NTMFS4C08N
Power MOSFET
30 V, 52 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
(BR)DSS
30 V
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Applications
•
CPU Power Delivery
•
DC−DC Converters
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s
(Note 1)
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain Current
Pulsed Source
Current (Body Diode)
Steady
State
T
A
= 25°C
T
A
= 80°C
T
A
= 25°C
T
A
= 25°C
T
A
= 80°C
T
A
= 25°C
T
A
= 25°C
T
A
= 80°C
T
A
= 25°C
T
C
= 25°C
T
C
=80°C
T
C
= 25°C
T
A
= 25°C, t
p
= 10
ms
T
A
= 25°C, t
p
= 10
ms
T
A
= 25°C
P
D
I
DM
I
SM
I
Dmax
T
J
,
T
STG
I
S
dV/d
t
E
AS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
16.4
12.3
2.51
25.3
19.0
6.0
9.0
6.8
0.76
52
39
25.5
144
560
80
−55 to
+150
23
7.0
42
W
A
A
A
°C
A
V/ns
mJ
W
A
W
A
W
A
Unit
V
V
A
R
DS(ON)
MAX
5.8 mW @ 10 V
I
D
MAX
52 A
8.5 mW @ 4.5 V
D (5−8)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAMS
D
S
SO−8 FLAT LEAD
S
CASE 488AA
S
STYLE 1
G
A
Y
W
ZZ
D
4C08N
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
1
ORDERING INFORMATION
Device
NTMFS4C08NT1G
NTMFS4C08NT3G
Package
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
GS
= 10 V, I
L
= 29 A
pk
,
L = 0.1 mH, R
GS
= 25
W)
(Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at T
J
= 25°C,
V
GS
= 10 V, I
L
= 21 Apk, E
AS
= 22 mJ.
©
Semiconductor Components Industries, LLC, 2015
1
November, 2015 − Rev. 6
Publication Order Number:
NTMFS4C08N/D
NTMFS4C08N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – (t
≤
10 s) (Note 4)
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
4.9
49.8
164.6
21.0
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
(transient)
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSSt
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
V
GS
= 0 V, I
D(aval)
= 8.4 A,
T
case
= 25°C, t
transient
= 100 ns
30
34
13.8
1.0
10
±100
V
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
±20
V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
1.3
4.9
2.1
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 18 A
I
D
= 30 A
4.6
6.8
42
0.3
1.0
5.8
8.5
mW
S
2.0
W
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
g
FS
R
G
V
DS
= 1.5 V, I
D
= 15 A
T
A
= 25°C
C
ISS
C
OSS
C
RSS
C
RSS
/C
ISS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
1113
702
39
0.035
8.4
1.8
3.5
3.3
3.4
18.2
1670
pF
nC
V
nC
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
9.0
33
15
4.0
ns
6. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4C08N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
0.79
0.66
28.3
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
14.5
13.8
15.3
nC
ns
1.1
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
7.0
26
19
3.0
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
6. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4C08N
TYPICAL CHARACTERISTICS
100
90
I
D
, DRAIN CURRENT (A)
80
70
60
50
40
30
20
10
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
3.4 V
3.2 V
3.0 V
2.8 V
3.0
80
4.2 V
I
D
, DRAIN CURRENT (A)
4.0 V
3.8 V
3.6 V
70
60
50
40
30
T
J
= 125°C
20
T
J
= 25°C
10
0
0
0.5
1.0
1.5
2.0
2.5
T
J
= −55°C
3.0
3.5
4.0
4.5 5.0
V
DS
= 3 V
4.5 V to 10 V
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
= 30 A
0.010
0.009
0.008
0.007
0.006
0.005
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
0.004
0.003
0.002
10
20
30
40
50
60
70
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.7
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
10
−25
0
25
50
75
100
125
150
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
T
J
= 85°C
100
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTMFS4C08N
TYPICAL CHARACTERISTICS
10
Q
T
8
1600
C, CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
0
5
10
C
rss
15
20
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1800
6
Q
gs
4
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
0
2
4
6
8
10
12
14
16
18
20
Q
gd
2
0
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
100
t
r
t
f
t
d(off)
10
t
d(on)
20
18
16
14
12
10
8
6
4
2
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 125°C
T
J
= 25°C
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
22
20
18
16
14
12
10
8
6
4
2
0
Figure 10. Diode Forward Voltage vs. Current
I
D
= 21 A
I
D
, DRAIN CURRENT (A)
100
10
ms
100
ms
1 ms
10 ms
10
0 V < V
GS
< 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.01
0.1
1
10
1
0.1
0.01
dc
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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