130609 - Rev.001
US5U35
Datasheet
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Electrical characteristic curves <MOSFET>
Fig.1 Typical Capacitance vs. Drain -
Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
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© 2014 ROHM Co., Ltd. All rights reserved.
5/10
20130609 - Rev.001
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