BYW52, BYW53, BYW54, BYW55, BYW56
www.vishay.com
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Controlled avalanche characteristics
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
• AEC-Q101 qualified
949539
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Rectification, general purpose
ORDERING INFORMATION
(Example)
DEVICE NAME
BYW56
BYW56
ORDERING CODE
BYW56-TR
BYW56-TAP
TAPED UNITS
5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY
25 000
25 000
PARTS TABLE
PART
BYW52
BYW53
BYW54
BYW55
BYW56
TYPE DIFFERENTIATION
V
R
= 200 V; I
F(AV)
= 2 A
V
R
= 400 V; I
F(AV)
= 2 A
V
R
= 600 V; I
F(AV)
= 2 A
V
R
= 800 V; I
F(AV)
= 2 A
V
R
= 1000 V; I
F(AV)
= 2 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYW52
BYW53
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYW54
BYW55
BYW56
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
i
2
t-rating
Junction and storage temperature range
= 180 °
t
p
= 20 μs half sine wave, T
j
= 175 °C
l
(BR)R
= 1 A, T
j
= 175 °C
t
p
= 10 ms, half sine wave
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
F(AV)
P
R
E
R
i
2
t
T
j
= T
stg
VALUE
200
400
600
800
1000
50
12
2
1000
20
8
-55 to +175
UNIT
V
V
V
V
V
A
A
A
W
mJ
A
2
s
°C
Rev. 1.9, 04-Nov-15
Document Number: 86049
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYW52, BYW53, BYW54, BYW55, BYW56
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
TEST CONDITION
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
R
= 100 μA, t
p
/T = 0.01, t
p
= 0.3 ms
V
R
= 4 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A, dI/dt = 5 A/μs, V
R
= 50 V
l
F
= 1 A, dI/dt = 5 A/μs
SYMBOL
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
Q
rr
MIN.
-
-
-
-
-
-
-
-
TYP.
0.9
0.1
5
-
18
-
-
-
MAX.
1
1
10
1600
-
4000
4000
200
UNIT
V
μA
μA
V
pF
ns
ns
nC
TYPICAL CHARACTERISTICS
(T
amb
= 25
C,
unless otherwise specified)
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
120
I
FAV
- Average Forward Current (A)
l
100
80
l
2.5
V
R
= V
RRM
half
sine
wave
2.0
T
L
= constant
60
40
20
0
0
949101
1.5
R
thJA
= 45 K/W
l = 10 mm
1.0
0.5
R
thJA
= 100 K/W
PCB: d = 25 mm
0.0
5
10
15
20
25
30
16351
0
20
40
60
80 100 120 140 160 180
l - Lead Length (mm)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs.
Ambient Temperature
10
T
j
= 175 °C
1000
V
R
= V
RRM
1
T
j
= 25 °C
0.1
I
R
- Reverse Current (μA)
1.6
I
F
- Forward Current (A)
100
10
0.01
0.001
0.0
16350
1
0.4
0.8
1.2
25
16352
50
75
100
125
150
175
V
F
- Forward Voltage (V)
T
j
- Junction Temperature (°C)
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 4 - Reverse Current vs. Junction Temperature
Rev. 1.9, 04-Nov-15
Document Number: 86049
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYW52, BYW53, BYW54, BYW55, BYW56
www.vishay.com
Vishay Semiconductors
P
R
- Reverse Power Dissipation (mW)
400
V
R
= V
RRM
40
300
P
R
- Limit at 100 % V
R
250
200
150
P
R
- Limit at 80 % V
R
100
50
0
25
50
75
100
125
150
175
C
D
- Diode Capacitance (pF)
350
35
30
25
20
15
10
5
0
0.1
1
10
f = 1 MHz
16353
100
T
j
- Junction Temperature (°C)
16354
V
R
- Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
V
RRM
= 1000 V, R
thJA
= 100 K/W
Z
thp
- Thermal Resistance
for Pulse Cond. (K/W)
100
t
p
/T = 0.5
t
p
/T = 0.2
10
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
1
t
p
/T = 0.01
10
-4
10
-3
10
-2
10
-1
10
0
10
1
T
amb
= 60 °C
T
amb
= 70 °C
T
amb
= 100 °C
1
10
100
T
amb
= 25 °C
T
amb
= 45 °C
10
-5
94 9178
t
p
- Pulse Length (s)
I
FRM
- Repetitive Peak
Forward Current (A)
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Rev. 1.9, 04-Nov-15
Document Number: 86049
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
3.6 (0.142) max.
20543
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www.vishay.com
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Revision: 08-Feb-17
1
Document Number: 91000