2N6788U and 2N6790U
Qualified Levels:
JAN, JANTX, and
JANTXV
Compliant
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/555
DESCRIPTION
These 2N6788U and 2N6790U devices are military qualified up to a JANTXV level for high-
reliability applications. Microsemi also offers numerous other products to meet higher and
lower power voltage regulation applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
Surface mount equivalent of JEDEC registered 2N6788 and 2N6790 numbers.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/555.
RoHS compliant by design.
U-18 LCC
Package
APPLICATIONS / BENEFITS
•
•
•
High frequency operation.
Lightweight, low-profile package.
ESD rated to class 1A.
Also available in:
TO-205AF Package
(leaded)
2N6788 & 2N6790
MAXIMUM RATINGS
@ T
C
= +25 °C unless otherwise noted
Parameters / Test Conditions
Junction & Storage Temperature
Thermal Resistance Junction-to-Case (see
Figure 1)
(1)
Total Power Dissipation
Drain to Gate Voltage
Drain – Source Voltage
Gate – Source Voltage
(2)
Drain Current, dc @ T
C
= +25 °C
(see Figure ?)
Drain Current, dc @ T
C
= +100 °C
Off-State Current
Source Current
(3)
Symbol
T
J
, T
stg
R
ӨJC
P
T
V
DG
V
DS
V
GS
2N6788U
2N6790U
2N6788U
2N6790U
2N6788U
2N6790U
2N6788U
2N6790U
I
D1
I
D2
I
DM
I
S
Value
-55 to +150
8.93
0.8
100
200
100
200
± 20
4.5
2.8
2.8
1.8
18
11
4.5
2.8
Unit
°C
ºC/W
W
V
V
V
A
A
A (pk)
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
2N6788U
2N6790U
2N6788U
2N6790U
Notes:
1. Derated linearly by 0.11 W/°C for T
C
> +25 °C.
2. The following formula derives the maximum theoretical I
D
limit. I
D
is also limited by package and internal
wires and may be limited due to pin diameter.
3. I
DM
= 4 x I
D1
; I
D1
as calculated in note 2.
T4-LDS-0164-1, Rev. 1 (121482)
©2012 Microsemi Corporation
Page 1 of 8
2N6788U and 2N6790U
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Ceramic LCC-18 with kovar gold plated lid.
TERMINALS: Gold plating over nickel.
MARKING: Manufacturer's ID, part number, date code, ESD symbol at pin 1 location.
TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN=JAN level
JANTX=JANTX level
JANTXV=JANTXV level
Blank = Commercial
JEDEC type number
2N6790
U
Surface Mount package
Symbol
I
D
I
F
T
C
V
DD
V
DS
V
GS
Drain current.
Forward current.
Case temperature.
Drain supply voltage.
Drain to source voltage.
Gate to source voltage.
SYMBOLS & DEFINITIONS
Definition
T4-LDS-0164-1, Rev. 1 (121482)
©2012 Microsemi Corporation
Page 2 of 8
2N6788U and 2N6790U
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1 mA
Gate-Source Voltage (Threshold)
V
DS
≥ V
GS
, I
D
= 0.25 mA
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
j
= +125 °C
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
j
= -55 °C
Gate Current
V
GS
= ±20 V, V
DS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V, T
j
= +125 °C
2N6788U
2N6790U
V
(BR)DSS
V
GS(th)1
V
GS(th)2
V
GS(th)3
I
GSS1
I
GSS2
100
200
2.0
1.0
4.0
5.0
±100
±200
nA
V
Symbol
Min.
Max.
Unit
V
Parameters / Test Conditions
ON CHARACTERISTICS
Drain Current
V
GS
= 0V, V
DS
= 80 V
V
GS
= 0V, V
DS
= 160 V
Drain Current
V
GS
= 0V, V
DS
= 80 V, T
j
= +125 °C
V
GS
= 0V, V
DS
= 160 V, T
j
= +125 °C
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 3.5 A pulsed
V
GS
= 10 V, I
D
= 2.25 A pulsed
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 6.0 A pulsed
V
GS
= 10 V, I
D
= 3.5 A pulsed
Static Drain-Source On-State Resistance
T
j
= +125 °C:
V
GS
= 10 V, I
D
= 3.5 A pulsed
V
GS
= 10 V, I
D
= 2.25 A pulsed
Diode Forward Voltage
V
GS
= 0 V, I
D
= 6.0 A pulsed
V
GS
= 0 V, I
D
= 3.5 A pulsed
2N6788U
2N6790U
2N6788U
2N6790U
2N6788U
2N6790U
2N6788U
2N6790U
Symbol
Min.
Max.
Unit
I
DSS1
25
µA
I
DSS2
0.25
mA
r
DS(on)1
0.30
0.80
0.35
0.85
Ω
r
DS(on)2
Ω
2N6788U
2N6790U
2N6788U
2N6790U
r
DS(on)3
0.54
1.50
1.8
1.5
Ω
V
SD
V
T4-LDS-0164-1, Rev. 1 (121482)
©2012 Microsemi Corporation
Page 3 of 8
2N6788U and 2N6790U
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
V
GS
= 10 V, I
D
= 6.0 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 3.5 A, V
DS
= 100 V
Gate to Source Charge
V
GS
= 10 V, I
D
= 6.0 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 3.5 A, V
DS
= 100 V
Gate to Drain Charge
V
GS
= 10 V, I
D
= 6.0 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 3.5 A, V
DS
= 100 V
Symbol
Min.
Max.
Unit
2N6788U
2N6790U
2N6788U
2N6790U
2N6788U
2N6790U
Q
g(on)
18.0
14.3
4.0
3.0
9.0
9.0
nC
Q
gs
nC
Q
gd
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
I
D
= 6.0 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 35 V
I
D
= 3.5 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 74 V
Rinse time
I
D
= 6.0 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 35 V
I
D
= 3.5 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 74 V
Turn-off delay time
I
D
= 6.0 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 35 V
I
D
= 3.5 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 74 V
Fall time
I
D
= 6.0 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 35 V
I
D
= 3.5 A, V
GS
= 10 V, R
G
= 7.5
Ω,
V
DD
= 74 V
Diode Reverse Recovery Time
di/dt = 100 A/µs, V
DD
≤ 50 V, I
F
= 6.0 A
di/dt = 100 A/µs, V
DD
≤ 50 V, I
F
= 3.5 A
2N6788U
2N6790U
2N6788U
2N6790U
2N6788U
2N6790U
2N6788U
2N6790U
2N6788U
2N6790U
Symbol
t
d(on)
Min.
Max.
40
70
50
40
50
70
50
240
400
Unit
ns
t
r
ns
t
d(off)
ns
t
f
ns
t
rr
ns
T4-LDS-0164-1, Rev. 1 (121482)
©2012 Microsemi Corporation
Page 4 of 8
2N6788U and 2N6790U
GRAPHS
THERMAL RESPONSE (Z
ӨJC
)
t
1
, RECTANGULAR PULSE DURATION (SECONDS)
Figure 1
Thermal Impedance Curves
I
D
DRAIN CURRENT (AMPERES)
T
C
CASE TEMPERATURE (°C)
(2N6788U)
I
D
DRAIN CURRENT (AMPERES)
T
C
CASE TEMPERATURE (°C)
(2N6790U)
Figure 2
Maximum Drain Current vs. Case Temperature Graph
T4-LDS-0164-1, Rev. 1 (121482)
©2012 Microsemi Corporation
Page 5 of 8
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