TSM4539D
Complementary Enhancement MOSFET
SOP-8
Pin Definition:
1. Source 1
8. Drain 1
2. Gate 1
7. Drain 1
3. Source 2
6. Drain 2
4. Gate 2
5. Drain 2
MOSFET PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
N-Channel
P-Channel
30
28 @ V
GS
= 10V
42 @ V
GS
= 4.5V
65 @ V
GS
= -10V
90 @ V
GS
= -4.5V
I
D
(A)
6.5
5.0
-4.2
-3.5
-30
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
Package
Packing
TSM4539DCS RLG
SOP-8
2.5Kpcs / 13” Reel
Note:
“G” denote for Halogen Free Product
mm
e
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
nd
e
N-Channel
P-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current,
Continuous Drain Current, V
GS
eco
MOSFET Absolute Maximum Rating
(T
A
=25
o
C unless otherwise noted)
N-CH Limit
30
±20
6.5
28
2.5
2.1
150
-55 ~ +150
d
P-CH Limit
-30
±20
-4.2
-20
-1.9
2.1
Unit
V
V
A
A
A
W
o
o
Drain-Source Diode Forward Current
Power Dissipation @ Ta = 25 C
o
Operating Junction Temperature
Operating Junction and Storage Temperature Range
No
tR
T
J
T
J
, T
STG
C
C
Thermal Performance
Parameter
Junction to Ambient Thermal Resistance
Junction to Lead Thermal Resistance
Symbol
RӨ
JA
RӨ
JL
N-CH Limit
62.5
40
P-CH Limit
62.5
40
Unit
o
o
C/W
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board using 1 inch sq pad size, t
≤
5sec.
c. Surge Applied at Rated Load Conditions, Half-Wave, Single Phase, 60Hz.
1/4
Version: A12
TSM4539D
Complementary Enhancement MOSFET
Electrical Specifications
(T
A
=25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
V
GS
=0V, I
D
= 250uA
V
GS
=0V, I
D
=-250uA
V
DS
=V
GS
, I
D
= 250µA
V
DS
=V
GS
, I
D
=-250µA
V
GS
= ±20V, V
DS
=0V
V
GS
= ±20V, V
DS
=0V
V
DS
=24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=10V, I
D
=6.5A
V
GS
=-10V, I
D
=-4.2A
V
GS
=4.5V, I
D
=5A
V
GS
=-4.5V, I
D
=-3.5A
N-Channel
V
DS
=10V, I
D
=1A,
V
GS
=10V
BV
DSS
V
GS(TH)
I
GSS
I
DSS
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
30
-30
1.0
-1.0
--
--
--
--
--
--
--
--
--
1.4
-1.5
--
--
--
--
23
50
35
82
7
9.7
1.6
1.6
1.0
1.3
610
100
77
551
90
60
7
6.2
10
6.2
16
26
7
5.5
--
--
--
--
3.0
-3.0
±100
±10
1
-1
28
65
42
90
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
1.0
-1.3
V
V
nA
µA
Conditions
Symbol
Min
Typ
Max
Unit
Dynamic
b
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
mm
e
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
2/4
Total Gate Charge
nd
e
Q
g
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
d
Drain-Source On-State
a
Resistance
R
DS(ON)
mΩ
eco
P-Channel
V
DS
=-15V, I
D
=-5.2A,
V
GS
=-10V
nC
Reverse Transfer Capacitance
Switching
b
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
No
tR
N-Channel
V
DS
=15V, V
GS
= 0V,
f = 1.0MHz
pF
P-Channel
V
DS
=-15V, V
GS
= 0V,
f = 1.0MHz
N-Channel
V
DD
=15V, I
D
= 1A,
V
GEN
=10V, R
G
= 6Ω
P-Channel
V
DD
=-15V, I
D
= -1A,
V
GEN
=-10V, R
G
= 6Ω
I
S
=1 A, V
GS
= 0V
I
S
=-1.9A, V
GS
= 0V
nS
Diode Forward Voltage
V
Notes:
a. Pulse test: PW
≤300µS,
duty cycle
≤2%
b. For DESIGN AID ONLY, not subject to production testing.
Version: A12
TSM4539D
Complementary Enhancement MOSFET
SOP-8 Mechanical Drawing
DIM
A
B
C
D
F
G
K
M
P
R
No
3/4
tR
eco
mm
e
Version: A12
nd
e
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
4.80
5.00
0.189
0.196
3.80
4.00
0.150
0.157
1.35
1.75
0.054
0.068
0.35
0.49
0.014
0.019
0.40
1.25
0.016
0.049
1.27BSC
0.05BSC
0.10
0.25
0.004
0.009
0º
7º
0º
7º
5.80
6.20
0.229
0.244
0.25
0.50
0.010
0.019
d
TSM4539D
Complementary Enhancement MOSFET
No
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
tR
eco
mm
e
Version: A12
nd
e
d
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
