4. Switching characteristics are independent of operating junction temperatures.
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2
NTR4501N, NVR4501N
7.0
I
D
, DRAIN CURRENT (AMPS)
6.0
5.0
4.0
3.0
2.0
1.0
0
0
1
2
3
4
5
V
GS
= 1.4 V
V
GS
= 1.2 V
0
6
7
8
9
10
0.5
1.0
1.5
2.0
2.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 1.6 V
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 10 V
V
GS
= 2.2 V
V
GS
= 3.0 V
V
GS
= 2.0 V T = 25°C
J
8
7
6
5
4
3
2
T
J
= 125°C
1
T
J
= −55°C
T
J
= 25°C
V
DS
≥
10 V
V
GS
= 1.8 V
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.25
I
D
= 3.2 A
T
J
= 25°C
0.20
0.10
T
J
= 25°C
0.09
V
GS
= 2.5 V
0.08
V
GS
= 4.5 V
0.07
0.15
0.10
0.06
0.05
0.05
2
3
4
5
6
I
D
, DRAIN CURRENT (AMPS)
1
2
3
4
5
6
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
1.4
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
D
= 3.2 A
V
GS
= 4.5 V
I
DSS
, LEAKAGE (nA)
1.2
100
1000
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1.0
10
T
J
= 100°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150
1.0
2
4
6
8
10
12
14
16
18
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage
Current versus Voltage
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3
NTR4501N, NVR4501N
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
350
300
C, CAPACITANCE (pF)
250
200
150
100
50
C
rss
0
0
2.5
5
7.5
10
12.5
15
17.5
20
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
5.0
Q
T
4.0
V
DS
3.0
V
GS
9
15
12
2.0
Q
GS
Q
GD
6
1.0
T
J
= 25°C
I
D
= 3.2 A
0
0
0.5
1.0
1.5
2.0
2.5
Q
G
, TOTAL GATE CHARGE (nC)
3
0
3.0
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and Drain−to−Source
Voltage versus Total Charge
100
I
S
, SOURCE CURRENT (AMPS)
V
DS
= 10 V
I
D
= 3.2 A
V
GS
= 4.5 V
t, TIME (ns)
10
t
d(on)
t
f
1
4
V
GS
= 0 V
T
J
= 25°C
3
t
d(off)
t
r
2
1
0.1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
1000
TRANSIENT THERMAL RESISTANCE,
R
qJA
(°C/W)
D = 0.5
0.2
0.1
0.05
0.02
0.01
100
10
1
0.1
0.000001
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME, tp (s)
Figure 11. Thermal Response
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4
NTR4501N, NVR4501N
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
E
1
2
HE
L
3X
b
T
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
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