NTTFS4840N
Power MOSFET
Features
30 V, 26 A, Single N−Channel,
m8FL
•
•
•
•
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
DC−DC Converters
Point of Load
Power Load Switch
Notebook Battery Management
Motor Control
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s
(Note 1)
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain Current
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C, t
p
= 10
ms
P
D
I
DM
T
J
,
T
stg
I
S
dV/dt
E
AS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
7.3
5.3
2.2
10.3
7.5
4.4
4.6
3.3
0.84
26
19
27.8
77
−55
to
+150
23
6.0
16.7
W
A
°C
A
V/ns
mJ
W
A
W
A
4840
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
W
A
1
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V
(BR)DSS
30 V
R
DS(on)
MAX
24 mW @ 10 V
36 mW @ 4.5 V
I
D
MAX
26 A
Applications
N−Channel MOSFET
D (5−8)
Unit
V
V
A
S (1,2,3)
G (4)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
S
S
S
G
4840
AYWWG
G
D
D
D
D
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTTFS4840NTAG
NTTFS4840NTWG
Package
Shipping
†
WDFN8 1500/Tape & Reel
(Pb−Free)
WDFN8 5000/Tape & Reel
(Pb−Free)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 18.3 A
pk
, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
©
Semiconductor Components Industries, LLC, 2011
January, 2011
−
Rev. 1
1
Publication Order Number:
NTTFS4840N/D
NTTFS4840N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t
≤
10 s) (Note 3)
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
4.5
57.5
149.2
28.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
I
D
= 20 A
I
D
= 10 A
I
D
= 20 A
I
D
= 10 A
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
17
1.0
10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
5.6
15
15
28
25
22
3.0
V
mV/°C
V
GS
= 10 V to 11.5 V
V
GS
= 4.5 V
24
mW
36
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 1.5 V, I
D
= 20 A
S
580
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 15 V
140
80
5.5
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 20 A
0.75
2.2
2.8
V
GS
= 10 V, V
DS
= 15 V, I
D
= 20 A
10.8
pF
nC
nC
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
10.5
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
38.2
11.5
2.6
ns
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4840N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 20 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
6.3
19.4
15.8
1.7
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 20 A
0.96
0.87
12.5
7.7
4.8
4.4
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
0.66
0.20
1.5
2.0
3.0
nH
W
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTTFS4840N
TYPICAL CHARACTERISTICS
50
40
50
V
DS
≥
10 V
I
D
, DRAIN CURRENT (A)
40
30
20
10
0
1.0
T
J
= 25°C
10 V
7.5 V
T
J
= 25°C
V
GS
= 5 V
4.8 V
4.6 V
I
D
, DRAIN CURRENT (A)
30
20
4.4 V
4.2 V
4.0 V
3.8 V
10
0
3.6 V
3.4 V
3.3 V
3.0 V
3.5
4
T
J
= 125°C
T
J
=
−55°C
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.050
I
D
= 20 A
T
J
= 25°C
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
10
Figure 2. Transfer Characteristics
T
J
= 25°C
0.040
V
GS
= 4.5 V
0.030
0.020
V
GS
= 10 V
0.010
3
4
5
6
7
8
9
10
15
20
I
D
, DRAIN CURRENT (A)
25
30
V
GS
(V)
Figure 3. On−Resistance vs. V
GS
1.7
1.6
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
−25
0
25
50
75
100
125
150
10
I
D
= 20 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
100
T
J
= 125°C
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTTFS4840N
TYPICAL CHARACTERISTICS
1000
900
C, CAPACITANCE (pF)
800
700
600
500
400
300
200
100
0
0
5
C
rss
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 20 A
9
10
11
Qgs
Qgd
QT
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
100
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
t
d(off)
t
r
t
f
10
t
d(on)
20
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
15
10
5
V
GS
= 0 V
T
J
= 25°C
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.4
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
100
10
ms
100
ms
1 ms
1
V
GS
= 20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
1
10
10 ms
18
16
14
12
10
8
6
4
2
0
25
Figure 10. Diode Forward Voltage vs. Current
I
D
= 18.3 A
I
D
, DRAIN CURRENT (A)
10
0.1
dc
0.01
0.1
100
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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