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NDS9948
January 2010
NDS9948
Dual 60V P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Features
•
–2.3 A, –60 V
R
DS(ON)
= 250 mΩ @ V
GS
= –10 V
R
DS(ON)
= 500 mΩ @ V
GS
= –4.5 V
•
Low gate charge (9nC typical)
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
Applications
•
•
•
Power management
Load switch
Battery protection
D2
D
D2
D
D
D1
D1
D
5
6
7
Q1
4
3
2
Q2
SO-8
Pin 1
SO-8
G2
S2
S
G1
S1
G
S
8
1
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–60
±20
(Note 1a)
Units
V
V
A
W
–2.3
–10
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1.0
0.9
–55 to +175
°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
78
135
40
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
NDS9948
2010
Fairchild Semiconductor Corporation
Device
NDS9948
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
NDS9948 Rev B1(W)
NDS9948
Electrical Characteristics
Symbol
W
DSS
I
AR
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Test Conditions
Single Pulse, V
DD
=–54 V
Min Typ
Max
15
–10
Units
mJ
A
Drain-Source Avalanche Ratings
(Note 2)
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
I
D
= –250
µA
V
GS
= 0 V,
I
D
= –250
µA,
Referenced to25°C
V
GS
= 0 V
V
DS
= –40 V,
V
DS
= –40 V,V
GS
= 0 V T
J
=–55°C
V
GS
= 20 V,
V
DS
= 0 V
V
GS
= –20 V
V
DS
= 0 V
–60
–52
–2
–25
100
–100
V
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
I
D
= –250
µA
V
DS
= V
GS
,
I
D
= –250
µA,
Referenced to25°C
V
GS
= –10 V,
I
D
= –2.3 A
V
GS
= –4.5 V, I
D
= –1.6 A
V
GS
= –10 V,I
D
= –2.3A, T
J
=125°C
V
GS
= –10 V,
V
DS
= –5 V
V
DS
= –10 V,
I
D
= –2.3 A
–1
–1.5
4
138
175
225
–3
V
mV/°C
250
500
433
mΩ
I
D(on)
g
FS
–10
5
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –30 V,
f = 1.0 MHz
V
GS
= 0 V,
394
53
23
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –30 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Ω
6
9
16
3
12
18
29
6
13
ns
ns
ns
ns
nC
nC
nC
V
DS
= –30 V,
V
GS
= –10 V
I
D
= –2.3 A,
9
1.4
1.7
NDS9948 Rev
B1(W)
NDS9948
Electrical Characteristics
(cont.)
T
Symbol
I
S
V
SD
t
rr
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max
–1.7
–1.2
Units
A
V
nS
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
I
S
= –1.7 A
(Note 2)
Drain–Source Diode Forward
V
GS
= 0 V,
Voltage
I
F
= –2.3A,
V
GS
= 0 V,
Reverse Recovery Time
dI
F
/dt = 100A/µs
–0.8
25
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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