Operating Temperature Range ......................... -40°C to +125°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 1)
QSOP
Junction-to-Ambient Thermal Resistance (θ
JA
) .....+103.7°C/W
Junction-to-Case Thermal Resistance (θ
JC
)...............+37°C/W
QSOP-EP
Junction-to-Ambient Thermal Resistance (θ
JA
) ..........+44°C/W
Junction-to-Case Thermal Resistance (θ
JC
).................+6°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(V
IN
= 24V, V
EN
= 5V, V
GND
= V
PGND
= 0V, C
IN
= 1µF, C
VCC
= 4.7µF, R
RT
= 49.9kΩ, T
A
= T
J
= -40°C to +125°C, unless otherwise
noted. Typical values are at T
A
= +25°C.) (Note 2)
PARAMETER
SYSTEM SPECIFICATIONS
Input-Voltage Range
Quiescent Supply Current
Shutdown Supply Current
V
CC
REGULATOR
Output Voltage
V
CC
Regulator Dropout
V
CC
Short-Circuit Output Current
V
CC
Undervoltage Lockout
V
CC
Undervoltage Lockout
Hysteresis
ERROR AMPLIFIER (FB, COMP)
FB Input-Voltage Set Point
FB Input Bias Current
FB to COMP Transconductance
Open-Loop Gain
Unity-Gain Bandwidth
Capacitor from COMP to GND = 47pF
V
FB
I
FB
g
M
V
FB
= 0.6V
I
COMP
=
±20µA
584
-250
600
1200
80
5
590
596
+250
1800
mV
nA
µS
dB
MHz
V
CCUVLO
V
CC
6V
≤ V
IN
≤ 40V, I
LOAD
= 6mA
V
IN
= 4.5V, I
LOAD
= 25mA
V
IN
= 5V
V
CC
rising
30
3.8
5
5.25
0.18
55
4
400
5.5
0.45
90
4.2
V
V
mA
V
mV
V
IN
I
IN_Q
I
IN_SBY
4.5
V
IN
= V
CC
= V
DRV
V
IN
= 24V, V
FB
= 0.9V, no switching
V
IN
= 24V, V
EN
= 0V, I
VCC
= 0, PGOOD
= unconnected
4.5
2
0.35
40
5.5
3
0.55
V
mA
mA
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
www.maximintegrated.com
Maxim Integrated
│
2
MAX15046
40V, High-Performance, Synchronous
Buck Controller
Electrical Characteristics (continued)
(V
IN
= 24V, V
EN
= 5V, V
GND
= V
PGND
= 0V, C
IN
= 1µF, C
VCC
= 4.7µF, R
RT
= 49.9kΩ, T
A
= T
J
= -40°C to +125°C, unless otherwise
noted. Typical values are at T
A
= +25°C.) (Note 2)
PARAMETER
V
COMP-RAMP
Minimum Voltage
COMP Source/Sink Current
ENABLE (EN)
EN Input High
EN Input Low
EN Input Leakage Current
OSCILLATOR
Switching Frequency (100kHz)
Switching Frequency (300kHz)
Switching Frequency (1MHz)
Switching Frequency Adjustment
Range
RT Voltage
PWM MODULATOR
PWM Ramp Peak-to-Peak
Amplitude
PWM Ramp Valley
Minimum Controllable On-Time
Maximum Duty Cycle
Minimum Low-Side On-Time
OUTPUT DRIVERS/DRIVERS SUPPLY (V
DRV
)
Undervoltage Lockout
DRV Undervoltage Lockout
Hysteresis
Low, sinking 100mA, V
BST
- V
LX
= 5V
High, sourcing 100mA, V
BST
- V
LX
= 5V
Low, sinking 100mA,
V
DRV
= V
CC
= 5.25V
High, sourcing 100mA,
V
DRV
= V
CC
= 5.25V
C
LOAD
= 10nF
Sinking,
V
BST
- V
LX
= 5V
Sourcing,
V
BST
- V
LX
= 5V
V
DRV_UVLO
V
DRV
rising
4.0
4.2
400
1
1.5
1
1.5
3
A
2
3
4
Ω
3
4
4.4
V
mV
D
MAX
f
SW
= 300kHz
(R
RT
= 49.9kΩ)
f
SW
= 1MHz
(R
RT
= 14.3kΩ)
MAX15046A/B
MAX15046C
MAX15046A/B
MAX15046C
85
90
V
RAMP
V
VALLEY
MAX15046A/B
MAX15046C
1.5
1.5
0.75
70
87.5
93
110
90
125
V
V
ns
%
ns
V
RT
f
SW
f
SW
f
SW
R
RT
= 150kΩ
R
RT
= 49.9kΩ
R
RT
= 14.3kΩ
(Note 3)
R
RT
= 49.9kΩ
80
270
0.9
100
1.15
1.2
100
300
1
120
330
1.1
1000
1.25
kHz
kHz
MHz
kHz
V
V
EN_H
V
EN_L
I
EN
V
EN
rising
V
EN
falling
V
EN
= 5.5V
-1
1.14
1.20
1.05
+1
1.26
V
V
µA
I
COMP
V
COMP
= 1.4V
50
SYMBOL
CONDITIONS
MIN
TYP
200
80
110
MAX
UNITS
mV
µA
DH On-Resistance
DL On-Resistance
DH Peak Current
www.maximintegrated.com
Maxim Integrated
│
3
MAX15046
40V, High-Performance, Synchronous
Buck Controller
Electrical Characteristics (continued)
(V
IN
= 24V, V
EN
= 5V, V
GND
= V
PGND
= 0V, C
IN
= 1µF, C
VCC
= 4.7µF, R
RT
= 49.9kΩ, T
A
= T
J
= -40°C to +125°C, unless otherwise
noted. Typical values are at T
A
= +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
Sinking,
V
DRV
= V
CC
= 5.25V
Sourcing,
V
DRV
= V
CC
= 5.25V
MIN
TYP
3
A
2
10
20
ns
MAX
UNITS
DL Peak Current
C
LOAD
= 10nF
MAX15046A/B
MAX15046C
DH, DL Break-Before-Make Time
(Dead Time)
SOFT-START
Soft-Start Duration
Reference Voltage Steps
CURRENT LIMIT/HICCUP
Cycle-by-Cycle Valley Current-
Limit Threshold Adjustment
Range
LIM Reference Current
LIM Reference Current
Temperature Coefficient
CSP Input Bias Current
Number of Consecutive Current-
Limit Events to Hiccup
Hiccup Timeout
Peak Low-Side Sink Current-
Limit Threshold
POWER-GOOD (PGOOD)
PGOOD Threshold
PGOOD Threshold Hysteresis
PGOOD Output Low Voltage
PGOOD Output Leakage Current
THERMAL SHUTDOWN
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
V
PGOOD_L
I
LEAK_PGOOD
I
LIM
2048
64
V
CSP
- V
PGND
,
valley limit =
V
LIM
/10
V
LIM
= 0.3V
V
LIM
= 3V
45
30
300
50
2300
V
CSP
= 40V
-1
7
4096
V
CSP
- V
PGND
, sink limit = V
LIM
/20,
R
ILIM
= 30kΩ, V
LIM
= 1.5V,
T
A
= +25°C
V
FB
rising
V
FB
falling
I
PGOOD
= 2mA, V
EN
= 0V
V
PGOOD
= 40V, V
EN
= 5V, V
FB
= 1V
Temperature rising
-1
+150
20
90
75
+1
55
Switching
Cycles
Steps
mV
µA
ppm/°C
µA
Events
Switching
Cycles
mV
V
LIM
= 0.3V to 3V, T
A
= +25°C
94
2.65
97.5
0.4
+1
%V
FB
%V
FB
V
µA
°C
°C
Note 2:
All devices are 100% tested at room temperature and guaranteed by design over the specified temperature range.
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