Si3446DV
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
FEATURES
I
D
(A)
5.3
4.4
r
DS(on)
(W)
0.045 @ V
GS
= 4.5 V
0.065 @ V
GS
= 2.5 V
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
COMPLIANT
RoHS
TSOP-6
Top View
1
6
(1, 2, 5, 6) D
3 mm
2
5
(3) G
3
4
2.85 mm
(4) S
Ordering Information: Si3446DV-T1
Si3446DV-T1–E3 (Lead (Pb)–free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
4.2
20
1.7
2.0
1.3
–55 to 150
W
_C
A
Symbol
V
DS
V
GS
Limit
20
"12
5.3
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70715
S-51451—Rev. C, 01-Aug-05
www.vishay.com
Symbol
R
thJA
Limit
62.5
Unit
_C/W
1
Si3446DV
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= 5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 5.3 A
V
GS
= 2.5 V, I
D
= 4.4 A
V
DS
= 10 V, I
D
= 5.3 A
I
S
= 1.7 A, V
GS
= 0 V
10
0.032
0.045
20
1.2
0.045
0.065
W
S
V
0.6
1.6
"100
1
5
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.7 A, di/dt = 100 A/ms
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
0.5
30
50
65
35
60
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5.3 A
10
2.5
2.2
3.0
50
80
100
60
90
ns
W
20
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70715
S-51451—Rev. C, 01-Aug-05
Si3446DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 5, 4.5, 4, 3.5, 3 V
16
2.5 V
I D – Drain Current (A)
12
I D – Drain Current (A)
12
16
20
Transfer Characteristics
8
2V
4
1, 1.5 V
0
0
1
2
3
4
8
4
T
C
= 125_C
25_C
–55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.10
1500
Capacitance
r DS(on)– On-Resistance (
W
)
0.08
C – Capacitance (pF)
1200
C
iss
900
0.06
V
GS
= 2.5 V
0.04
V
GS
= 4.5 V
600
C
oss
300
C
rss
0.02
0.00
0
4
8
12
16
20
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
DS
= 10 V
I
D
= 5.3 A
V GS – Gate-to-Source Voltage (V)
4
r
DS(on)
– On–Resistance
1.4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 5.3 A
2
(Normalized)
3
1.2
1.0
1
0.8
0
0
2
4
6
8
10
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70715
S-51451—Rev. C, 01-Aug-05
www.vishay.com
3
Si3446DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
0.10
I
D
= 5.3 A
10
I S – Source Current (A)
r DS(on)– On-Resistance (
W
)
0.08
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
T
J
= 25_C
0.06
0.04
0.02
1
0.00
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
25
Single Pulse Power
0.2
V GS(th) Variance (V)
I
D
= 250
mA
20
–0.2
Power (W)
–0.0
15
10
–0.4
5
–0.6
–50
–25
0
25
50
75
100
125
150
0
0.01
0.10
Time (sec)
1.00
10.00
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
S
10
–1
(
)
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 62.5_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
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Document Number: 70715
S-51451—Rev. C, 01-Aug-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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