Datasheet> 器件分类 > 半导体> 分立半导体> CMLD2004S-LEADFREE

CMLD2004S-LEADFREE: 产品描述Diodes - General Purpose, Power, Switching Dual Isolated Opp High Voltage; 产品类别半导体分立半导体; 文件大小369KB，共2页; 制造商Central Semiconductor

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CMLD2004S-LEADFREE概述

Diodes - General Purpose, Power, Switching Dual Isolated Opp High Voltage

CMLD2004S-LEADFREE规格参数

参数名称	属性值
产品种类 Product Category	Diodes - General Purpose, Power, Switching
制造商 Manufacturer	Central Semiconductor
RoHS	Details
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	SOT-563-6
Peak Reverse Voltage	300 V
Max Surge Current	4 A
If - Forward Current	225 mA
Configuration	Dual Series
Recovery Time	50 ns
Vf - Forward Voltage	1 V
Ir - Reverse Current	0.1 uA
最小工作温度 Minimum Operating Temperature	- 65 C
最大工作温度 Maximum Operating Temperature	+ 150 C
系列 Packaging	Box
高度 Height	0.6 mm (Max)
长度 Length	1.7 mm (Max)
工厂包装数量 Factory Pack Quantity	3000
类型 Type	Switching Diode
宽度 Width	1.2 mm
单位重量 Unit Weight	0.000106 oz

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CMLD2004

CMLD2004A

CMLD2004C CMLD2004S

CMLD2004DO

SURFACE MOUNT SILICON

DUAL, HIGH VOLTAGE

SWITCHING DIODES

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLD2004 series

contains two (2) silicon high voltage switching diodes,

manufactured by the epitaxial planar process, epoxy

molded in an SOT-563 surface mount package,

designed for applications requiring high voltage

capability.

SOT-563 CASE

The following configurations are available:

CMLD2004

CMLD2004A

CMLD2004C

CMLD2004S

CMLD2004DO

DUAL,

ISOLATED

COMMON ANODE

COMMON CATHODE

IN SERIES

ISOLATED OPPOSING

MARKING

CODE:

04D

04A or 4A

04C

04S

04O

UNITS

°C

°C/W

MAXIMUM RATINGS:

(TA=25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Peak Repetitive Reverse Current

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VRRM

IFRM

IFSM

TJ, Tstg

240

300

200

225

625

4.0

1.0

250

-65 to +150

500

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

BVR

trr

VR=240V

VR=240V, TA=150°C

IR=100μA

IF=100mA

VR=0, f=1.0MHz

IF=IR=30mA, Irr=3.0mA, RL=100Ω

100

300

1.0

5.0

UNITS

μA

R6 (12-September 2014)

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